Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 0, 11/2007 Heterostructure Field Effect Transistor (GaAs HFET) MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 to 4000 MHz such as Cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. 250 - 4000 MHz, 12 dB 22.5 dBm GaAs HFET Features • Frequency: 250 to 4000 MHz • P1dB: 22.5 dBm @ 900 MHz • Small - Signal Gain: 12 dB @ 900 MHz • Third Order Output Intercept Point: 44 dBm @ 900 MHz • Single 5 Volt Supply • Internally Prematched to 50 Ohms • Internally Biased • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. Table 1. Typical Performance (1) Characteristic Symbol Small - Signal Gain (S21) Gp 3 CASE 1514 - 02, STYLE 2 SOT - 89 PLASTIC Table 2. Maximum Ratings 900 MHz 2140 MHz 3500 MHz Unit 12 11.3 10 dB Input Return Loss (S11) IRL - 14 - 15 - 16 dB Output Return Loss (S22) ORL - 14 - 19 - 14 dB Power Output @1dB Compression P1db 22.5 22 22 dBm IP3 44 44 42 dBm Third Order Output Intercept Point 12 Rating Symbol Value Unit Supply Voltage (2) VDD 6 V Supply Current (2) IDD 300 mA RF Input Power Pin 10 dBm Storage Temperature Range Tstg - 65 to +150 °C Junction Temperature (3) TJ 150 °C 2. Continuous voltage and current applied to device. 3. For reliable operation, the junction temperature should not exceed 150°C. 1. VDD = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VDD = 5 Vdc, IDD = 150 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (4) Unit RθJC 37.5 °C/W 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MMH3111NT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small - Signal Gain (S21) Characteristic Gp 11 12 — dB Input Return Loss (S11) IRL — - 14 — dB Output Return Loss (S22) ORL — - 14 — dB Power Output @ 1dB Compression P1dB — 22.5 — dBm Third Order Output Intercept Point IP3 — 44 — dBm Noise Figure NF — 3.2 — dB Supply Current (1) IDD 120 150 190 mA Supply Voltage (1) VDD — 5 — V 1. For reliable operation, the junction temperature should not exceed 150°C. MMH3111NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 2 1 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22 - A114) 1A (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C MMH3111NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 0 S11 −10 15 −40°C S11, S22 (dB) Gp, SMALL−SIGNAL GAIN (dB) 20 25°C 10 TC = 85°C S22 −20 −30 VDD = 5 Vdc IDD = 150 mA VDD = 5 Vdc 5 0 1 2 3 −40 0 4 3 4 Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Loss versus Frequency 24 900 MHz 12 P1dB, 1 dB COMPRESSION POINT (dBm) VDD = 5 Vdc IDD = 150 mA 1960 MHz 2140 MHz 11 2600 MHz 10 3500 MHz 9 8 10 23 22 21 20 19 18 VDD = 5 Vdc IDD = 150 mA 17 16 12 14 16 18 20 22 0.5 24 1 1.5 2 2.5 3 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power Figure 5. P1dB versus Frequency 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Gp, SMALL−SIGNAL GAIN (dB) 2 f, FREQUENCY (GHz) 13 IDD, DRAIN CURRENT (mA) 1 f, FREQUENCY (GHz) 3.5 50 48 46 44 42 40 VDD = 5 Vdc, IDD = 150 mA, 10 dBm per Tone Two−Tone Measurements, 1 MHz Tone Spacing 38 36 0 1 2 3 VDD, DRAIN VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Drain Current versus Drain Voltage Figure 7. Third Order Output Intercept Point versus Frequency 4 MMH3111NT1 4 RF Device Data Freescale Semiconductor IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS 47 45 43 41 39 37 f = 900 MHz, 10 dBm per Tone Two−Tone Measurements, 1 MHz Tone Spacing 35 4 4.2 4.4 4.6 4.8 5 VDD, DRAIN VOLTAGE (V) 48 VDD = 5 Vdc, f = 900 MHz, 10 dBm per Tone Two−Tone Measurements, 1 MHz Tone Spacing 47 46 45 44 43 −40 −20 40 60 80 100 T, TEMPERATURE (_C) 106 −25 −35 −40 MTTF (YEARS) VDD = 5 Vdc IDD = 150 mA f = 900 MHz 1 MHz Tone Spacing −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 20 Figure 9. Third Order Output Intercept Point versus Case Temperature Figure 8. Third Order Output Intercept Point versus Drain Voltage −45 −50 105 −55 −60 −65 104 −70 10 12 16 14 125 130 135 140 150 145 TJ, JUNCTION TEMPERATURE (°C) Figure 10. Third Order Intermodulation versus Output Power Figure 11. MTTF versus Junction Temperature 4 2 VDD = 5 Vdc IDD = 150 mA 0 1 2 3 NOTE: The MTTF is calculated with VDD = 5 Vdc, IDD = 150 mA ACPR, ADJACENT CHANNEL POWER RATIO (dB) 6 0 120 18 Pout, OUTPUT POWER (dBm) 8 NF, NOISE FIGURE (dB) 0 4 −30 VDD = 5 Vdc, IDD = 150 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −40 −50 −60 −70 9 10 11 12 13 14 15 16 17 18 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power 19 MMH3111NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 800- 1900 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 Z3 C1 Z4 DUT Z5 Z6 Z8 C2 VCC C5 Z7 RF OUTPUT C6 L2 Z1 Z2 Z3 Z4 Z5 0.347″ 0.068″ 0.418″ 0.089″ 0.172″ x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip Z6 Z7 Z8 PCB 0.403″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip 0.261″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 S21 S21, S11, S22 (dB) 10 R1 0 C1 S11 −10 C4 C3 L1 C2 C6 −20 C5 S22 −30 VDD = 5 Vdc IDD = 150 mA −40 600 800 1000 L2 MMG30XX Rev 2 1200 1400 1600 1800 2000 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 pF Chip Capacitors 06035J470BBSTR AVX C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 1 μF Chip Capacitor C0603C105J5RAC Kemet C5 0.7 pF Chip Capacitor 06035J0R7BBSTR AVX C6 0.4 pF Chip Capacitor 12105J0R4BBTTR AVX L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden L2 12 nH Chip Inductor HK160812NJ - T Taiyo Yuden R1 0 W, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMH3111NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1900- 2200 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 C1 Z1 Z2 Z3 Z4 0.347″ 0.068″ 0.507″ 0.172″ DUT Z3 Z4 Z5 C2 VCC C5 x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip Z6 Z5 Z6 Z7 PCB RF OUTPUT Z7 C6 0.403″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip 0.261″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 S21 R1 S21, S11, S22 (dB) 10 0 C4 C3 C1 C2 L1 C6 −10 C5 S11 −20 VDD = 5 Vdc IDD = 150 mA S22 −30 1800 1900 2000 2100 2200 MMG30XX Rev 2 2300 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 pF Chip Capacitors 06035J470BBSTR AVX C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 1 μF Chip Capacitor C0603C105J5RAC Kemet C5 0.7 pF Chip Capacitor 06035J0R7BBSTR AVX C6 0.4 pF Chip Capacitor 12105J0R4BBTTR AVX L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden R1 0 W, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMH3111NT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 2500 - 3800 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 Z3 C1 Z1 Z2 Z3 Z4 0.347″ 0.489″ 0.086″ 0.097″ DUT Z4 VCC C5 x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip Z5 Z6 Z7 C2 C6 Z5 Z6 Z7 PCB RF OUTPUT 0.075″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip 0.347″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 20. 