GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CGY 93 CGY 93 t.b.d. MW-16 Maximum Ratings Symbol Value Unit Positive supply voltage VD 7.0 V Negative supply voltage VG – 4.0 V Supply current stage 1 ID1 0.6 A Supply current stage 2 ID2 3.5 A Channel temperature TCh 150 °C Storage temperature Tstg – 55 … + 150 °C RF input power Pin 20 dBm Total power dissipation (CW, Tc ≤ 83 °C) Tc: Temperature at soldering point Ptot 7.5 W Pulse peak power dissipation duty cycle 12.5%, ton = 0.577 ms PPuls 17 W Thermal Resistance Symbol Value Unit Junction-Case RthJCh 9.0 K/W Data Book 1 03.00 CGY 93 RF IN VG1 VG2 8 2 7 CGY 93 12, 13, RF OUT / VD2 14, 15 4 VD1 17 GND Backside EHT08856 Figure 1 Functional Block Diagram Pin Out Pin # Name Configuration 1 NC – 2 VG2 Gate voltage stage 2 3 NC – 4 VD1 Drain Voltage stage 1 5 NC – 6 NC – 7 RFin RF input 8 VG1 Gate Voltage stage 1 9 NC – 10 NC – 11 NC – 12,13,14,15 VD2/RFout Drain voltage stage 2/RF output 16 NC – (17) GND Ground (backside of MW-16 housing) Data Book 2 03.00 CGY 93 Electrical Characteristics TA = 25 °C, pulsed with a duty cycle of 12.5%, ton = 577 µs adjust VG1 = VG2 for ID0 = 1.6 A (ID0: drain current without RF) Parameters Frequency range Symbol f Supply current without RF ID0 Limit Values Unit Test Conditions min. typ. max. 880 – 915 MHz – – 1.6 – A – Supply current with RF IDHF – 1.2 – A Pin = 12 dBm Small signal gain G – 33.0 – dB VD = 2.8 V, Pin = – 10 dBm Power gain GP – 20.5 – dB VD = 2.8 V, Pin = 12 dBm Output Power Pout 32.1 32.5 – dBm VD = 2.8 V, Pin = 12 dBm Output Power Pout 34.0 34.5 – dBm VD = 3.5 V, Pin = 12 dBm Output Power Pout 35.8 36.3 – dBm VD = 4.8 V, Pin = 12 dBm Overall Power added Efficiency η 47 53 – % VD = 2.8 V, Pin = 12 dBm Overall Power added Efficiency η 50 55 – % VD = 3.5 V or VD = 4.8 V, Pin = 12 dBm Noise Power in RX (935 - 960 MHz) NRX – – 80 – dBm Pin = 12 dBm, Pout = 32.5 dBm, 100 kHz RBW Harmonics H (2 f0) H (3 f0)) 40 40 43 43 Stability all spurious outputs < – 60 dBc, VSWR load, all phase angles – – 10 : 1 – Input VSWR – – 2:1 Data Book 3 – – dBc VD = 2.8 V, Pin = 10 dBm, Pout = 32.5 dBm – – 2.2 : 1 – VD = 2.8 V 03.00 CGY 93 CGY 93, @ 2.8 V, f = 900 MHz VG = – 2.1 V, pulsed with a duty cycle of 12.5%, ton = 0.577 ms 36 dBm POUT 34 33 32 POUT 31 30 PAE 29 28 27 26 25 24 23 22 21 20 -5 -3 -1 1 3 5 7 EHT08857 CGY 93, @ 4.8 V, f = 900 MHz VG = – 2.1 V, pulsed with a duty cycle of 12.5%, ton = 0.577 ms 80 % 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 9 11 dBm 15 EHT08859 38 dBm POUT PAE POUT 36 55 34 50 PAE 33 POUT 34 33 POUT 32 31 30 29 PAE 28 27 26 25 24 23 22 21 20 -5 -3 -1 1 3 5 7 40 31 35 30 30 29 25 28 20 27 15 26 10 25 5 0 2 4 6 8 10 0 12 dBm 15 PIN CGY 93 – Pout vs. Drain Voltage @ 900 MHz, Pin = 12 dBm 38 dBm POUT 37 80 % 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 9 11 dBm15 PAE EHT08860 36 35 34 33 32 31 30 2.5 2.9 3.3 3.7 4.1 4.5 4.9 PIN Data Book 45 32 24 CGY 93, @ 3.5 V, f = 900 MHz VG = – 2.1 V, pulsed with a duty cycle of 12.5%, ton = 0.577 ms EHT08858 PAE 60 35 PIN 36 dBm 70 % V 5.5 VD 4 03.00 CGY 93 GSM Application Board CGY 93 VG1 VG2 VD2 Test Board CGY 93 4.7 µF 100 Ω 100 Ω 1 nF VG1 VG2 CGY 