GENERAL-USE RECTIFIER DIODE DSM1D OUTLINE DRAWING 5 (0.2) Yellow White Blue Red Green Cathode band φ 0.6 (0.024) 1D1 27MIN. (1.06) Type DSM1D1 DSM1D2 DSM1D4 DSM1D6 DSM1D8 59MIN. (2.32) 27MIN. (1.06) Direction of polarity Color of cathode band Unit in mm(inch) φ 2.65 (0.10) • For general purpose. • Diffused-junction. Resin encapsulated. Type mark FEATURES Weight: 0.23 (g) ABSOLUTE MAXIMUM RATINGS Items Type DSM1D1 DSM1D2 DSM1D4 DSM1D6 DSM1D8 Repetitive Peak Reverse Voltage VRRM V 100 Average Forward Current IF(AV) A Single-phase half sine wave 180° conduction 1.0 TL = 70°C, Lead length = 6mm Surge(Non-Repetitive) Forward Current IFSM A I2t Limit Value I2t A2s Operating Junction Temperature Tj °C -40 ~ +150 Tstg °C -40 ~ +150 Storage Temperature Notes 200 400 600 800 ( 45 ) 30 ( Without PIV, 10ms conduction, Tj = 40°C start ) 8.1 3.6 ( Time = 2 ~ 10ms, I = RMS value ) (1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max.. (2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle. CHARACTERISTICS(TL=25°C) Symbols Units Min. Typ. Peak Reverse Current IRRM µA - - Peak Forward Voltage VFM V - - Rth(j-a) °C/W - - Items Steady State Thermal Impedance Rth(j-l) Max. Test Conditions 20 DSM1D1,2 10 DSM1D4,6,8 1.1 IFM=1.0Ap, Single-phase half sine wave 1 cycle 100 70 Rated VRRM Lead length = 6 mm PDE-DSM1D-0 DSM1D Max. average forward power dissipation (Resistive or inductive load) 100 PEAK FORWARD CURRENT (A) Single-phase half sine wave Conduction : 10ms 1 Cycle 10 TL=150˚C TL=25˚C 1 0.1 0 1 2 3 4 MAX. AVERAGE FORWARD POWER DISSIPATION (W) Forward characteristics 2.0 DC 1.5 Single-phase ( 50Hz ) 1.0 0.5 0 0 0.2 PEAK FORWARD VOLTAGE DROP (V) Single-phase half sine wave 180˚ conduction (50Hz) 160 140 120 100 80 Lead length =6mm L 60 PC board (100×180×1.6t) Copper foil ( 5.5) 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.0 1.2 1.4 1.6 Single-phase half sine wave 180˚ conduction (50Hz) 160 140 120 100 80 Lead length =6mm L 60 40 Lead temp Copper foil ( 5.5) 20 PC board (100×180×1.6t) 0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 AVERAGE FORWARD CURRENT (A) Surge forward current characteristic (Non-repetitive) Transient thermal impedance 60 0 50 TRANSIENT THERMAL IMPEDANCE (˚C/W) Surge current peak value SURGE FORWARD CURRENT (A) 0.8 180 AVERAGE FORWARD CURRENT (A) 10ms 1 cycle Without PIV 40 30 DSM1D1,2,4 20 DSM1D6,8 10 0 0.6 Max. allowable lead temperature (Resistive or inductive load) MAX. ALLOWABLE LEAD TEMPERATURE (˚C) MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C) Max. allowable ambient temperature (Resistive or inductive load) 180 0.4 AVERAGE FORWARD CURRENT (A) 1 10 CYCLES 100 Rth(j-a) 100 Rth(j-l) 10 L Lead length =6mm Lead temp Copper foil ( 5.5) 1.0 PC board (100×180×1.6t) 0.1 0.001 0.01 0.1 1.0 10 100 TIME (s) PDE-DSM1D-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located “Inquiry” portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse