GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm(inch) Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1) 7.0 (0.28) 0.25 (0.01) 7.6 (0.3) 1.4 (0.06) 1.4 (0.06) Weight: 0.16 (g) ABSOLUTE MAXIMUM RATINGS Items Type Repetitive Peak Reverse Voltage VRRM V Average Forward Current IF(AV) A Surge(Non-Repetitive) Forward Current DSM3MA1 DSM3MA2 DSM3MA4 100 200 400 Single-phase half sine wave 180° conduction 3.0 TL = 108°C ( ) IFSM A 80( Without PIV, 10ms, conduction Tj = 40°C start ) I2t Limit Value I2t A2s 25.6( Time = 2 ~ 10ms, I = RMS value ) Operating Junction Temperature Tj °C -40 ~ +150 Tstg °C -40 ~ +150 Symbols Units Storage Temperature CHARACTERISTICS(TL=25°C) Items Min. Typ. Peak Reverse Current IRRM µA - - Peak Forward Voltage VFM V - - Rth(j-a) °C/W - - Steady State Thermal Impedance Rth(j-l) Max. Test Conditions 20 DSM3MA1,2 10 DSM3MA4 1.0 IFM=3.0Ap, Single-phase half sine wave 1 cycle 80 13 Rated VRRM On glass-epoxi substrate ( Soldering land ( 10mm) 50mm) PDE-DSM3MA-0 DSM3MA PEAK FORWARD CURRENT (A) 100 Max. average forward power dissipation (Resistive or inductive load) Single-phase half sine wave Conduction : 10ms 1 Cycle 10 TL=150˚C TL=25˚C 1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 MAX. AVERAGE FORWARD POWER DISSIPATION (W) Forward characteristics 5.0 DC 4.5 4.0 Single-phase ( 50Hz ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 PEAK FORWARD VOLTAGE DROP (V) AVERAGE FORWARD CURRENT (A) Transient thermal impedance 180 200 160 100 TRANSIENT THERMAL IMPEDANCE (˚C/W) MAX. ALLOWABLE LEAD TEMPERATURE (˚C) Max. allowable lead temperature (Resistive or inductive load) 140 120 100 80 Single-phase half sine wave 180˚ conduction (50Hz) 60 Lead temperature 40 20 0 0 On glass-epoxi substrate ( 50mm) Soldering land ( 10mm) 0.5 1.0 1.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 AVERAGE FORWARD CURRENT (A) 4.0 Rth(j-a) Rth(j-L) 10 Lead temperature 1 Soldering land ( 10mm) On glass-epoxi substrate( 50mm) 0.1 0.001 0.01 0.1 1 10 100 TIME (s) PDE-DSM3MA-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located “Inquiry” portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse