Dual IGBTMOD™ Compact IGBT Series Module

MG400V2YS60A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
Compact IGBT
Series Module
400 Amperes/1700 Volts
A
D
H
J
K
DETAIL "A"
C2E1
E2
C1
B E F
M
W
F
G
G
#110 TAB
(8 PLACES)
X (4 PLACES)
N
Y (3 PLACES)
U
C
Q
T
P
R
TH1
TH2
V
L
S
TH1
FO1
C1
E1
V
V
G1
TH2
L
FO2
G1
E2
FO1
G2
E1
V
V
E1/C2
DETAIL "A"
G2
FO2
E2
E2
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
7/05
Inches
4.92±0.04
3.78±0.04
0.84±0.04
4.49±0.03
3.30±0.03
0.86±0.04
1.46±0.04
0.75±0.04
0.71±0.04
0.73±0.04
0.59±0.04
3.66±0.03
Millimeters
125.0±1.0
96.0±1.0
21.3±1.0
113.0±0.8
84.0±0.8
22.0±1.0
37.0±1.0
19.0±1.0
18.0±1.0
18.6±1.0
15.0±1.0
93.0±0.8
Dimensions
Inches
Millimeters
N
0.07±0.04
1.8±1.0
P
1.24±0.04
31.5±1.0
Q
0.40±0.03
10.2±0.8
R
0.34±0.03
8.7±0.8
S
4.92±0.04
125.0±1.0
T
1.24-0.01/+0.04 31.5+2.0/-0.8
U
1.81±0.04
46.0±1.0
V
0.22±0.04
5.6±1.0
W
0.63±0.03
16.0±0.8
X
0.21 Dia.
5.5 Dia.
Y
M8 Metric
M8
Description:
Powerex Dual IGBTMOD™
Compact IGBT Series Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration, with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Over-Current and
Over-Temperature Protection
£ Low VCE(sat)
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG400V2YS60A is a
1700V (VCES), 400 Ampere
Dual IGBTMOD™ Compact IGBT
Series Module.
Type
Current Rating
Amperes
VCES
Volts (x 10)
MG
400
170
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
MG400V2YS60A
Units
Collector-Emitter Voltage
VCES
1700
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
400
Amperes
Collector Current (DC)
Forward Current (DC)
IF
400
Amperes
Collector Dissipation (TC = 25°C)
PC
4300
Watts
Power Device Junction Temperature
Tj
-20 to 150
°C
Tstg
-40 to 125
°C
Mounting Torque, M5 Mounting Screws
—
27
in-lb
Mounting Torque, M8 Main Terminal Screws
—
88
in-lb
—
680
Grams
VISO
4000
Volts
Storage Temperature
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Test Conditions
Min.
Typ.
Max.
Units
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0V
—
—
±10
µA
Collector Cutoff Current
ICES
VCE = 1700V, VGE = 0V
—
—
1.0
mA
Gate-Emitter Cutoff Voltage
VGE(off)
IC = 400mA,VCE = 5V
4.5
5.5
6.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
VGE = 15V, IC = 400A, Tj = 25°C
—
3.0
3.4
Volts
VGE = 15V, IC = 400A, Tj = 125°C
—
3.8
4.2
Volts
VCE = 10V, VGE = 0V, f = 1MHz
—
45000
—
pF
Input Capacitance
Cies
Gate-Emitter Voltage
VGE
13.0
15.0
17.0
Volts
Gate Resistance
RG
8.2
—
15.0
Ω
td(on)
—
0.35
—
µs
tr
—
0.2
—
µs
Inductive Load
Switching
Times
Forward Voltage
Reverse Recovery Time
Junction to Case Thermal Resistance
RTC Operating Current
2
Symbol
ton
VCC = 900V, IC = 400A,
—
0.55
—
µs
td(off)
VGE = ±15V, RG = 8.2Ω
—
0.9
—
µs
tf
—
0.4
0.6
µs
toff
—
1.3
—
µs
IF = 400A, VGE = 0V, Tj = 25°C
—
3.2
4.2
Volts
IF = 400A, VGE = 0V, Tj = 125°C
—
2.4
—
Volts
VF
trr
IF = 400A, VGE = -15V, di/dt = 2000A/µs
—
0.2
0.4
µs
Rth(j-c)Q
IGBT (Per 1/2 Module)
—
—
0.029
°C/Watt
Rth(j-c)D
FWDi (Per 1/2 Module)
—
—
0.056
°C/Watt
Irtc
Tj = 25°C
800
—
—
Amperes
7/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
800
10V
15V
600
9V
VGE = 20V
400
8V
200
0
2
4
6
9V
VGE = 20V
400
8V
200
0
2
4
6
8
750
500
250
0
10
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
FORWARD VOLTAGE, VF, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
8
6
IC = 800A
4
IC = 400A
2
IC = 200A
0
5
10
15
10
8
IC = 800A
6
IC = 400A
4
IC = 200A
2
0
20
0
5
10
15
400
200
0
20
VCE = 5V
Tj = 25°C
Tj = 125°C
0
5
10
15
20
25
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TURN-OFF TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-ON TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
100
200
300
COLLECTOR CURRENT, IC, (AMPERES)
400
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
SWITCHING TIME, td(off), (µs)
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
SWITCHING TIME, ton, (µs)
103
103
102
30
104
104
0
600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
104
102
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
10
5
800
12
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
12V
15V
VGE = 0V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
0
SWITCHING TIME, toff, (µs)
10V
600
0
10
8
12
7/05
1000
Tj = 125°C
12V
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25°C
FORWARD CURRENT, IF, (AMPERES)
800
0
FREE-WHEEL CHARACTERISTICS
(TYPICAL)
0
100
200
300
COLLECTOR CURRENT, IC, (AMPERES)
400
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
103
102
0
100
200
300
400
COLLECTOR CURRENT, IC, (AMPERES)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
104
103
0
100
200
300
102
400
300
101
400
200
300
TURN-OFF DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
8
10
12
14
103
102
16
6
8
10
12
14
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
103
102
16
6
8
10
12
14
GATE RESISTANCE, RG, (Ω)
GATE RESISTANCE, RG, (Ω)
GATE RESISTANCE, RG, (Ω)
TURN-ON DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
FALL TIME VS.
