CGY 50 GaAs MMIC ________________________________________________________________________________________________________ Datasheet * Single-stage monolithic microwave IC ( MMICamplifier ) * Cascadable 50 Ω gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz * Gain control dynamic range 20 dB ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Circuit diagram Pin Configuration CGY 50 G2 Q68000-A8370 2 OUT/D Package 1) SOT-143 4 IN/G typ. 4kΩ 1, 3 S Maximum ratings Symbol Value Unit VD VDP 5.5 V 7.5 V VG -3 ... 0 V VDG PIN 7.5 V 16 dBm Channel temperature TCh 150 °C Storage temperature range Tstg -40...+150 °C Total power dissipation (TS < 82°C) 3) Ptot 400 mW RthChS <170 K/W Drain-voltage Peak drain-voltage Current control gate voltage Drain-gate voltage Input power 2) Thermal resistance Channel-soldering point 3) Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper ground connection of leads 1 and 3 ( with minimum inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate tuning. 1) Dimensions see chapter Package Outlines 2) See application circuit. 3) TS is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/5 11.01.1996 HL EH PD 21 CGY 50 GaAs MMIC ________________________________________________________________________________________________________ Electrical characteristics TA = 25 °C, VG = 0 V, RS = RL = 50 Ω, unless otherwise specified VD = 4.5 V, ( for application circuit see next page ) Characteristics Symbol min typ max Unit Drain current ID - 60 75 mA Power gain G 7.5 10.0 8.5 - f = 200 MHz f = 1800 MHz Gain flatness ∆G f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure 2 dB - 3.0 4.0 RLIN dB 9.5 12 - RLOUT dB 9.5 f = 200 to 1800 MHz Third order intercept point 0.4 1.1 F f = 200 to 1800 MHz Output return loss dB - f = 200 to 1800 MHz Input return loss dB 12 - IP3 dBm Two tone intermodulation test 29 f1 = 806 MHz, f2 = 810 MHz 31 - P = 10 dBm ( both carriers ) 0 1dB gain compression P1 dB f = 200 to 1800 MHz Gain control dynamic range - 16 - - 20 - ∆G f = 200 to 1800 MHz Siemens Aktiengesellschaft dBm pg. 2/5 dB 11.01.1996 HL EH PD 21 CGY 50 GaAs MMIC ________________________________________________________________________________________________________ Application Circuit ( f = 800 to 1800 MHz ) V D V G C 3 D L Input C1 1 C L 1 3 CGY50 50Ohm 2 C 4 4 2 2 1 Output 50Ohm 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 , L2 D1 Chip capacitors 100 pF Chip capacitors 1 nF Discrete inductor 1 µH or printed microstrip inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) Note: Operating conditions for PIN, max : RG = RL = 50 Ω, C1, max = 220 pF, VD = 4.5 V, VG current limited < 2 mA. Siemens Aktiengesellschaft pg. 3/5 11.01.1996 HL EH PD 21 CGY 50 GaAs MMIC ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 TS 300 TA 200 100 0 Siemens Aktiengesellschaft 0 50 pg. 4/5 100 TA ; TS [ °C ] 11.01.1996 HL EH PD 21 CGY 50 GaAs MMIC ________________________________________________________________________________________________________ Typical Common Source S-Parameters VG = 0V f GHz S11 Mag Z0 = 50 Ω VD = 4.5 V S21 Ang Mag S12 Ang Mag S22 Ang Mag Ang 0.2 0.25 -31 3.30 164 0.14 5.0 0.05 -144 0.4 0.27 -34 3.20 158 0.14 0.0 0.05 -133 0.6 0.21 -44 3.17 150 0.13 -2.0 0.08 105 0.8 0.20 -54 3.09 142 0.13 -3.0 0.10 91 1.0 0.19 -65 3.00 134 0.13 -4.0 0.12 81 1.2 0.18 -77 2.90 126 0.13 -5.0 0.14 74 1.4 0.18 -93 2.81 118 0.13 -5.0 0.16 68 1.6 0.17 -103 2.70 111 0.13 -6.0 0.17 62 1.8 0.17 -119 2.60 103 0.13 -5.0 0.18 56 2.0 0.17 -130 2.50 96 0.12 -5.0 0.19 51 2.2 0.18 -141 2.42 94 0.12 -4.0 0.20 46 2.4 0.18 -152 2.33 83 0.12 -4.0 0.21 42 2.6 0.19 -163 2.24 77 0.12 -3.0 0.21 39 2.8 0.20 -172 2.16 71 0.13 -3.0 0.21 36 3.0 0.21 179 2.07 65 0.13 -2.0 0.21 33 3.2 0.22 172 2.01 60 0.13 -2.0 0.21 30 3.4 0.23 162 1.94 54 0.13 -2.0 0.21 29 3.6 0.24 153 1.87 49 0.14 -1.0 0.21 28 3.8 0.26 148 1.81 43 0.14 -1.0 0.21 27 4.0 0.28 142 1.75 38 0.15 -1.0 0.20 27 Siemens Aktiengesellschaft pg. 5/5 11.01.1996 HL EH PD 21