MG400V2YS60A MITSUBISHI IGBT Module MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal (TH) Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2 2004-10-01 1/9 MG400V2YS60A Package Dimensions Unit: mm Weight: 680 g (typ.) 2004-10-01 2/9 MG400V2YS60A Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector−emitter voltage VCES 1700 V Gate−emitter voltage VGES ±20 V Collector current DC IC 400 A Forward current DC IF 400 A PC 4300 W Collector power dissipation (Tc = 25°C) Junction temperature Tj 150 °C Storage temperature range Tstg −40~125 °C Isolation voltage VIsol 4000 (AC 1 min) V Terminal: M8 ― 10 N·m Mounting: M5 ― 3 N·m Screw torque Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGES VGE = ±20V, VCE = 0V ― ― ±10 µA Collector cut−off current ICES VCE = 1700V, VGE = 0V ― ― 1 mA V Gate−emitter cut−off voltage Collector−emitter saturation voltage VGE(off) VCE(sat) 4.5 5.5 6.5 IC = 400A IC = 400mA, VCE = 5V Tj = 25°C ― 3.0 3.4 VGE = 15V Tj = 125°C ― 3.8 4.2 V Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz ― 45000 ― pF Gate−emitter voltage VGE ― 13 15 17 V Gate resistance RG ― 8.2 ― 15 Ω Inductive load ― 0.35 ― VCC = 900V ― 0.2 ― IC = 400A ― 0.55 ― VGE = ±15V ― 0.9 ― Turn−on delay time Rise time Switching time Turn−on time Turn−off delay time Fall time Turn−off time td(on) tr ton td(off) tf VF Reverse recovery time trr RTC operating current (Note) toff Forward voltage Thermal resistance RG = 8.2Ω Rth(j−c) Irtc ― 0.4 0.6 ― 1.3 ― IF = 400A, Tj = 25°C ― 3.2 4.2 VGE = 0V Tj = 125°C ― 2.4 ― IF = 400A, VGE = −15V di/dt = 2000A/µs ― 0.20 0.40 Transistor stage ― ― 0.029 Diode stage ― ― 0.056 800 ― ― Tj = 25°C µs V µs °C / W 2004-10-01 A 3/9 MG400V2YS60A Thermistor Characteristic Symbol Zero power resistance R25 B value R25 / 85 Test Condition MIn. Typ. Max. Unit Tc = 25°C ― 100 ― kΩ Tc = 25°C / Tc = 85°C ― 4390 ― K 2500 ― ― Vrms Tc = 25°C Isolation voltage (Note) : Switching time measurement circuit and input / output waveforms VGE RG IF −VGE IC 90% 10% 0 trr VCC L IC 90% RG VCE 10% 0 td(off) tf toff 90% 10% td(on) tr ton 2004-10-01 4/9 MG400V2YS60A IC – VCE Common 12 10 emitter Collector current IC (A) IC – VCE 800 Tj = 25°C 600 20 15 400 VGE = 8V 200 0 0 2 4 6 8 Collector-emitter voltage Common 20 emitter 9 Collector current IC (A) 800 Tj = 125°C 400 VGE = 8V 2 VCE (V) emitter Tj = 25°C Collector-emitter voltage (V) VCE Collector-emitter voltage Common 8 6 800 400 IC = 200A 4 8 6 8 10 VCE (V) VCE – VGE 10 0 0 4 Collector-emitter voltage VCE – VGE 2 9 200 VCE (V) 12 4 10 600 0 0 10 12 15 12 16 20 12 Common emitter 10 Tj = 125°C 8 800 6 400 4 2 0 0 IC = 200A 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE Collector current IC (A) 800 600 125 Tj = 25°C 400 200 Common emitter