50 Ohm Test Circuit Schematic 20 S21 10 S21, S11, S22 (dB) R1 0 C4 C3 S11 −10 C1 L1 −20 C5 C2 C6 −30 S22 VDD = 5 Vdc IDD = 150 mA −40 −50 2400 2700 3000 3300 MMG30XX Rev 2 3600 3900 f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 2 pF Chip Capacitors 06035J2R0BBSTR AVX C3 0.1 μF Chip Capacitor C0603C104J5RAC Kemet C4 1 μF Chip Capacitor C0603C105J5RAC Kemet C5 0.8 pF Chip Capacitor 06035J0R8BBSTR AVX C6 0.4 pF Chip Capacitor 06035J0R4BBSTR AVX L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden R1 0 W, 1/10 W Chip Resistor CRCW06030000FKEA Vishay MMH3111NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Source S - Parameters (VDD = 5 Vdc, IDD = 150 mA, TC = 255C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.329 - 36.383 4.365 165.300 0.116 4.544 0.161 - 47.926 150 0.324 - 37.554 4.337 163.880 0.116 3.571 0.154 - 47.482 250 0.322 - 38.791 4.313 162.387 0.116 2.612 0.147 - 46.993 300 0.318 - 40.072 4.288 160.990 0.116 1.903 0.143 - 46.565 350 0.315 - 41.580 4.266 159.673 0.116 1.012 0.137 - 46.090 400 0.313 - 43.457 4.239 158.172 0.116 0.371 0.133 - 45.522 450 0.313 - 45.793 4.217 156.531 0.116 - 1.047 0.130 - 45.093 500 0.315 - 48.163 4.196 154.804 0.116 - 2.355 0.129 - 44.795 550 0.317 - 50.730 4.175 153.014 0.117 - 3.521 0.129 - 45.225 600 0.319 - 53.308 4.154 151.195 0.117 - 4.643 0.129 - 45.763 650 0.322 - 55.918 4.136 149.346 0.117 - 5.686 0.129 - 46.206 700 0.325 - 58.706 4.116 147.439 0.117 - 6.700 0.129 - 46.966 750 0.329 - 61.512 4.098 145.565 0.117 - 7.693 0.130 - 47.749 800 0.332 - 64.233 4.078 143.660 0.117 - 8.616 0.131 - 48.671 850 0.336 - 67.096 4.059 141.719 0.117 - 9.581 0.132 - 49.880 900 0.339 - 69.960 4.040 139.799 0.117 - 10.489 0.132 - 51.046 950 0.344 - 72.823 4.019 137.852 0.117 - 11.398 0.133 - 52.269 1000 0.347 - 75.724 4.001 135.896 0.117 - 12.312 0.133 - 53.492 1050 0.351 - 78.553 3.983 133.947 0.118 - 13.198 0.133 - 54.989 1100 0.355 - 81.424 3.964 131.996 0.118 - 14.093 0.132 - 56.508 1150 0.358 - 84.459 3.944 130.038 0.118 - 14.998 0.131 - 57.950 1200 0.362 - 87.372 3.924 128.069 0.118 - 15.903 0.131 - 59.716 1250 0.367 - 90.300 3.903 126.129 0.118 - 16.821 0.129 - 61.319 1300 0.371 - 93.201 3.883 124.163 0.118 - 17.713 0.128 - 63.068 1350 0.375 - 96.015 3.861 122.219 0.118 - 18.623 0.126 - 64.878 1400 0.380 - 98.765 3.837 120.287 0.118 - 19.497 0.124 - 66.432 1450 0.385 - 101.218 3.815 118.370 0.118 - 20.349 0.123 - 67.493 1500 0.391 - 103.291 3.793 116.530 0.118 - 21.202 0.123 - 68.218 1550 0.395 - 105.591 3.773 114.664 0.119 - 22.024 0.123 - 69.287 1600 0.398 - 108.116 3.752 112.769 0.119 - 22.896 0.122 - 70.746 1650 0.401 - 110.631 3.731 110.886 0.119 - 23.793 0.121 - 72.539 1700 0.404 - 113.324 3.710 108.972 0.119 - 24.719 0.120 - 74.765 1750 0.407 - 116.074 3.691 107.070 0.119 - 25.638 0.118 - 77.175 1800 0.410 - 118.856 3.672 105.143 0.119 - 26.594 0.117 - 79.613 1850 0.413 - 121.692 3.654 103.215 0.119 - 27.518 0.115 - 82.165 1900 0.416 - 124.469 3.633 101.291 0.119 - 28.483 0.113 - 84.722 1950 0.419 - 127.201 3.613 99.367 0.120 - 29.461 0.111 - 87.462 2000 0.422 - 130.044 3.592 97.431 0.120 - 30.414 0.110 - 90.359 2050 0.425 - 132.901 3.570 95.510 0.120 - 31.362 0.108 - 93.223 2100 0.428 - 135.666 3.547 93.588 0.120 - 32.353 0.106 - 96.005 2150 0.432 - 138.396 3.525 91.656 0.120 - 33.317 0.104 - 99.124 2160 0.433 - 138.893 3.519 91.287 0.120 - 33.518 0.104 - 99.644 2170 0.434 - 139.420 3.515 90.904 0.120 - 33.707 0.103 - 100.212 2180 0.434 - 139.934 3.509 90.532 0.120 - 33.908 0.103 - 100.854 2190 0.435 - 140.473 3.506 90.142 0.120 - 34.094 0.103 - 101.491 MMH3111NT1 RF Device Data Freescale Semiconductor 9 Table 11. Common Source S - Parameters (VDD = 5 Vdc, IDD = 150 mA, TC = 255C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2200 0.436 - 141.015 3.502 89.764 0.120 - 34.293 0.102 - 102.102 2250 0.440 - 143.664 3.480 87.853 0.120 - 35.279 0.100 - 105.319 2300 0.444 - 146.130 3.456 85.964 0.120 - 36.278 0.099 - 108.673 2350 0.448 - 148.573 3.433 84.098 0.120 - 37.227 0.097 - 111.868 2400 0.452 - 150.891 3.408 82.262 0.120 - 38.193 0.094 - 115.093 2450 0.457 - 153.231 3.384 80.399 0.120 - 39.165 0.093 - 118.343 2500 0.461 - 155.588 3.360 78.562 0.120 - 40.131 0.091 - 121.666 2550 0.465 - 157.929 3.337 76.708 0.120 - 41.119 0.090 - 125.028 2600 0.469 - 160.182 3.312 74.886 0.120 - 42.109 0.089 - 128.277 2650 0.473 - 162.557 3.290 73.042 0.120 - 43.087 0.088 - 131.582 2700 0.476 - 164.863 3.268 71.221 0.120 - 44.100 0.088 - 134.657 2750 0.480 - 167.206 3.246 69.393 0.120 - 45.119 0.087 - 137.722 2800 0.483 - 169.520 3.223 67.572 0.120 - 46.143 0.087 - 140.631 2850 0.487 - 171.820 3.201 65.747 0.120 - 47.132 0.086 - 143.444 2900 0.490 - 173.992 3.180 63.945 0.120 - 48.134 0.086 - 146.347 2950 0.494 - 176.195 3.157 62.155 0.120 - 49.132 0.085 - 149.433 3000 0.498 - 178.278 3.136 60.357 0.120 - 50.131 0.085 - 152.745 3050 0.501 179.789 3.114 58.599 0.120 - 51.092 0.085 - 156.274 3100 0.505 177.950 3.092 56.836 0.120 - 52.074 0.084 - 160.030 3150 0.508 176.155 3.071 55.112 0.120 - 53.076 0.085 - 163.912 3200 0.511 174.401 3.051 53.377 0.120 - 54.062 0.085 - 167.662 3250 0.514 172.667 3.031 51.656 0.120 - 55.020 0.085 - 171.336 3300 0.517 170.842 3.010 49.907 0.120 - 55.996 0.086 - 175.010 3350 0.519 169.000 2.990 48.184 0.120 - 56.970 0.087 - 178.505 3400 0.522 167.181 2.970 46.458 0.120 - 57.975 0.087 177.850 3450 0.524 165.308 2.950 44.716 0.120 - 59.010 0.089 174.447 3500 0.527 163.438 2.930 43.003 0.120 - 60.024 0.090 170.925 3550 0.528 161.590 2.911 41.291 0.120 - 61.051 0.093 167.846 3600 0.531 159.691 2.892 39.560 0.120 - 62.060 0.095 164.966 MMH3111NT1 10 RF Device Data Freescale Semiconductor 1.7 7.62 0.305 diameter 2.49 3.48 5.33 1.27 1.27 2.54 0.58 0.86 0.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 23. Recommended Mounting Configuration MMH3111NT1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MMH3111NT1 12 RF Device Data Freescale Semiconductor MMH3111NT1 RF Device Data Freescale Semiconductor 13 MMH3111NT1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 Description • Initial Release of Data Sheet MMH3111NT1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MMH3111NT1 Document Number: MMH3111NT1 Rev. 0, 11/2007 16 RF Device Data Freescale Semiconductor