IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base). C E E G Weight: 350 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5) Symbol Unit MBN400C20 VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V 2,000 ±20 400 800 400 800 3,000 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 2/10 2.8 Notes: (1)Recommended Value 1.8±0.2/9±1N.m CHARACTERISTICS A A W °C °C VRMS N.m (1) (2) (2)Recommended Value 2.6±0.2N.m (Tc=25°C ) Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time Symbol Unit Min. Typ. Max. I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr mA nA V V nF 4.0 - 4.2 5.1 46 1.4 1.7 1.8 4.0 2.4 0.5 4.0 ±200 5.2 7.0 100 2.3 2.6 2.4 5.9 3.4 0.9 Test Conditions VCE=2,000V,VGE=0V VGE=±20V,VCE=0V IC=400A,VGE=15V VCE=10V, IC =400mA VCE=10V,VGE=0V,f=100KHz VCC=1,000V,Ic=400A ms L=200nH RG=12W (3) VGE=±15V Tc=125°C -Ic=400A,VGE=0V V ms Vcc=1,000V,-Ic=400A,L=200nH, Tc=125°C (4) °C/W Thermal Impedance IGBT Rth(j-c) 0.033 Junction to case FWD Rth(j-c) 0.10 Notes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V PDE-N400C20-0 TYPICAL 1000 Tc=25°C TYPICAL 1000 Tc=125°C VGE=15V 14V VGE=15V 13V 12V Collector Current, Ic (A) Collector Current, Ic (A) 14V 11V 500 10V 9V 13V 12V 500 11V 10V 9V 8V 8V 7V 7V 0 0 1 2 3 4 5 6 7 8 9 0 0 10 TYPICAL 2 3 4 5 6 7 8 9 10 TYPICAL 1000 VGE=0 Tc=25°C Tc=125°C [Conditions] VGE=0 f=100KHz Tc=25°C 100 Cies, Coes, Cres(nF) Forward Current, IF (A) 1000 1 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 500 Cies 10 Coes 1 Cres 0 0 1 2 3 4 0.1 0.1 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode TYPICAL [Conditions] Tc=125°C VCC=1000V Lp≈200nH RG(on)=12Ω RG(off)=12Ω VGE=±15V Inductive Load 4 10 TYPICAL [Conditions] V Tc=125°C VCC=1000V Lp≈200nH 00 RG(on)=12Ω RG(off)=12Ω VGE=±15V Inductive Load IC CE 0.4 3 td(off) 2 tf tr 1 100 0.5 Turn-on Loss Eon (J/pulse) Switching Time, td(on), tr, td(off), tf,trr (µs) 5 1 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage 10% 10% VGE t1t3 t4 t2 t4 Eon(10%)= t3 t2 . . IC VCE dt IC VCE dt Eon(full)= t1 0.3 full 0.2 10% 0.1 trr td(on) 0 0 100 200 300 400 Collector Current, IC(A) Switching time vs. Collector current 500 0 0 100 200 300 400 500 Collector Current IC (A) Turn-on Loss vs. Collector Current PDE-N400C20-0 TYPICAL full 10% Turn-off Loss Eoff (J/pulse) 0.4 0.3 0.2 [Conditions] Tc=125°C VCC=1000V 0 Lp≈200nH 0 RG(on)=12Ω RG(off)=12Ω VGE=±15V Inductive Load 0.1 0 0 100 200 IC VCE 10% 10% VGE TYPICAL 0.5 Reverse Recovery Loss Err (J/pulse) 0.5 [Conditions] Tc=125°C VCC=1000V Lp≈200nH 0 RG(on)=12Ω RG(off)=12Ω VGE=±15V Inductive Load 0.4 VCE IRM 0.1 IRM 10% t IC t9 t11 t12 . I .V t12 t10 IC VCE dt Err(10%)= t11 t10 Err(full)= C t9 CE dt 0.3 full 0.2 10% t 0.1 t5 t7 Eoff(10%)= Eoff(full)= 300 t8 t8 t6 . t7 t6 I .V IC VCE dt C CE dt t5 400 500 Collector Current IC (A) Turn-off Loss vs. Collector Current 0 0 100 200 300 400 500 Collector Current IC (A) Reverse Recovery Loss vs. Collector Current Transient Thermal Impedance, Rth(j-c) (°C/W) 1 Diode 0.1 IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-N400C20-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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