Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. • Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power — 900 mW PEP Power Gain — 13 dB Efficiency — 38% • High Gain, High Efficiency and High Linearity • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • N Suffix Indicates Lead - Free Terminations • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. 800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 4.58 0.037 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Symbol Value Unit RθJC 27.3 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case @ 85°C Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 0 (Minimum) Machine Model M1 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MW4IC001NR4 MW4IC001MR4 1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 50 µA) VGS(th) 2 3 5 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 10 mA) VGS(Q) 2 3.7 5 Vdc Drain - Source On - Voltage (VGS = 10 V, ID = 0.05 A) VDS(on) — 0.48 0.9 Vdc Forward Transconductance (VDS = 10 V, ID = 0.1 A) gfs — 0.05 — S Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 45 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.62 — pF Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Gps — 13 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) ηD — 29 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) IMD — - 28 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) IRL — - 18 — dB P1dB — 0.85 — W Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) ηD 35 38 — % Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) IRL - 10 - 16 — dB Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz) MW4IC001NR4 MW4IC001MR4 2 RF Device Data Freescale Semiconductor VGG C1 VDD C2 + Z6 C7 C6 C8 Z7 R1 RF INPUT DUT Z1 Z2 C3 C9 Z3 Z4 Z5 Z9 Z10 Z11 L2 Z12 C5 L1 C10 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 R2 Z8 C11 C12 Z13 RF OUTPUT C13 C4 1.331″ 0.126″ 0.065″ 0.065″ 0.680″ 1.915″ 0.120″ x 0.044″ x 0.076″ x 0.175″ x 0.195″ x 0.145″ x 0.055″ x 0.141″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 PCB 0.062″ x 0.044″ to 0.615″ Taper 0.082″ x 0.615″ Microstrip 0.075″ x 0.044″ Microstrip 0.625″ x 0.044″ Microstrip 1.375″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 0.1 µF, 100 V Chip Capacitors C1210C104K5RACTR Kemet C2, C3, C5, C7 43 pF, 500 V Chip Capacitors 100B430JP500X ATC C4 12 pF, 500 V Chip Capacitor 100B120JP500X ATC C8 22 µF, 35 V Tantalum Chip Capacitor T491X226K035AS Kemet C9 4.7 pF, 500 V Chip Capacitor 100B4R7CP500X ATC C10, C11 0.6 - 4.5 pF, 500 V Variable Capacitors 27271SL Johanson C12 2.7 pF, 500 V Chip Capacitor 100B2R7CP500X ATC C13 3.3 pF, 500 V Chip Capacitor 100B3R3CP500X ATC L1 5.6 nH Chip Inductor 0805 Series AVX L2 10 nH Chip Inductor 1008 Series ATC R1 100 W Chip Resistor CRCW12061001F100 Dale R2 20 W Chip Resistor CRCW120620R0F100 Dale MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 3 VGG C1 V DD C8 C2 C6 C7 C9 R1 C3 C4 C10 L1 R2 C12 L2 C5 C11 C13 MW4IC001MR4 900 MHz Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 4 RF Device Data Freescale Semiconductor 50 −15 IRL 46 42 −17 ηD −19 −21 38 VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two −Tone Measurement 100 kHz Tone Spacing 34 30 26 22 −23 −25 −27 −29 IM3 −31 18 Gps 14 10 855 860 −33 865 870 875 880 885 890 895 900 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS - 900 MHz −35 905 f1, FREQUENCY (MHz) Figure 3. Two-Tone Performance versus Frequency 55 13 50 12 45 P1dB 11 40 10 35 9 30 8 25 VDS = 28 Vdc IDQ = 14 mA f = 880 MHz 7 20 15 1.4 6 0 0.2 0.4 0.6 0.8 1.0 −25 1.2 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 14 60 ηD Gps ηD, DRAIN EFFICIENCY (%) 15 IDQ = 8 mA −35 10 mA 18 mA −40 16 mA −45 14 mA Two −Tone Measurement 100 kHz Tone Spacing 12 mA −50 −55 0.01 0.1 1 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) PEP Figure 4. CW Performance versus Output Power Figure 5. Intermodulation Distortion versus Output Power −25 10 −25 −30 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz f2 = 880.1 MHz −35 −40 −45 3rd Order −50 −55 5th Order −60 Two −Tone Measurement 100 kHz Tone Spacing −65 7th Order −70 0.01 0.1 1 10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz −30 −30 −35 −40 10 MHz −45 1 MHz Tone Spacing = 100 kHz −50 0.01 0.1 VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two −Tone Measurement 1 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Third Order Intermodulation Distortion versus Output Power 10 MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 5 Z5 VGG Z12 + C1 VDD C2 + Z4 C4 C6 Z11 R1 RF INPUT Z8 DUT Z1 Z2 Z3 Z6 Z9 Z13 Z10 Z15 Z14 RF OUTPUT Z7 C5 C3 C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.018″ 0.495″ 0.893″ 1.340″ 0.912″ 0.241″ 0.076″ 0.294″ x 0.044″ x 0.296″ x 0.500″ x 0.022″ x 0.022″ x 0.500″ x 0.150″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.067″ x 0.264″ Microstrip 0.457″ x 0.492″ Microstrip 0.719″ x 0.022″ Microstrip 1.149″ x 0.022″ Microstrip 0.677″ x 0.434″ Microstrip 0.095″ x 0.264″ Microstrip 0.772″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C2, C4 10 pF, 500 V Chip Capacitors 100B100JCA500X ATC C3, C5 10 pF, 500 V Chip Capacitor 600S100JW ATC C7 0.6 - 4.5 pF, 500 V Variable Capacitor 27271SL Johanson R1 1 kW Chip Resistor CRCW12061021F100 Dale VDD VGG C1 C6 C2 C4 R1 C3 C5 C7 MW4IC001MR4 1990 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 6 RF Device Data Freescale Semiconductor 40 35 30 −11 IRL −14 ηD −17 −20 25 VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two−Tone Measurement, 100 kHz Tone Spacing 20 −23 15 Gps −26 10 IMD −29 −32 5 0 1930 1940 1950 1960 1970 1980 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS - 1990 MHz −35 1990 f1, FREQUENCY (MHz) 14.4 56 48 G ps , POWER GAIN (dB) 14.0 13.6 40 13.2 32 P1dB VDD = 28 Vdc IDQ = 12 mA f = 1990 MHz 12.8 ηD 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16 1.1 1.2 1.3 IMD, INTERMODULATION DISTORTION (dBc) 5th Order −55 −60 7th Order −75 16 mA −50 −55 9.6 mA 12 mA VDD = 28 Vdc f1 = 1990 MHz, f2 = 1990.1 MHz Two −Tone Measurement 100 kHz Tone Spacing 0.01 1 0.1 Figure 12. Intermodulation Distortion versus Output Power 3rd Order −70 −45 Figure 11. CW Performance versus Output Power −40 −65 −40 Pout, OUTPUT POWER (WATTS) PEP −35 −50 IDQ = 20 mA −35 Pout, OUTPUT POWER (WATTS) −30 −45 −30 −60 VDD = 28 Vdc IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz Two−Tone Measurement, 100 kHz Tone Spacing 0.01 0.1 1 IMD, THIRD ORDER INTERMODULATION (dBc) 12.4 0.1 24 ηD, DRAIN EFFICIENCY (%) Gps IMD, INTERMODULATION DISTORTION (dBc) Figure 10. Two-Tone Performance versus Frequency −30 −35 −40 10 MHz −45 −50 1 MHz VDD = 28 Vdc IDQ = 12 mA f1 = 1990 MHz f2 = f1 + Tone Spacing Two −Tone Measurement −55 100 kHz −60 0.01 0.1 OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 13. Intermodulation Distortion Products versus Output Power Figure 14. Third Order Intermodulation Distortion versus Output Power 1 MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 7 Z5 VGG Z12 + C1 VDD C2 + Z4 C4 C6 Z11 R1 RF INPUT Z8 DUT Z1 Z2 Z3 Z6 Z9 Z13 Z10 Z15 Z14 RF OUTPUT Z7 C5 C3 C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.267″ 0.058″ 0.758″ 1.073″ 1.361″ 0.205″ 0.109″ 0.210″ x 0.044″ x 0.044″ x 0.256″ x 0.022″ x 0.022″ x 0.332″ x 0.150″ x 0.150″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.106″ x 0.344″ Microstrip 0.783″ x 0.500″ Microstrip 0.847″ x 0.022″ Microstrip 1.055″ x 0.022″ Microstrip 0.291″ x 0.387″ Microstrip 0.050″ x 0.287″ Microstrip 0.950″ x 0.044″ Microstrip Rogers RO4350, 0.020″, εr = 3.5 Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C2, C4 10 pF, 500 V Chip Capacitors 100B100JCA500X ATC C3, C5 10 pF, 500 V Chip Capacitor 600S100JW ATC C7 0.6 - 4.5 pF, 500 V Variable Capacitor 27271SL Johanson R1 1 kW Chip Resistor CRCW12061021F100 Dale VDD VGG C1 C6 C4 C2 R1 C5 C3 C7 MW4IC001MR4 2170 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout MW4IC001NR4 