MG400Q2YS60A MITSUBISHI IGBT Module MG400Q2YS60A High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance. • VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2004-10-01 1/8 MG400Q2YS60A Package Dimensions 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 2.54 7 2.54 Signal Terminal Layout 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 Weight: 375 g 2004-10-01 2/8 MG400Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 400 1 ms ICP 800 DC IF 400 1 ms IFM 800 Collector power dissipation (Tc = 25°C) PC 3750 W Control voltage (OT) VD 20 V Collector current Inverter Forward current Control A Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg −40~125 °C Operation temperature range Tope −20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ⎯ 3 (M5) N･m Junction temperature Module A Screw torque Electrical Characteristics (Tj = 25°C) 1. Inverter stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ +3/−4 mA VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA ICES VCE = 1200 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (off) VCE = 5 V, IC = 400 mA V IGES VCE (sat) Cies Turn-on delay time Switching time Symbol Turn-off time Fall time td (on) toff tf Reverse recovery time trr Forward voltage VF Test Condition VGE = 15 V, IC = 400 A 6.0 7.0 8.0 Tj = 25°C ⎯ 2.4 2.8 Tj = 125°C ⎯ ⎯ 3.2 ⎯ 31000 ⎯ 0.10 ⎯ 1.00 ⎯ ⎯ 2.00 ⎯ ⎯ 0.50 VCE = 10 V, VGE = 0, f = 1 MHz VCC = 600 V, IC = 400 A VGE = ±15 V, RG = 5.1 Ω (Note 1) (See page 4) IF = 400 A V pF µs ⎯ ⎯ 0.50 ⎯ 2.4 2.8 V Min Typ. Max Unit Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ⎯ VCC = 600 V, VGE = ±15 V 480 ⎯ ⎯ A 100 ⎯ 125 °C ⎯ ⎯ 8 µs 2004-10-01 3/8 MG400Q2YS60A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ⎯ ⎯ 0.033 Inverter FRD stage ⎯ ⎯ 0.068 With silicon compound ⎯ 0.013 ⎯ Unit °C/W °C/W Switching Time Test Circuit RG IF −VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% td (on) 10% td (off) tf 2004-10-01 4/8 MG400Q2YS60A Remark <Short circuit capability condition > Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal. • VCC < = 750 V • 14.8 V < = VGE < = 17.0 V • RG > Ω 5.1 = • Tj < = 125°C <Gate voltage > To use this product, VGE must be provided higher than 14.8 V In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. <Recommended conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage VCC ⎯ 600 750 V Gate voltage VGE 14.8 15 17 V Gate resistance RG 5.1 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz <For parallel use> For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat) VF Min Max 24 E 2.1 2.4 26 F 2.3 2.6 28 G 2.5 2.8 2004-10-01 5/8 MG400Q2YS60A IC – VCE IC – VCE 800 800 15 V Tj = 125°C VGE = 20 V IC (A) VGE = 20 V 600 15 V 400 Collector current Collector current IC (A) Tj = 25°C Common emitter 12 V Common emitter 10 V 200 12 V 600 10 V 400 9V 200 9V 8V 8V 0 0 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 (V) 1 2 Collector-emitter voltage VCE – VGE VCE 5 (V) 12 Common emitter Common emitter (V) Tj = 25°C Tj = 125°C 10 VCE 10 VCE (V) 4 VCE – VGE 12 8 Collector-emitter voltage 8 Collector-emitter voltage 3 6 IC = 800 A 4 400 A 2 6 IC = 800 A 4 400 A 2 200 A 200 A 0 0 5 10 Gate-emitter voltage 15 VGE 0 0 20 (V) 5 10 15 Gate-emitter voltage VCE – VGE VGE 20 (V) IC – VGE 12 800 Common emitter Tj = −40°C VCE = 5 V IC (A) 10 VCE (V) Common emitter Collector current Collector-emitter voltage 8 6 IC = 800 A 4 400 A 600 400 25°C 200 Tj = 125°C 2 −40°C 200 A 0 0 5 10 Gate-emitter voltage 15 VGE (V) 20 0 0 4 8 Gate-emitter voltage 12 VGE (V) 2004-10-01 6/8 MG400Q2YS60A IF – VF VCE, VGE – QG 800 1000 20 400 Tj = 125°C −40°C 200 25°C 0 0 1 2 3 Forward voltage 4 800 16 400 V 600 200 V 400 8 VCC = 0 V 4 200 0 0 5 12 600 V 1000 VF (V) SW time – RG 0 3000 2000 Charge QG Gate-emitter voltage (V) VCE Collector-emitter voltage Forward current IF (A) VGE = 0 V 600 RL = 1.5 Ω Tj = 25°C VGE (V) Common emitter Common cathode (nC) Eon, Eoff – RG 10000 1000 Common emitter VCC = 600 V (mJ) IC = 400 A VGE = ±15 V Tj = 25°C Tj = 125°C Eon , Eoff 1000 td (off) ton td (on) tr 100 tf Common emitter VCC = 600 V IC = 400 A VGE = ±15 V 10 0 5 10 Gate resistance Tj = 25°C Tj = 125°C 15 RG 100 Eoff SW loss SW time (ns) toff Eon 10 0 20 5 (Ω) 10 Gate resistance SW time – IC 15 RG 20 (Ω) Eon, Eoff – IC 10000 100 (mJ) toff Eoff 100 td (on) Common emitter VCC = 600 V tr 10 0 Eon, Eoff tf ton RG = 5.1 Ω VGE = ±15 V 100 200 10 Eon SW loss SW time (ns) td (off) 1000 Tj = 25°C Tj = 125°C 300 Collector current IC (A) 400 Common emitter VCC = 600 V 1 0 100 RG = 5.1 Ω Tj = 25°C VGE = ±15 V Tj = 125°C 200 300 400 Collector current IC (A) 2004-10-01 7/8 MG400Q2YS60A Irr, trr – IF Edsw – IF 1000 100 Edsw (mJ) Reverse recovery loss Reverse recovery time trr (ns) Reverse recovery current Irr (A) Common cathode trr 100 Irr Common cathode VCC = 600 V 10 0 100 RG = 5.1 Ω Tj = 25°C VGE = ±15 V Tj = 125°C 200 300 Forward current VCC = 600 V RG = 5.1 Ω VGE = ±15 V 10 1 0 400 100 IF (A) 200 300 Forward current C – VCE 400 IF (A) Safe-operating area 100000 1000 IC max (pulsed)* (pF) IC (A) Cies Collector current C 10000 Capacitance Tj = 25°C Tj = 125°C Coes 1000 Common emitter Cres VGE = 0 V f = 1 MHz Tj = 25°C 100 0.01 0.1 1 10 Collector-emitter voltage VCE 100 IC max (continuous) 50 µs∗ 100 µs∗ 100 *: Single nonrepetitive 10 pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 1 10 (V) 1 ms∗ 100 1000 Collector-emitter voltage VCE 10000 (V) Reverse bias SOA Rth – tw 800 TC = 25°C 600 Rth (j-c) (°C/W) Collector current IC (A) 1 400 200 Diode stage 0.1 Transistor stage 0.01 Tj < = 125°C RG = 5.1 Ω 0 0 VGE = ±15 V 400 800 Collector-emitter voltage 1200 VCE (V) 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 8/8