IGBT MODULE MBN400C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. 2-M8 (delta Tc=70°C,N>20,000cycles) 2-M4 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. 4-φ5.8 *Low driving power due to low input 33.4 capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base). C E E G TERMINALS Weight: 720 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5) Symbol Unit MBN400C33A VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V 3,300 ±20 400 800 400 800 4,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 2.8 Notes: (1)Recommended Value 1.8±0.2/9±1N.m CHARACTERISTICS A A W °C °C VRMS N.m (1) (2) (2)Recommended Value 2.6±0.2N.m (Tc=25°C ) Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time Symbol Unit Min. Typ. Max. I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr mA nA V V nF 4.0 - 4.5 5.5 50 1.6 2.3 2.1 3.4 3.0 0.5 4.0 ±200 5.5 7.0 2.6 3.2 2.8 5.3 4.0 0.9 Test Conditions VCE=3,300V,VGE=0V VGE=±20V,VCE=0V IC=400A,VGE=15V VCE=10V, IC =400mA VCE=10V,VGE=0V,f=100KHz VCC=1,650V,Ic=400A ms L=150nH RG=10W (3) VGE=±15V Tc=125°C -Ic=400A,VGE=0V V ms Vcc=1,650V,-Ic=400A,L=150nH, Tc=125°C (4) °C/W Thermal Impedance IGBT Rth(j-c) 0.025 Junction to case FWD Rth(j-c) 0.05 Notes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V PDE-N400C33A-0 TYPICAL 1000 TYPICAL 1000 Tc=125°C Tc=25°C 15V 14V13V 12V 15V 14V 13V 12V Collector Current, Ic (A) Collector Current, Ic (A) 11V 10V 500 9V 11V 500 10V 9V 8V 8V 7V 7V 0 0 2 4 6 8 0 0 10 TYPICAL 4 6 8 10 TYPICAL 1000 VGE=0 Tc=25°C Tc=125°C Cies Cies, Coes, Cres(nF) Forward Current, IC (A) 1000 2 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 500 10 Coes Cres 1 Tc=25°C 0 0 1 2 3 4 0.1 0.1 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode TYPICAL 10 100 TYPICAL 1 [Conditions] VCC=1650V,Tc=125°C VGE=±15V,RG=10Ω Lp≈150nH Inductive Load [Conditions] VCC=1650V,Tc=125°C VGE=±15V,RG=10Ω Lp≈150nH Inductive Load 0.8 full 3 Turn-on Loss Eon (J/pulse) Switching Time, td(on), tr, td(off), tf,trr (µs) 4 1 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage tf 2 tr td(off) 1 10% 0.6 0.4 0.2 td(on) trr 0 0 100 200 300 400 Collector Current, IC(A) Switching time vs. Collector current 500 0 0 100 200 300 400 500 Collector Current IC (A) Turn-on Loss vs. Collector Current PDE-N400C33A-0 TYPICAL 1 Turn-off Loss Eoff (J/pulse) 0.8 0.6 full 10% 0.4 0.2 0 0 100 200 300 400 Collector Current IC (A) Turn-off Loss vs. Collector Current 500 TYPICAL 1 Reverse Recovery Loss Err (J/pulse) [Conditions] VCC=1650V,Tc=125°C VGE=±15V,RG=10Ω Lp≈150nH Inductive Load [Conditions] VCC=1650V,Tc=125°C VGE=±15V,RG=10Ω Lp≈150nH Inductive Load 0.8 0.6 full 0.4 10% 0.2 0 0 100 200 300 400 500 Collector Current IC (A) Reverse Recovery Loss vs. Collector Current PDE-N400C33A-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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