MW4IC001MR4 8 RF Device Data Freescale Semiconductor 32 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS - 2170 MHz −13 IRL 27 ηD VDD = 28 Vdc Pout = 0.9 W (PEP) IDQ = 12 mA Two−Tone Measurement, 100 kHz Tone Spacing 22 17 −18 −23 IMD −28 Gps 12 2110 2120 2130 2140 2150 −33 2170 2160 f, FREQUENCY (MHz) Figure 17. Two-Tone Performance versus Frequency Gps 50 13.0 40 12.6 30 12.2 ηD 20 P1dB VDD = 28 Vdc IDQ = 12mA f = 2170 MHz 11.8 11.4 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VDD = 28 Vdc, IDQ = 12 mA, f1 = 2170 MHz, f2 = 2170.1 MHz Two−Tone Measurement, 100 kHz Tone Spacing 3rd Order 5th Order −60 −70 −45 9.6 mA 12 mA −50 0.1 Figure 19. Intermodulation Distortion versus Output Power −55 −65 16 mA −40 Figure 18. CW Performance versus Output Power −45 −50 20 mA −35 Pout, OUTPUT POWER (WATTS) PEP −35 −40 −30 0.01 IMD,THIRD ORDER INTERMODULATION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −30 −25 VDD = 28 Vdc f1 = 2170 MHz, f2 = 2170.1 MHz Two−Tone Measurement 100 kHz Tone Spacing IDQ = 7.2 mA Pout, OUTPUT POWER (WATTS) PEP −20 −25 −20 ηD, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 13.4 60 IMD, INTERMODULATION DISTORTION (dBc) 13.8 7th Order 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP Figure 20. Intermodulation Distortion Products versus Output Power 1 1 −20 −25 −30 −35 VDD = 28 Vdc IDQ = 12 mA f1 = 2170 MHz f2 = f1 + Tone Spacing Two −Tone Measurement 1 MHz 10 MHz −40 −45 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 Figure 21. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 9 f = 860 MHz Zload f = 900 MHz Zo = 50 Ω Zsource f =860 MHz f = 900 MHz VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP f MHz Zsource Ω Zload Ω 860 27.853 + j5.908 15.492 + j63.669 865 28.617 + j6.078 15.592 + j68.687 870 29.458 + j6.285 15.788 + j69.799 875 30.306 + j6.422 15.835 + j70.863 880 31.223 + j6.567 15.975 + j71.920 885 32.194 + j6.660 16.094 + j73.091 890 33.228 + j6.656 16.286 + j74.159 895 34.293 + j6.624 16.344 + j75.236 900 35.424 + j6.508 16.628 + j76.283 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 10 RF Device Data Freescale Semiconductor f = 2180 MHz Zload f = 1920 MHz f = 2100 MHz f = 2000 MHz Zload f = 2180 MHz f = 2000 MHz f = 2100 MHz Zsource f = 1920 MHz Zsource Zo = 50 Ω Zo = 50 Ω VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz Zsource Ω Zload Ω f MHz Zsource Ω Zload Ω 1920 4.238 + j15.142 7.764 + j28.829 2100 2.667 + j12.903 5.892 + j26.374 1930 4.322 + j15.362 8.056 + j29.352 2110 2.671 + j13.070 6.092 + j26.739 1940 4.490 + j15.466 8.436 + j29.727 2120 2.664 + j13.224 6.281 + j27.094 1950 4.605 + j15.711 8.809 + j30.249 2130 2.694 + j13.431 6.540 + j27.510 1960 4.752 + j15.904 9.183 + j30.763 2140 2.703 + j13.511 6.748 + j27.795 1970 4.905 + j16.050 9.598 + j31.213 2150 2.702 + j13.700 6.996 + j28.182 1980 5.071 + j16.236 10.030 + j31.690 2160 2.745 + j13.952 7.300 + j28.678 1990 5.262 + j16.446 10.546 + j32.237 2170 2.754 + j14.026 7.562 + j28.987 2000 5.487 + j16.632 11.054 + j32.726 2180 2.784 + j14.206 7.862 + j29.411 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 23. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 11 NOTES MW4IC001NR4 MW4IC001MR4 12 RF Device Data Freescale Semiconductor NOTES MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 13 NOTES MW4IC001NR4 MW4IC001MR4 14 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A F 3 B D 1 2 R L NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. 4 N K 0.35 (0.89) X 45_" 5 _ Q 10_DRAFT U H ZONE V ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ ÉÉÉ ÉÉ ÉÉÉ 4 ZONE W C Y Y 2 1 3 G P S ZONE X VIEW Y - Y STYLE 1: PIN 1. 2. 3. 4. CASE 466 - 03 ISSUE C PLD- 1.5 PLASTIC DRAIN GATE SOURCE SOURCE E DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MW4IC001NR4 MW4IC001MR4 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MW4IC001NR4 MW4IC001MR4 Document Number: MW4IC001MR4 Rev. 3, 1/2005 16 RF Device Data Freescale Semiconductor