93 12 nH RF OUT / VD2 RF IN RF IN 6.8 pF 5.6 pF RF OUT 10 pF VD1 1.8 pF GND 1 nF VD1 50 Ω Transmission Line EHT08862 Figure 2 VG2 VD2 GND 100 Ω 4.7 µF GSM POWER AMPLIFIER 1 nF VD1 CGY 93 OUT 1 nF 12 nH 1.8 pF 1 nF 5.6 pF 6.8 pF 1 nF CGY 93 10 pF IN VG1 100 Ω EHT08863 Figure 3 Data Book 5 03.00 CGY 93 Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The purpose of the following procedure is to prevent the junction temperature TJ from exceeding the maximum allowed data sheet value. TJ is determined by the dissipated power and the thermal properties of the device and board. The dissipated power is the power which remains in the chip and heats the device and junction. It does not contain RF signals which are coupled out consistently. This is a two step approach: For a pulsed condition both steps are needed. For CW and DC step one is sufficient. Step 1: Continuous Wave DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the case TC first. Because the MW-16 heat sink is not easily accessible to a temperature measurement the thermal resistance is defined as RthJC using the case temperature TC. There are two cases: • When RthCA (case to ambient) is not known: Measure TC in operation of device and board at the upper side of the case where the temperature is highest. Small thermoelements (< 1 mm, thin wires, thermopaste) or thermopapers with low heat dissipation are well suited. Thermoelement for TCASE Case (C) Junction (J) Soldered Heatsink PCB Ambient (A) EHT08701 Figure 4 Data Book Measurement of Case Temperature TC 6 03.00 CGY 93 • When RthCA is already known. Calculate the case temperature as TC = Pdiss × RthCA + TA Graph for Ptot-DC Ptot-DC in mW EHT08865 10000 mW Ptot DC 8000 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 120 ˚C 160 TC Step 2: Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC × Pulse Factor = Ptot-DC × (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the Pulse Factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Book 7 03.00 CGY 93 Pulse Factor Ptot-max/Ptot-DC = f(t_p) EHT08866 10 tp Ptot max Ptot DC tp D= T T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = “Pulse peak power” = 17 W Reliability Considerations The above procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which correspond to the maximum allowed junction temperature. For best reliability keep the junction temperature low. The following formula allows to track the individual contributions which determine the junction temperature. TJ = (Ptot-diss/Pulse Factor × Junction temperature (= channel temperature) Power dissipated in the chip, Rth of device divided by the applicable from junction pulse factor (= 1 for DC and to case CW). It does not contain decoupled RF- power Data Book 8 RthJC) + TC Temperature of the case, measured or calculated, device and board operating 03.00 CGY 93 Package Outlines MW-16 (Special Package) 1.6 max 7 1) 0.1 max 0.2 7 x 0.8 = 5.6 1.4 ±0.1 D M A-B D C 0.35±0.05 2) B 7 9 1) C 4x 0.2 A-B D H 16x 0.2 D +0.05 0.15 -0. 06 C 0˚...7˚ 16x 0.1 C A 0.8 Exposed solderable heatsink ø4.57 ±0.05 GPW05969 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Data Book 9 Dimensions in mm 03.00