MG200Q2YS60A MITSUBISHI IGBT Module MG200Q2YS60A(1200V/200A 2in1) High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2004-10-01 1/8 MG200Q2YS60A Package Dimensions 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 7 2.54 Signal Terminal Layout 2.54 Weight: 375 g 2004-10-01 2/8 MG200Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 200 1 ms ICP 400 DC IF 200 1 ms IFM 400 Collector power dissipation (Tc = 25°C) PC 2000 W Control voltage (OT) VD 20 V Collector current Inverter Forward current Control A Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg −40~125 °C Operation temperature range Tope −20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ⎯ 3 (M5) N･m Junction temperature Module A Screw torque Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ +3/−4 mA VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA ICES VCE = 1200 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (off) VCE = 5 V, IC = 200 mA V IGES VCE (sat) Cies Turn-on delay time Switching time Symbol Turn-off time Fall time Test Condition VGE = 15 V, IC = 200 A 6.0 7.0 8.0 Tj = 25°C ⎯ 2.4 2.8 Tj = 125°C ⎯ ⎯ 3.2 ⎯ 15000 ⎯ 0.10 ⎯ 1.00 ⎯ ⎯ 2.00 ⎯ ⎯ 0.50 VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 600 V, IC = 200 A VGE = ±15 V, RG = 10 Ω (Note 1) IF = 200 A V pF µs ⎯ ⎯ 0.50 ⎯ 2.4 2.8 V Min Typ. Max Unit Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ⎯ VCC = 600 V, VGE = ±15 V 240 ⎯ ⎯ A 100 ⎯ 125 °C ⎯ ⎯ 8 µs 2004-10-01 3/8 MG200Q2YS60A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ⎯ ⎯ 0.062 Inverter FRD stage ⎯ ⎯ 0.136 With silicon compound ⎯ 0.013 ⎯ Unit °C/W °C/W Switching Time Test Circuit RG IF −VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% td (on) 10% td (off) tf 2004-10-01 4/8 MG200Q2YS60A Remark <Short circuit capability condition> Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal. • VCC < = 750 V • 14.8 V < = VGE < = 17.0 V • RG > Ω 10 = • Tj < = 125°C <Gate voltage> To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. <Recommended conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage VCC ⎯ 600 750 V Gate voltage VGE 14.8 15 17 V Gate resistance RG 10 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz 2004-10-01 5/8 MG200Q2YS60A IC – VCE IC – VCE 400 400 Common emitter VGE = 20 V 12 V 12 V 300 IC (A) Tj = 125°C 15 V Collector current IC (A) Collector current VGE = 20 V Common emitter Tj = 25°C 10 V 200 100 9V 15 V 300 10 V 200 9V 100 8V 8V 0 0 1 2 3 4 Collector-emitter voltage VCE 0 0 5 (V) 1 2 VCE – VGE VCE 5 (V) VCE – VGE 12 Common emitter Common emitter (V) Tj = 25°C Tj = 125°C 10 VCE 10 VCE (V) 4 Collector-emitter voltage 12 8 Collector-emitter voltage 8 Collector-emitter voltage 3 6 4 IC = 400 A 200 A 2 100 A 0 0 5 10 15 Gate-emitter voltage VGE 6 IC = 400 A 4 200 A 2 100 A 0 0 20 5 (V) 10 15 Gate-emitter voltage VCE – VGE VGE 20 (V) IC – VGE 400 12 Common emitter Tj = −40°C VCE = 5 V IC (A) 10 VCE (V) Common emitter Collector current Collector-emitter voltage 8 6 200 A 4 IC = 400 A 300 200 Tj = 125°C 100 25°C 2 −40°C 100 A 0 0 5 10 Gate-emitter voltage 15 VGE (V) 20 0 0 2 4 6 Gate-emitter voltage 8 10 VGE 12 (V) 2004-10-01 6/8 MG200Q2YS60A IF – VF VCE, VGE – QG 400 1000 20 Collector-emitter voltage Forward current IF Tj = 25°C 200 125°C 100 −40°C 0 0 1 2 3 Forward voltage 4 800 16 600 400 200 V 8 VCE = 0 V 4 200 0 0 5 500 VF (V) 1000 Charge SW time – RG 10000 12 400 V 600 V 0 2000 1500 QG Gate-emitter voltage (V) VCE (A) VGE = 0 V 300 RL = 3 Ω Tj = 25°C VGE (V) Common emitter Common cathode (nC) Eon, Eoff – RG 100 VCC = 600 V IC = 200 A VGE = ±15 V (mJ) Eoff Eon , Eoff ton td (off) tf Eon 10 td (on) SW loss SW time (ns) toff 1000 100 tr Common emitter VCC = 600 V IC = 200 A VGE = ±15 V 10 0 5 10 15 Gate resistance RG 20 1 0 25 (Ω) 5 Tj = 25°C Tj = 125°C 10 15 Gate resistance SW time – IC RG 20 25 (Ω) Eon, Eoff – IC 10000 100 Eoff Eon, Eoff 1000 td (off) ton 100 tf td (on) Common emitter VCC = 600 V tr 10 0 100 Eon Common emitter VCC = 600 V RG = 10 Ω VGE = ±15 V 50 10 SW loss SW time (ns) (mJ) toff Tj = 25°C Tj = 125°C 150 Collector current IC (A) 200 RG = 10 Ω VGE = ±15 V 1 0 50 100 Tj = 25°C Tj = 125°C 150 200 Collector current IC (A) 2004-10-01 7/8 MG200Q2YS60A Irr, trr – IF Edsw – IF Edsw (mJ) 100 trr 100 Irr Common emitter VCC = 600 V RG = 10 Ω VGE = ±15 V 10 0 50 Tj = 25°C Tj = 125°C 100 150 Forward current Reverse recovery loss Reverse recovery time trr (ns) Reverse recovery current Irr (A) 1000 10 1 Common cathode VCC = 600 V RG = 10 Ω VGE = ±15 V 0.1 0 200 50 IF (A) 100 150 Forward current C – VCE Tj = 25°C Tj = 125°C 200 IF (A) Safe-operating area 100000 1000 IC (A) IC max (pulsed)* (pF) Cies Collector current Capacitance C 10000 Coes 1000 Common emitter VGE = 0 V Cres f = 1 MHz IC max (continuous) 100 10 Tj = 25°C 100 0.01 0.1 1 10 Collector-emitter voltage VCE *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 1 100 50 µs∗ 1 ms∗ 10 (V) 100 µs∗ 100 1000 Collector-emitter voltage VCE 10000 (V) Reverse bias SOA 1000 Rth – tw TC = 25°C 100 Diode stage Rth (j-c) (°C/W) Collector current IC (A) 1 10 0.1 Transistor stage 0.01 Tj < = 125°C RG = 10 Ω VGE = ±15 V 1 0 400 800 Collector-emitter voltage 1200 VCE (V) 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 8/8