VCE = 5V 0 0 10 20 Gate-emitter voltage VGE 30 (V) 2004-10-01 5/9 MG400V2YS60A IF – VF VCE , VGE –QG Collector-emitter voltage VCE Forward current IF (A) VGE = 0 800 600 Tj = 25°C 125 400 200 0 0 1 3 2 4 20 800 600 12 900 400 8 300 500 ton tf td(on) Eoff 1000 Common emitter VCC = 900V VGE = ±15V IC = 400A : Tj = 25°C : Tj = 125°C tr 8 10 12 Gate resistance 14 RG 100 6 16 8 10 Switching Time – IC tf Switching loss (mJ) Switching time (µs) toff td(off) ton td(on) 100 10 0 Common emitter VCC = 900V VGE = ±15V RG = 8.2Ω 100 200 14 RG 16 (Ω) Switching Loss – IC 1000 tr 12 Gate resistance (Ω) 10000 1000 (nC) Eon Switching loss (mJ) Switching time (µs) : Tj = 25°C : Tj = 125°C td(off) 100 6 0 2000 1500 10000 toff 1000 QG 4 Switching Loss – RG Switching Time – RG Common emitter VCC = 900V VGE = ±15V IC = 400A Common emitter RL = 2.25Ω Tj = 25°C 1000 Charge Forward voltage VF (V) 10000 600 200 0 0 5 16 VCE = 0 VGE (V) Common cathode 1000 Gate-emitter voltage (V) 1000 Common emitter VCC = 900V VGE = ±15V RG = 8.2Ω : Tj = 25°C : Tj = 125°C Eon 100 Eoff : Tj = 25°C : Tj = 125°C 300 Collector current IC (A) 400 10 0 100 200 300 400 Collector current IC (A) 2004-10-01 6/9 MG400V2YS60A trr, Irr – IF Edsw – IF 100 Edsw (mJ) Peak reverse recovery current Irr (A) Reverse recovery time trr (ns) 1000 100 Reverse recovery loss trr Irr Common cathode di / dt = 2000A / µs VGE = −10V VCC = 900V : Tj = 25°C : Tj = 125°C 10 0 100 200 Forward crrent Common cathode di / dt = 2000A / µs VGE = −10V VCC = 900V : Tj = 25°C : Tj = 125°C 1 0 400 300 10 100 IF (A) 200 Forward crrent 1 Transient thermal resistance Rth(j-c) (°C / W) (pF) Capacitance C Cies 10000 Coes 3000 Common emiter Cres 1000 VGE = 0 F = 1MHz 300 0.1 0.1 Diode stage 0.01 Transistor stage 0.001 Tj = 25°C 0.3 1 3 10 30 0.0005 0.001 100 0.01 10 tw (s) Short Circuit tw – RG 10000 16 Pulse width tw (s) Collector current IC (A) 1 0.1 Pulse width Short Circuit Soa 1000 10 0 IF (A) Tc = 25°C Collector-emitter voltage VCE (V) 100 400 Rth(j-c) – tw C – VCE 100000 30000 300 VCC = 900V RG = 8.2Ω VGE = ±15V tw ≤ 10µs Tj ≤ 125°C 400 12 8 4 VCC = 1200V VGE =±15V Tj = 125°C 800 1200 1600 Collector-emitter voltage VCE (V) 2000 0 0 4 12 8 Gate resistance RG 16 (Ω) 2004-10-01 7/9 MG400V2YS60A Reverse Bias Soa Collector current IC (A) 1000 100 Tj ≤ 125°C 10 0 VGE = ±15V RG = 8.2Ω 400 800 1200 Collector–emitter voltage 1600 2000 VCE (V) 2004-10-01 8/9 MG400V2YS60A <VCE(sat) Rank> <VF Rank> VCE(sat) VF Rank Symbol Min. Max. Rank Symbol Min Max. 29 2.6 2.9 G 2.5 2.8 30 2.7 3.0 H 2.7 3.0 31 2.8 3.1 I 2.9 3.2 32 2.9 3.2 J 3.1 3.4 33 3.0 3.3 K 3.3 3.6 34 3.1 3.4 L 3.5 3.8 M 3.7 4.0 N 3.9 4.2 <Mark Position> MITSUBISHI MG400V2YS60A 29H30H 123456 Low side High side 2004-10-01 9/9