MG600J2YS61A MITSUBISHI IGBT Module MG600J2YS61A(600V/600A 2in1) High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • VCE (sat) = 2.2 V (typ.) Equivalent Circuit Ｃ1 5 6 FO 7 E1/C2 4 OT 1 2 FO 3 E2 Signal terminal 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2004-10-01 1/13 MG600J2YS61A Package Dimensions 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 5 6 3 4 1 2 25.4 ± 0.6 8 1. G (L) 2. FO (L) 3. E (L) 4. VD 5. G (H) 6. FO (H) 7. E (H) 8. Open 2.54 7 2.54 Signal Terminal Layout 2.54 Weight: 375 g 2004-10-01 2/13 MG600J2YS61A Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 600 1 ms ICP 1200 DC IF 600 1 ms IFM 1200 Collector power dissipation (Tc = 25°C) PC 2770 W Control voltage (OT) VD 20 V Collector current Inverter Forward current Control A Fault input voltage VFO 20 V Fault input current IFO 20 mA Tj 150 °C Storage temperature range Tstg −40~125 °C Operation temperature range Tope −20~100 °C Isolation voltage Visol 2500 (AC 1 min) V ⎯ 3 (M5) N･m Junction temperature Module A Screw torque Electrical Characteristics (Tj = 25°C) 1. Inverter Stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance IGES ICES VGE (off) VCE (sat) Cies Turn-on delay time Switching time Symbol Turn-off time Fall time Test Condition Min Typ. Max Unit VGE = ±20 V, VCE = 0 ⎯ ⎯ +3/−4 mA VGE = +10 V, VCE = 0 ⎯ ⎯ 100 nA VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VCE = 5 V, IC = 600 mA V VGE = 15 V, IC = 600 A 6.0 7.0 8.0 Tj = 25°C ⎯ 2.2 2.5 Tj = 125°C ⎯ ⎯ 2.8 ⎯ 125 ⎯ 0.10 ⎯ 1.00 ⎯ ⎯ 2.00 ⎯ ⎯ 0.50 VCE = 10 V, VGE = 0, f = 1 MHz td (on) toff tf Reverse recovery time trr Forward voltage VF VCC = 300 V, IC = 600 A VGE = ±15 V, RG = 5.1 Ω (Note 1) IF = 600 A V nF µs ⎯ ⎯ 0.50 ⎯ 2.2 2.6 V Min Typ. Max Unit Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25°C) Characteristics Symbol Fault output current OC Over temperature OT Fault output delay time td (Fo) Test Condition VGE = 15 V ⎯ VCC = 300 V, VGE = ±15 V 720 ⎯ ⎯ A 100 ⎯ 125 °C ⎯ ⎯ 6.5 µs 2004-10-01 3/13 MG600J2YS61A 3. Module (Tc = 25°C) Characteristics Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ⎯ ⎯ 0.045 Inverter FRD stage ⎯ ⎯ 0.068 With silicon compound ⎯ 0.013 ⎯ Unit °C/W °C/W Switching Time Test Circuit RG IF −VGE VCC IC L RG Timing Chart 90% VGE 10% 90% Irr Irr 20% Irr 90% IC trr 10% td (on) 10% td (off) tf 2004-10-01 4/13 MG600J2YS61A Remark <Short circuit capability condition> Short circuit capability is 6 µs after fault output signal. Please keep following condition to use fault output signal. • VCC < = 375 V • 13.8 V < = VGE < = 16.0 V • RG > Ω 5.1 = • Tj < = 125°C <Gate voltage> To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions. <Recommneded conditions for application> Characteristics Symbol Min Typ. Max Unit P-N power terminal supply voltage VCC ⎯ 300 375 V Gate voltage VGE 13.8 15 16 V Gate resistance RG 5.1 ⎯ ⎯ Ω Switching frequency fc ⎯ ⎯ 20 kHz <For parallel use> For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat) VCE (sat) Min Max 20 1.8 2.0 22 1.9 2.2 24 2.1 2.4 26 2.3 2.5 VF Min Max D 1.9 2.2 E 2.1 2.4 F 2.3 2.6 VF 2004-10-01 5/13 MG600J2YS61A IC – VCE 600 Common emitter Tj = 25°C 500 15 V VGE = 20 