MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications · High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC ― JEITA ― TOSHIBA 2-95A4A Weight: 255 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 100 1 ms ICP 200 DC IF 100 1 ms IFM 200 PC 690 W Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature A A Tj 150 °C Storage temperature range Tstg -40 to 125 °C Isolation voltage VIsol 2500 (AC 1 minute) V Terminal ¾ 3 Mounting ¾ 3 Screw torque 1 N▪m 2002-10-04 MG100Q2YS65H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ¾ ¾ 2.0 mA Gate-emitter cut-off voltage VGE (off) IC = 100 mA, VCE = 5 V 4.0 ¾ 7.0 V Collector-emitter saturation voltage VCE (sat) IC = 100 A, VGE = 15 V Tc = 25°C ¾ 3.0 4.0 Tc = 125°C ¾ 3.6 ¾ ¾ 8500 ¾ ¾ 0.05 ¾ ¾ 0.05 ¾ ¾ 0.10 ¾ ¾ 0.55 ¾ tf ¾ 0.05 0.15 toff ¾ 0.60 ¾ Input capacitance Turn-on delay time td (on) Rise time Switching time VCE = 10 V, VGE = 0, f = 1 MHz Cies tr Turn-on time Inductive load VCC = 600 V, IC = 100 A VGE = ±15 V, RG = 9.1 W ton Turn-off delay time td (off) Fall time Turn-off time V pF ms Forward voltage VF IF = 100 A, VGE = 0 ¾ 2.4 3.5 V Reverse recovery time trr IF = 100 A, VGE = -10 V, di/dt = 700 A/ms ¾ 0.1 ¾ ms Transistor stage ¾ ¾ 0.18 Diode stage ¾ ¾ 0.41 Inductive load VCC = 600 V, IC = 100 A VGE = ±15 V, RG = 9.1 W Tc = 125°C ¾ 10 ¾ ¾ 8 ¾ Thermal resistance Rth (j-c) Turn-on Eon Turn-off Eoff Switching loss °C/W mJ Note: Switching time measurement circuit and input/output waveforms RG VGE IF 90% 10% 0 -VGE IC VCC L trr IC RG 90% 90% VCE 0 10% tf td (off) toff 2 10% td (on) tr ton 2002-10-04 MG100Q2YS65H IC – VCE (sat) IC – VCE (sat) 200 200 15 V 20 V 20 V (A) 18 V Collector current Collector current 100 PC = 690 W 50 0 0 VGE = 8 V Common emitter Tc = 25°C 2 4 6 8 Collector-emitter voltage VCE 100 50 0 0 10 (V) VGE = 8 V Common emitter Tc = 125°C 2 4 VCE – VGE (V) VCE Collector-emitter voltage (V) VCE Collector-emitter voltage 8 6 IC = 200 A 4 100 A 2 50 A 4 8 12 16 Gate-emitter voltage VGE (V) Common emitter Tc = 125°C 10 8 6 100 A 4 50 A 2 0 0 20 IC = 200 A 4 8 12 16 Gate-emitter voltage VGE (V) IC – VGE 20 (V) IF – VF 200 Common emitter VCE = 5 V Common cathode VGE = 0 (A) -40°C 150 100 Forward current IF IC (A) VCE 10 VCE – VGE 10 200 8 12 Common emitter Tc = 25°C 0 0 6 Collector-emitter voltage 12 Collector current 10 V 15 V 150 IC 10 V IC (A) 12 V 150 12 V 18 V Tc = 125°C -40°C 25°C 50 150 100 Tc = 25°C 50 125°C 0 0 4 8 Gate-emitter voltage VGE 12 0 0 16 (V) 1 2 Forward voltage 3 3 VF 4 5 (V) 2002-10-04 MG100Q2YS65H Switching time – IC Common emitter VCC = 600 V VGE = ±15 V RG = 9.1 W Switching time – IC 1 ton Switching time Switching time td (off) (ms) : Tc = 25°C : Tc = 125°C (ms) 1 0.1 tr toff 0.1 Common emitter 0.01 10 30 Collector current tf VCC = 600 V VGE = ±15 V RG = 9.1 W td (on) 0.01 10 100 IC : Tc = 25°C : Tc = 125°C 30 (A) Collector current Switching time – RG 1 IC (A) Switching time – RG 10 : Tc = 25°C : Tc = 125°C (ms) (ms) ton td (on) Switching time Switching time 100 tr 0.1 1 Common emitter VCC = 600 V IC = 100 A VGE = ±15 V : Tc = 25°C : Tc = 125°C toff td (off) 0.1 Common emitter VCC = 600 V IC = 100 A VGE = ±15 V 0.01 0 10 20 30 40 Gate resistance RG 50 tf 0.01 0 60 (9) Eoff 1 10 Collector current 60 (9) Eoff 10 1 1 100 IC 50 Eon Edsw 0.1 1 40 Common emitter VCC = 600 V IC = 100 A VGE = ±15 V (mJ) Eon Switching loss (mJ) Switching loss 10 30 Switching loss – RG 100 Common emitter VCC = 600 V VGE = ±15 V RG = 9.1 W : Tc = 25°C : Tc = 125°C 20 Gate resistance RG Switching loss – IC 100 10 (A) : Tc = 25°C : Tc = 125°C Edsw 10 Gate resistance RG 4 100 (9) 2002-10-04 MG100Q2YS65H VCE, VGE – QG C – VCE 1600 16 100000 Common emitter (V) 800 8 200 V 600 V 400 V 400 4 (pF) 12 VCE = 0 Capacitance C 1200 Gate-emitter voltage VGE Collector-emitter voltage VCE (V) RL = 6 W Tc = 25°C Cies 10000 Coes Cres 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0 0 200 600 400 Charge QG 800 100 0.01 1000 (nC) 0.1 1 10 Collector-emitter voltage Short circuit SOA VCE 100 (V) Reverse bias SOA 6 1000 (A) (x times) 5 3 2 VCC < = 900 V 1 100 IC Collector current Collector current 4 10 1 Tj < = 125°C VGE = ±15 V RG = 9.1 W tw = 5 ms 0 0 200 Tj < = 125°C 400 600 800 Collector-emitter voltage 1000 VCE 1200 0.1 0 1400 (V) 200 400 600 800 Collector-emitter voltage 1000 VCE 1200 1400 (V) Rth (t) – tw Transient thermal resistance Rth (t) (°C/W) 10 1 Diode stage Transistor stage 0.1 0.01 Tc = 25°C 0.001 0.01 0.001 1 0.1 Pulse width tw 10 (s) 5 2002-10-04 MG100Q2YS65H RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-10-04