GaAs MMIC CGY 353 Data Sheet • • • • • 3-stage power amplifier for 3.5 GHz applications Linear Output power 31.0 dBm Gain of 21.0 dB typ. Operating voltage 7.0 V typ. Unconditionally stable MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGY 353 CGY 353 Q62702-G82 MW-16 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 8.0 V Supply current ID 2.0 A Maximum input power PIN_max 17.0 dBm Channel temperature TCh 150 °C Storage temperature Tstg – 55 … + 150 °C Total power dissipation (TS ≤ 81 °C) TS: Temperature at soldering point Ptot 7.0 W Pulse peak power dissipation duty cycle 30%, tON = 0.5 ms PPulse 11.0 W Parameter Symbol Value Unit Channel-soldering point RthChS t.b.d. K/W Data Sheet 1 Thermal Resistance 2001-01-01 GaAs Components CGY 353 VG1 VD1 VG2 VD2 VG3 RF OUT / RF IN VD3 GND Figure 1 GND EHT08779 Functional Block Diagram Pin Configuration Pin No. Name Configuration Bias Voltage 1 RF IN RF input1) – 2 GND GND 0V 3 GND GND 0V 4 GND GND 0V 5 GND GND 0V 6 GND GND 0V 7 VD1 1st RF Amp Drain Bias pos. voltage2) 8 VG2 2nd RF Amp Gate Bias neg. voltage3) 9 VG1 1st RF Amp Gate Bias neg. voltage3) 10 GND GND 0V 11 GND GND 0V 12 RF OUT/VD3 RF output/3rd RF Amp Drain Bias pos. voltage2) 13 RF OUT/VD3 RF output/3rd RF Amp Drain Bias pos. voltage2) 14 RF OUT/VD3 RF output/3rd RF Amp Drain Bias pos. voltage2) 15 VG3 Data Sheet 3rd RF Amp Gate Bias 2 neg. voltage3) 2001-01-01 GaAs Components CGY 353 Pin Configuration (cont’d) Pin No. Name Configuration Bias Voltage 16 VD2 2nd RF Amp Drain Bias pos. voltage2) MW-16 Heatsink Slug GND OWP Ground 0V 1) 2) 3) The gate voltage of the 1st RF Amp is not blocked internally (see also Figure 1). Therefore VG1 must be blocked externally at RF IN. The positive DC voltages of VD1, VD2 and VD3 are typically equal. The voltage range is typically between + 5.0 V and + 7.0 V. The negative DC voltages of VG1, VG2 and VG3 are typically equal. The voltage range depends on the wanted drain current. A gate voltage of – 2.1 V will set ID typically to 1.2 A at VD = 7.0 V. In that case ID1 will have about 70 mA, ID2 about 270 mA and ID3 about 900 mA. Data Sheet 3 2001-01-01 GaAs Components CGY 353 Electrical Characteristics Conditions: VD = 7.0 V, TA = 25 °C, f = 3425 - 3450 MHz, ZS = ZL = 50 Ω, pulsed operation mode, duty cycle = 30%, unless otherwise specified. Parameters Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD – 1.2 – A – Power down current IPdown – 10 – mA – Supply current neg. voltage IG – 1 – mA – Gain at nominal linear output power G – 21 – dB – Linear Output Power POUT – 31 – dBm PIN = 12 dBm PSAT – 33 – dBm PIN = 14 dBm Overall Power added PAE Efficiency – 15 – % PIN = 10 dBm Adjacent channel power1) ACP – – – 30 dBc ± 156 kHz beside carrier Input return loss2) S11 10 – – dB PIN = 10 dBm Output return loss S22 8 – – dB PIN = 10 dBm Noise Figure NF – 5 – dB – Saturation Output Power 1) 2) Modulation: π/4 DQPSK with an alpha = 0.4 root raised cosine filtered Symbol rate: 256 ksymbols/s. Transmission burst: Each burst has a 500 s nominal duration with 20 dB of raised cosine shaping of 8 s duration at the beginning and the end of the burst. A maximum of three bursts occur in each 5 ms period, but consecutive bursts are separated by a minimum interval of 1 ms. Duty cycle: 30%, 3 bursts per 5 ms frame with a minimum interval of 1 ms between bursts. The modulation signal has a peak to mean envelope ratio of 3.1 dB. Values of S11 and S22 with match as realized on application board. Data Sheet 4 2001-01-01 GaAs Components CGY 353 X6 SMA Input X1 C 15 C 18 100 nF 100 nF 10 pF L1 C7 C3 8 nH 1 pF IC1 1 2 3 4 5 6 7 8 C1 2.7 pF C2 C5 100 nF 10 pF X7 C6 10 pF 16 RF IN VG1 15 GND GND 14 GND GND 13 GND RF OUT/VD3 12 GND RF OUT/VD3 11 GND RF OUT/VD3 10 VD1 VG3 9 VG2 VD2 GND Backside MW16 CGY 353 17 X5 X6 C 16 C 19 100 nF 10 pF L2 C 10 0.5 pF Lambda/4 70 Ω C 14 0.5 pF C 20 1 pF C 11 C 13 C 17 2.7 pF 10 pF 100 nF X4 SMA Output X2 X3 EHT09231 Figure 2 Application Circuit Notes: Input and output line: 50 Ω C10 and C14: 0402 capacitors All other capacitors: 0603 C20: AVX 06035J1R0BBT L1: Coilcraft Air Core Inductor A03T Suggested Heat Sink: about 7 K/W VD3 additionally blocked with 4.7 µF/16 V at connection X7 Data Sheet 5 2001-01-01 GaAs Components CGY 353 Package Outlines MW-16 (Special Package) 1.6 max 7 0.1 max 0.2 7 x 0.8 = 5.6 1.4 ±0.1 A-B D C 0.35±0.05 B H 7 9 D M 4x 0.2 A-B D H 16x 0.2 D +0.05 0.15 -0. 06 0˚...7˚ 16x 0.1 C Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet 0.8 Exposed solderable heatsink ø4.57 ±0.05 GPW05969 C A 6 Dimensions in mm 2001-01-01