GATE RESISTANCE
(TYPICAL)
RISE TIME VS.
GATE RESISTANCE
(TYPICAL)
104
104
SWITCHING TIME, tf, (µs)
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
103
8
10
12
14
GATE RESISTANCE, RG, (Ω)
16
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
103
102
400
104
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
SWITCHING TIME, td(off), (µs)
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
6
100
TURN-ON TIME VS.
GATE RESISTANCE
(TYPICAL)
104
6
0
TURN-OFF TIME VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING TIME, ton, (µs)
SWITCHING TIME, toff, (µs)
SWITCHING TIME, td(on), (µs)
200
COLLECTOR CURRENT, IC, (AMPERES)
104
4
100
102
COLLECTOR CURRENT, IC, (AMPERES)
103
102
0
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
104
102
103
SWITCHING TIME, tr, (µs)
102
103
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
SWITCHING TIME, tr, (µs)
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
SWITCHING TIME, tf, (µs)
SWITCHING TIME, td(on), (µs)
104
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
6
8
10
12
14
GATE RESISTANCE, RG, (Ω)
16
16
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
103
102
6
8
10
12
14
16
GATE RESISTANCE, RG, (Ω)
7/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
103
102
100
200
300
101
400
0
100
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
10
12
14
16
0
100
200
300
100
200
300
FORWARD CURRENT, IF, (AMPERES)
400
12
14
16
102
VCC = 900V
VGE = -10V
di/dt = 2000A/µs
Tj = 25°C
Tj = 125°C
101
400
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
VCC = 900V
VGE = -10V
di/dt = 2000A/µs
Tj = 25°C
Tj = 125°C
7/05
VCC = 900V
VGE = -10V
di/dt = 2000A/µs
Tj = 25°C
Tj = 125°C
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT
(TYPICAL )
101
10
REVERSE RECOVERY TIME
(TYPICAL)
102
101
8
103
0
100
200
300
400
FORWARD CURRENT, IF, (AMPERES)
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
103
105
0
6
GATE RESISTANCE, RG, (Ω)
103
FORWARD CURRENT, IF, (AMPERES)
102
100
102
400
GATE RESISTANCE, RG, (Ω)
CAPACITANCE, Cies, Coes, Cres, (pF)
SWITCHING LOSS, Eon, (mJ/PULSE)
103
8
VCC = 900V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
REVERSE RECOVERY CURRENT
(TYPICAL)
104
6
300
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
102
200
REVERSE RECOVERY TIME, trr, (ns)
0
102
COLLECTOR CURRENT, IiC, (AMPERES)
101
104
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
SWITCHING LOSS, Eoff, (mJ/PULSE)
VCC = 900V
VGE = ±15V
RG = 8.2Ω
Tj = 25°C
Tj = 125°C
SWITCHING LOSS, Eon, (mJ/PULSE)
SWITCHING LOSS, Eoff, (mJ/PULSE)
103
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
Cies
104
Coes
103
VGE = 0V
f = 1MHz
Tj = 25°C
102
10-1
Cres
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
VGE = ±15V
RG = 8.2Ω
Tj ≤ 125°C
101
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
5
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
COLLECTOR-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
600
400
IC = 400A
RL = 2.25Ω
Tj = 25°C
0
500
1000
1500
VCE = 0V
12
600V
8
900V
300V
4
0
500
1000
1500
1000
1500
2000
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
100
TRANSIENT IMPEDANCE, Rth(j-c)
TC = 25°C
TRANSIENT IMPEDANCE, Rth(j-c)
TC = 25°C
4
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.029°C/W
4
8
12
GATE RESISTANCE RG, (Ω)
6
500
SHORT CIRCUIT
PULSE WIDTH VS. GATE RESISTANCE
(TYPICAL)
100
0
0
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
8
0
101
2000
VCC = 900V
VGE = ±15V
RG = 8.2Ω
tw ≤ 10µs
Tj ≤ 125°C
102
GATE CHARGE, QG, (nC)
VCC = 1200V
VGE = ±15V
Tj = 125°C
12
103
GATE CHARGE, QG, (nC)
16
PULSE WIDTH, tw, (s)
16
0
2000
IC = 400A
RL = 2.25Ω
Tj = 25°C
COLLECTOR CURRENT, IiC, (AMPERES)
800
0
104
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1000
200
SHORT CIRCUIT
SAFE OPERATING AREA
(TYPICAL)
GATE-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
16
10-4
10-3
10-2
10-1
TIME, (s)
100
101
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 0.056°C/W
10-4
10-3
10-2
10-1
100
101
TIME, (s)
7/05