MG400J2YS61A MITSUBISHI IGBT Module MG400J2YS61A(600V/400A 2in1) High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • VCE (sat) = 1.9 V (typ.) Equivalent Circuit C1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2004-10-01 1/13 MG400J2YS61A Package Dimensions 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 7 2.54 Signal Terminal Layout 2.54 Weight: 375 g 2004-10-01 2/13 MG400J2YS61A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 400 1 ms ICP 800 DC IF 400 1 ms IFM 800 Collector power dissipation (Tc = 25°C) PC 2160 W Control voltage (OT) VD 20 V Collector current Inverter Forward current Control A Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg −40~125 °C Operation temperature range Tope −20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ⎯ 3 (M5) N·m Junction temperature Module A Screw torque Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance IGES ICES VGE (off) VCE (sat) Cies Turn-on delay time Switching time Symbol Turn-off time Fall time Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ +3/−4 mA VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VCE = 5 V, IC = 400 mA V VGE = 15 V, IC = 400 A 6.0 7.0 8.0 Tj = 25°C ⎯ 1.9 2.2 Tj = 125°C ⎯ ⎯ 2.5 ⎯ 85 ⎯ 0.10 ⎯ 1.00 ⎯ ⎯ 2.00 ⎯ ⎯ 0.25 VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 300 V, IC = 400 A VGE = ±15 V, RG = 7.5 Ω (Note 1) IF = 400 A V nF µs ⎯ ⎯ 0.50 ⎯ 1.8 2.2 V Min Typ. Max Unit Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ⎯ VCC = 300 V, VGE = ±15 V 480 ⎯ ⎯ A 100 ⎯ 125 °C ⎯ ⎯ 6.5 µs 2004-10-01 3/13 MG400J2YS61A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ⎯ ⎯ 0.057 Inverter FRD stage ⎯ ⎯ 0.068 With silicon compound ⎯ 0.013 ⎯ Unit °C/W °C/W Switching Time Test Circuit RG IF −VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% td (on) 10% td (off) tf 2004-10-01 4/13 MG400J2YS61A Remark <Short circuit capability condition> • Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal. • VCC < = 375 V • 13.8 V < = VGE < = 16.0 V • RG > Ω 7.5 = • Tj < = 125°C <Gate voltage> • To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions. <Recommneded conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage VCC ⎯ 300 375 V Gate voltage VGE 13.8 15 16 V Gate resistance RG 7.5 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz 2004-10-01 5/13 MG400J2YS61A IC – VCE 400 Common emitter Tj = 25°C 15 V VGE = 20 V 300 Collector current IC (A) 12 V 10 V 9V 200 100 8V 0 0 1 2 3 Collector-emitter voltage 4 5 4 5 VCE (V) IC – VCE 400 Common emitter 10 V Tj = 125°C 9V 15 V VGE = 20 V Collector current IC (A) 300 12 V 200 8V 100 0 0 1 2 Collector-emitter voltage 3 VCE (V) 2004-10-01 6/13 MG400J2YS61A VCE – VGE Collector-emitter voltage VCE (V) 12 Common emitter 10 Tj = 25°C 8 6 400 A 4 600 A 2 IC = 200 A 0 0 4 8 12 Gate-emitter voltage VGE 16 20 (V) VCE – VGE Collector-emitter voltage VCE (V) 12 Common emitter 10 Tj = 125°C 8 6 4 400 A 600 A 2 IC = 200 A 0 0 4 8 12 Gate-emitter voltage VGE 16 20 (V) VCE – VGE Collector-emitter voltage VCE (V) 12 Common emitter 10 Tj = 40°C 8 6 4 400 A 600 A 2 IC = 200 A 0 0 4 8 12 Gate-emitter voltage VGE 16 20 (V) 2004-10-01 7/13 MG400J2YS61A IC – VGE 600 Common emitter Collector current IC (A) VCE = 5 V 400 −40°C 200 125°C Tj = 25°C 0 0 4 8 12 Gate-emitter voltage VGE 16 (V) IF – V F 400 Common cathode 300 Forward current IF (A) Tj = 125°C 200 Tj = 25°C 100 0 0.0 0.5 1.0 1.5 Forward voltage VF 2.0 2.5 (V) 2004-10-01 8/13 MG400J2YS61A Switching time – RG 10 5 3 Common emitter VCC = 300 V IC = 150 A VGE = ± 15 V Tj = 25°C Tj = 125°C toff td (off) ton td (on) Switching time (µs) 1 tr 0.5 0.3 tf 0.1 0.05 0.03 0.01 0 5 10 Gate resistance 15 20 25 RG (Ω) Switching time – IC 10 5 3 Common emitter VCC = 300 V RG = 7.5 Ω VGE = ± 15 V Tj = 25°C Tj = 125°C toff td (off) Switching time (µs) 1 ton 0.5 td (on) 0.3 tr 0.1 tf 0.05 0.03 0.01 0 100 200 300 400 500 Collector current IC (A) 2004-10-01 9/13 MG400J2YS61A Switching loss – RG 500 Switching loss (mJ) 300 Common emitter VCC = 300 V IC = 150 A VGE = ±15 V Tj = 25°C Tj = 125°C 100 Eon 50 Eoff 30 10 0 5 10 Gate resistance 15 20 25 RG (Ω) Switching loss – IC 100 50 Common emitter VCC = 300 V RG = 7.5 Ω VGE = ±15 V Tj = 25°C Tj = 125°C Eon 30 Switching loss (mJ) Eoff 10 5 3 1 0 100 200 300 400 500 Collector current IC (A) 2004-10-01 10/13 MG400J2YS61A trr, Irr – IF 1000 Reverse recovery time trr (ns) Peak reverse recovery current Irr (A) 500 Common emitter VCC = 300 V RG = 7.5 Ω VGE = ± 15 V Tj = 25°C Tj = 125°C trr 300 Irr 100 50 30 10 0 100 200 300 Forward current 400 500 400 500 IF (A) Edsw – IF 10 Tj = 25°C Tj = 125°C 3 Reverse recovery loss Edsw (mJ) 5 Common emitter VCC = 300 V RG = 7.5 Ω VGE = ± 15 V 1 0.5 0.3 0.1 0 100 200 Forward current 300 IF (A) 2004-10-01 11/13 MG400J2YS61A QG 500 20 Common emitter RL = 0.75 Ω 300 12 200 8 100 4 Collector emitter voltage VCE (V) 16 0 0 100 200 Charge 300 Gate-emitter voltage VGE (V) Tj = 25°C 400 0 400 QG (nC) C – VCE 300000 Cies 100000 50000 Capacitance C (pF) 30000 10000 5000 Coes 3000 Cres 1000 500 300 VGE = 0 V f = 1 MHz Tc = 25°C 100 0 0.1 1 Collector-emitter voltage 10 100 VCE (V) 2004-10-01 12/13 MG400J2YS61A Reverse bias SOA 1000 Collector current IC (A) 800 600 400 200 0 0 200 400 600 Collector-emitter voltage 800 (V) Rth – tw 1 Tc = 25°C 0.5 0.3 Rth (j-c) (°C/W) 0.1 Diode stage 0.05 Transistor stage 0.03 0.01 0.005 0.003 0.001 0.001 0.01 0.1 Pulse width 1 10 tw (s) 2004-10-01 13/13