V Collector current IC (A) 12 V 400 10 V 300 200 100 9V 0 0 1 2 3 Collector-emitter voltage 4 5 VCE (V) IC – VCE 600 Common emitter Tj = 125°C 12 V 10 V 500 15 V Collector current IC (A) VGE = 20 V 400 300 9V 200 100 0 0 1 2 Collector-emitter voltage 3 4 5 VCE (V) 2004-10-01 6/13 MG600J2YS61A VCE – VGE Collector-emitter voltage VCE (V) 12 10 Common emitter Tj = 25°C 8 600 A 6 4 IC = 900 A 2 300 A 0 0 5 10 Gate-emitter voltage VGE 15 20 15 20 (V) VCE – VGE Collector-emitter voltage VCE (V) 12 10 Common emitter Tj = 125°C 8 6 600 A IC = 900 A 4 2 300 A 0 0 5 10 Gate-emitter voltage VGE (V) VCE – VGE Collector-emitter voltage VCE (V) 12 10 Common emitter Tj = 40°C 8 6 600 A 4 IC = 900 A 2 300 A 0 0 5 10 Gate-emitter voltage VGE 15 20 (V) 2004-10-01 7/13 MG600J2YS61A IC – VGE 1000 Common emitter VCE = 5 V Collector current IC (A) 800 600 400 Tj = 125°C −40 C 25°C 200 0 0 4 8 Gate-emitter voltage VGE 12 (V) IF – V F 600 Common cathode VGE = 0 −40°C Forward current IF (A) 500 400 300 Tj = 25°C 125°C 200 100 0 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V) 2004-10-01 8/13 MG600J2YS61A Switching time – RG 10000 Common emitter VCC = 300 V IC = 600 A VGE = ±15 V Tj = 25°C Tj = 125°C toff 3000 Switching time (ns) ton td (on) td (off) 1000 tr 300 tf 100 0 10 5 Gate resistance 15 RG 25 20 (Ω) Switching time – IC 10000 3000 Common emitter VCC = 300 V RG = 5.1 Ω VGE = ±15 V Tj = 25°C Tj = 125°C toff Switching time (ns) 1000 ton td (on) td (off) 300 tr tf 100 30 10 0 100 200 300 400 Collector current IC 500 600 700 (A) 2004-10-01 9/13 MG600J2YS61A Eon, Eoff – RG 1000 Common emitter VCC = 300 V IC = 600 A VGE = ±15 V Tj = 25°C Tj = 125°C Eon Eoff 100 Switching loss Eon, Eoff (mJ) 300 30 10 0 10 5 15 Gate resistance RG 25 20 (Ω) Eon, Eoff – IC 100 Common emitter VCC = 300 V RG = 5.1 Ω VGE = ±15 V Tj = 25°C Tj = 125°C Eoff Eon 10 Switching loss Eon, Eoff (mJ) 30 3 1 0 100 200 300 500 400 Collector current IC 600 700 (A) 2004-10-01 10/13 MG600J2YS61A Irr, trr – IF 1000 Reverse recovery time trr (ns) Reveres recovery current Irr (A) Common emitter VCC = 300 V RG = 5.1 Ω VGE = ±15 V Tj = 25°C Tj = 125°C trr 300 100 Irr 30 10 0 200 100 400 300 Forward current IF 600 500 (A) Edsw – IF Reveres recovery loss Edsw (mJ) 10.00 3.00 1.00 0.30 Common emitter VCC = 300 V 0.10 0 100 200 300 Forward current RG = 5.1 Ω Tj = 25°C VGE = ±15 V Tj = 125°C 400 IF 500 600 700 (A) 2004-10-01 11/13 MG600J2YS61A VCE, VGE – QG 500 20 Common emitter RL = 0.5 Ω Tj = 25°C 400 300 12 200 V 300 V 100 V 200 8 VCE = 0 4 100 0 0 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) 16 2000 1000 3000 Charge 4000 QG 5000 0 6000 (nC) C – VCE 1000000 300000 Cies Capacitance C (pF) 100000 30000 Coes 10000 Cres 3000 1000 300 100 0.01 VGE = 0 V f = 1 MHz Tc = 25°C 0.1 1 Collector-emitter voltage 10 100 VCE (V) 2004-10-01 12/13 MG600J2YS61A Reverse bias SOA 10000 3000 Collector current IC (A) 1000 300 100 30 10 3 1 0 Tj = 125°C RG = 5.1Ω VGE = ±15 V 100 200 300 400 Collector-emitter voltage 500 600 700 VCE (V) Rth – tw 1 Tc = 25°C 0.1 Rth (j-c) (°C/W) Diode stage Transistor stage 0.01 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 2004-10-01 13/13