GaAs MMIC CGY 197 Data Sheet • Multiband Power Amplifier (800 … 3500 MHz) • DECT, PHS, PWT, Bluetooth, ISM900, ISM2400 • Single Voltage Supply • POUT = 25.0 dBm at VD = 2.1 V • POUT = 25.5 dBm at VD = 2.3 V • POUT = 27.5 dBm at VD = 3.0 V • POUT = 30.0 dBm at VD = 5.0 V • Operating voltage range: 2.0 to 6 V • Overall power added efficiency up to 50% • Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! SCT-598 Type Marking Ordering Code (taped) Package CGY 197 D7s Q62702-G0116 SCT-598 Maximum Ratings Parameter Symbol Value Unit Positive supply voltage VD 6 V Supply current ID 1.0 A Maximum input power PIN_max 20 dBm Channel temperature TCh 150 °C Storage temperature Tstg – 55 … + 150 °C Total power dissipation (TS ≤ 81 °C) TS: Temperature at soldering point Ptot 1.0 W Pulse peak power PPulse 2.0 W Data Sheet 1 2001-01-01 GaAs Components CGY 197 Thermal Resistance Parameter Symbol Value Unit Channel-soldering point RthChS 70 K/W VD1 VD2 Harm RF IN / VG RF OUT / VD3 GND Figure 1 GND GND EHT08767 Functional Block Diagram Pin Configuration Pin No. Symbol Configuration 1 RF IN/VG RF input power + Gate voltage [0 V internal] 2 GND RF and DC ground 3 VD2 Pos. drain voltage of the 2nd stage 4 N.C. Not connected 5 Harm Harmonic Match 6 RF OUT/VD3 RF output power/Pos. drain voltage of the 3rd stage 7 GND RF and DC ground 8 VD1 Pos. drain voltage of the 1st stage Data Sheet 2 2001-01-01 GaAs Components CGY 197 DC Characteristics Characteristics Drain current stage 1 - 3 Transconductance stage 1 - 3 Symbol Limit Values Unit Test Conditions min. typ. max. IDSS1 – 40 – mA VD1 = 3 V IDSS2 – 90 – mA VD2 = 3 V IDSS3 – 390 – mA VD3 = 3 V GFS1 – 75 – mS VD = 3 V, ID = 40 mA GFS2 – 160 – mS VD = 3 V, ID = 90 mA GFS3 – 700 – mS VD = 3 V, ID = 390 mA Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: • When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. • When RthSA is already known: TS = PDiss × RthSA + TA Data Sheet 3 2001-01-01 GaAs Components CGY 197 Permissible Total Power Dissipation in DC Operation EHT08768 1600 mW Ptot DC 1200 1000 800 600 400 200 0 0 50 100 ˚C 150 TS b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC × Pulse factor = Ptot-DC × (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Sheet 4 2001-01-01 GaAs Components CGY 197 Pulse Factor EHT08748 10 1 tp Ptot max Ptot DC tp D= T T D= 5 10 0 -6 10 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = “Pulse peak power” = 2 W c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = (PDiss × Channel temperature (= junction temperature) Power dissipated in Rth of device from the chip. It does not channel to contain decoupled soldering point RF- power Data Sheet RthChS) + 5 TS Temperature of soldering point, measured or calculated 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 3.0 V ISM 2400 MHz Application TA = 25 °C, f = 2.40 GHz, ZS = ZL = 50 Ω, unless otherwise specified Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD – 450 – mA VD = 3.0 V; PIN = – 10 dBm Supply current IDD – 290 – mA VD = 2.1 V; PIN = 0 dBm Output Power PO – 24.3 – dBm VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE – 44 – % VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE – 46 – % VD = 2.1 V; PIN = 3 dBm Supply current IDD – 305 – mA VD = 2.3 V; PIN = 0 dBm Output Power PO – 24.8 – dBm VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE – 43 – % VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE – 45 – % VD = 2.3 V; PIN = 3 dBm Supply current IDD – 335 – mA VD = 3.0 V; PIN = 0 dBm Output Power PO – 26.2 – dBm VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE – 41 – % VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE – 43 – % VD = 3.0 V; PIN = 3 dBm Off Isolation -S21 – 35 – dB VD = 0 V; PIN = 0 dBm Data Sheet 6 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 3.0 V ISM 2400 MHz Application (cont’d) TA = 25 °C, f = 2.40 GHz, ZS = ZL = 50 Ω, unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch – typ. Unit Test Conditions – PIN = 0 dBm, VD ≤ 3.0 V, ZS = 50 Ω max. No module damage for 10 s Load VSWR = 20:1 for all phase Load mismatch – No module damage for 10 s – PIN = 3 dBm, VD ≤ 3.0 V, ZS = 50 Ω Load VSWR = 20:1 for all phase Stability – All spurious output more – than 70 dB below desired signal level. PIN = 0 dBm, VD = 3.0 V, ZS = 50 Ω Load VSWR = 10:1 for all phase Stability – All spurious output more – than 70 dB below desired signal level. PIN = 3 dBm, VD = 3.0 V, ZS = 50 Ω Load VSWR = 10:1 for all phase Data Sheet 7 2001-01-01 GaAs Components CGY 197 Electrical Characteristics (3.0 V ISM 2400 MHz Application) Ansoft Corporation - Microwave Harmonica (tm) v7.5 08/09/99 14:58:46 30.00 33.00 25.00 30.00 20.00 27.00 15.00 24.00 10.00 21.00 5.00 Y2 Y1 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt mess Y1 dB(S11(ckt=mess)) mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 18.00 0.00 15.00 -5.00 12.00 -10.00 9.00 -15.00 6.00 -20.00 3.00 1.10 1.36 1.62 1.88 2.14 2.40 2.66 FREQ [GHz] 2.92 3.18 3.44 3.70 EHT08770 Figure 2 S-Parameter, VD = 3.0 V, PIN = – 10 dBm, Duty Cycle 10% 08/09/99 14:55:54 Ansoft Corporation - Microwave Harmonica (tm) v7.5 30.00 33.00 25.00 30.00 20.00 27.00 15.00 24.00 10.00 21.00 5.00 Y2 Y1 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt mess Y1 dB(S11(ckt=mess)) mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) 18.00 0.00 15.00 -5.00 12.00 -10.00 9.00 -15.00 6.00 -20.00 3.00 1.10 1.36 1.62 1.88 2.14 2.40 2.66 FREQ [GHz] 2.92 3.18 3.44 3.70 EHT08771 Figure 3 Data Sheet S-Parameter, VD = 3.0 V, PIN = + 3 dBm, Duty Cycle 10% 8 2001-01-01 GaAs Components CGY 197 POUT = f (PIN), VD = 3 V PIN [dBm] POUT [dBm] ID [A] PAE [%] – 10.00 18.93 0.296 8.7 – 9.00 19.84 0.296 10.8 – 8.00 20.74 0.293 13.4 – 7.00 21.59 0.291 16.4 – 6.00 22.43 0.291 19.9 – 5.00 23.44 0.293 25.0 – 4.00 24.17 0.301 28.8 – 3.00 24.92 0.314 32.8 – 2.00 25.56 0.329 36.3 – 1.00 25.94 0.335 38.9 0.00 26.19 0.334 41.3 1.00 26.24 0.327 42.8 2.00 26.15 0.315 43.4 3.00 26.06 0.311 43.0 4.00 25.93 0.307 42.1 5.00 25.82 0.303 41.6 Data Sheet 9 2001-01-01 GaAs Components CGY 197 POUT = f (VD), PIN = 3 dBm VD [V] POUT [dBm] ID [A] PAE [%] 2.0 23.84 0.267 44.9 2.1 24.21 0.271 45.8 2.2 24.46 0.281 44.8 2.3 24.74 0.287 44.8 2.4 25.03 0.289 45.6 2.5 25.26 0.297 44.8 2.6 25.41 0.301 44.1 2.7 25.63 0.304 44.3 2.8 25.78 0.308 43.6 2.9 25.90 0.308 43.3 3.0 26.07 0.312 43.0 3.1 26.19 0.311 42.8 3.2 26.28 0.315 41.8 3.3 26.38 0.318 41.2 3.4 26.46 0.319 40.5 3.5 26.48 0.317 39.8 3.6 26.56 0.317 39.5 3.7 26.57 0.320 38.1 3.8 26.60 0.319 37.6 3.9 26.67 0.317 37.4 4.0 26.68 0.320 36.2 Data Sheet 10 2001-01-01 GaAs Components CGY 197 CGY 197 IN V 1.1 C6 L1 C1 C3 R1 D1 C4 C8 N.C. C7 C2 N.C. D3 C5 D2 C1 = 100 nF C2 = 100 nF OUT C3 = 100 nF C4 = 1.5 pF C5 = 1 nF C6 = 120 pF C7 = 1 pF C8 = 10 pF 0402 L 1 = 4.7 nH R 1 = 2.7 Ω EHT08774 Figure 4 Data Sheet Testboard Layout (3.0 V ISM 2400 MHz Application) 11 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 2.3 V DECT-Application: t.b.m. TA = 25 °C, f = 1.89 GHz, ZS = ZL = 50 Ω, unless otherwise specified pulsed mode: T = 417 µs, duty cycle 12.5% Characteristics Symbol Limit Values min. typ. max. Unit Test Conditions Supply current IDD – 450 – mA VD = 3.0 V; PIN = – 10 dBm Supply current IDD – 330 – mA VD = 2.1 V; PIN = 0 dBm Output Power PO – 25.0 – dBm VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE – 45 – % VD = 2.1 V; PIN = 0 dBm Overall Power added Efficiency PAE – 50 – % VD = 2.1 V; PIN = 3 dBm Supply current IDD – 340 – mA VD = 2.3 V; PIN = 0 dBm Output Power PO – 25.5 – dBm VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE – 45 – % VD = 2.3 V; PIN = 0 dBm Overall Power added Efficiency PAE – 50 – % VD = 2.3 V; PIN = 3 dBm Supply current IDD – 370 – mA VD = 3.0 V; PIN = 0 dBm Output Power PO – 27.5 – dBm VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE – 45 – % VD = 3.0 V; PIN = 0 dBm Overall Power added Efficiency PAE – 50 – % VD = 3.0 V; PIN = 3 dBm Off Isolation -S21 – 40 – dB VD = 0 V; PIN = 0 dBm Data Sheet 12 2001-01-01 GaAs Components CGY 197 Electrical Characteristics, 2.3 V DECT-Application: t.b.m. (cont’d) TA = 25 °C, f = 1.89 GHz, ZS = ZL = 50 Ω, unless otherwise specified pulsed mode: T = 417 µs, duty cycle 12.5% Characteristics Symbol Limit Values min. Load mismatch – typ. Unit Test Conditions – PIN = 0 dBm, VD ≤ 3.0 V, ZS = 50 Ω max. No module damage for 10 s Load VSWR = 20:1 for all phase Load mismatch – No module damage for 10 s – PIN = 3 dBm, VD ≤ 3.0 V, ZS = 50 Ω Load VSWR = 20:1 for all phase Stability – All spurious output more – than 70 dB below desired signal level. PIN = 0 dBm, VD = 3.0 V, ZS = 50 Ω Load VSWR = 10:1 for all phase Stability – All spurious output more – than 70 dB below desired signal level. PIN = 3 dBm, VD = 3.0 V, ZS = 50 Ω Load VSWR = 10:1 for all phase Data Sheet 13 2001-01-01 GaAs Components CGY 197 Package Outlines SCT-598 (Special Package) 2.9 ±0.2 1.1 max. 0.75 1 2 3 4 +0.2 acc.to DIN 6784 +0.1 0.2 -0.05 0.5 +0.1 -0.05 0.15 M 2.6 max. 0.25 min. 7 6 5 0.20 M A A B GPW09182 M 0.1 max. B 2.1 0.15 10˚ max. 8 10˚ max . 0.15 +0.1 -0.06 0.6 1.6 + 0.1 B Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Sheet 14 Dimensions in mm 2001-01-01