MG800J2YS50A MITSUBISHI IGBT Module MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal (TH) Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2 Fo2 E2 E2 2004-10-01 1/9 MG800J2YS50A Package Dimensions Unit: mm Weight: 680 g (typ.) 2004-10-01 2/9 MG800J2YS50A Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V Collector current DC IC 800 A Forward current DC IF 800 A PC 2900 W Collector power dissipation (Tc = 25°C) Junction temperature Tj 150 °C Storage temperature range Tstg −40~125 °C Isolation voltage VIsol 2500 (AC 1 min) V Terminal: M8 ⎯ 10 N·m Mounting: M5 ⎯ 3 N·m Screw torque Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate Leakage current IGES VGE = ±20 V, VCE = 0 V ⎯ ⎯ ±10 µA Collector cut-off current ICES VCE = 600 V, VGE = 0 V ⎯ ⎯ 1 mA VGE (off) IC = 800 mA, VCE = 5 V V Gate-emitter cut-off voltage Collector-emitter saturation voltage VCE (sat) IC = 800 A, VGE = 15 V 5.0 6.5 8.0 Tj = 25°C ⎯ 2.4 3.0 Tj = 125°C ⎯ 2.6 3.3 Input capacitance Cies ⎯ 93000 ⎯ pF Gate-emitter voltage VGE ⎯ 13 15 17 V Gate resistance RG ⎯ 4.7 ⎯ 15 Ω Switching time VCE = 10 V, VGE = 0 V, f = 1 MHz V td (on) ⎯ 0.3 ⎯ tr ⎯ 0.25 ⎯ ⎯ 0.55 ⎯ ⎯ 0.85 ⎯ ton td (off) Inductive load VCC = 300 V IC = 800 A VGE = ±15 V RG = 4.7 Ω ⎯ 0.15 0.30 ⎯ 1.05 ⎯ Tj = 25°C ⎯ 2.3 3.0 Tj = 125°C ⎯ 2.1 ⎯ IF = 800 A, VGE = −10 V di/dt = 2000 A/µs ⎯ ⎯ 0.5 Transistor stage ⎯ ⎯ 0.043 Diode stage ⎯ ⎯ 0.056 1600 ⎯ ⎯ (Note) tf toff Forward voltage Reverse recovery time Thermal resistance RTC Operating current VF trr IF = 800A, VGE = 0V Rth (j-c) Irtc Tj = 25°C µs V µs C/W 2004-10-01 A 3/9 MG800J2YS50A Thermistor Characteristics Symbol Zero power resistance R25 B value R25/85 Test Condition Min Typ. Max Unit Tc = 25°C ⎯ 100 ⎯ kΩ Tc = 25°C/Tc = 85°C ⎯ 4390 ⎯ K 2500 ⎯ ⎯ Vrms Tc = 25°C Isolation voltage Note: Switching time measurement circuit and input/output waveforms VGE 90% RG IF 10% 0 −VGE trr VCC IC L IC 90% 90% RG VCE 10% 0 td (off) tf toff 10% td (on) tr ton 2004-10-01 4/9 MG800J2YS50A IC – VCE IC – VCE 1800 20 15 12 1600 Tj = 25°C 1200 10 800 600 400 9 200 IC (A) 1000 Common emitter 1400 Collector current IC (A) 1400 Collector current 1600 1800 1000 1 2 3 4 Collector-emitter voltage VCE 10 800 9 600 400 VGE = 8 V (V) 1 3 4 VCE 5 (V) VCE – VGE 12 (V) Common emitter VCE Tj = 25°C 8 Collector-emitter voltage (V) VCE 2 Collector-emitter voltage VCE – VGE Collector-emitter voltage 12 1200 0 0 5 12 10 15 20 Tj = 125°C 200 VGE = 8 V 0 0 Common emitter 6 4 1600 800 2 IC = 400 A 0 0 8 4 16 12 Gate-emitter voltage VGE 20 (V) Common emitter 10 Tj = 125°C 8 6 1600 4 800 2 IC = 400 A 0 0 4 8 Gate-emitter voltage 16 12 VGE 20 (V) IC – VGE 1800 IC (A) 1400 Collector current 1600 1000 Common emitter VCE = 5 V 1200 Tj = 125°C 25 800 600 400 200 0 0 2 4 6 8 Gate-emitter voltage 10 VGE 12 14 16 (V) 2004-10-01 5/9 MG800J2YS50A IF – VF VCE, VGE – QG 600 Tj = 25°C 125 500 400 300 200 Common cathode 100 0 0 VGE = 0 V 1 0.5 1.5 2.5 2 3 Forward voltage 3.5 4 VCE = 0 12 300 300 250 200 6 Common emitter RL = 0.375 Ω Tj = 25°C 100 50 4 2 1000 2000 Charge Switching time – RG 0 4000 3000 QG (nC) Switching time – RG 10000 Tj = 25°C Tj = 125°C (mJ) Common emitter VCC = 300 V 5000 VGE = ±15 V IC = 800 A 3000 toff ton 1000 td (off) 500 td (on) 300 tr Switching time loss (µs) 8 200 150 VF (V) 10000 Switching time 10 100 0 0 5 4.5 14 350 VGE 700 16 Gate-emitter voltage (V) Collector-emitter voltage VCE Forward current IF (A) 800 (V) 400 900 Common emitter VCC = 300 V 5000 VGE = ±15 V IC = 800 A 3000 Tj = 25°C Tj = 125°C Eon Eoff 1000 500 300 tf 100 2 4 6 8 Gate resistance 10 RG 12 (Ω) 14 16 100 2 4 6 8 Gate resistance 10 RG 12 14 16 (Ω) 2004-10-01 6/9 MG800J2YS50A Switching time – IC Switching loss – IC 10000 100 Eoff (mJ) toff 1000 td (on) ton td (on) tr 100 10 0 tf Common emitter VCC = 300 V VGE = ±15 V RG = 4.7 Ω 100 200 300 400 Tj = 25°C Tj = 125°C 600 500 Switching time loss Switching time (µs) 50 700 800 30 10 5 Common emitter 3 VCC = 300 V VGE = ±15 V RG = 4.7 Ω 1 0 900 Eon Collector current IC (A) 100 300 200 trr, Irr – IF 700 600 800 900 Edsw – IF 1000 Common cathode 100 Edsw (mJ) trr Irr Reverse recovery loss Peak reverse recovery current Irr (A) Reverse recovery time trr (ns) 500 Collector current IC (A) 1000 10 Common cathode di/dt = 2000 A/µs VGE = ±15 V VCC = 300 V 1 0 400 Tj = 25°C Tj = 125°C 200 400 Forward current Tj = 25°C di/dt = 2000 A/µs VGE = −10 V VCC = 300 V Tj = 25°C Tj = 125°C 100 10 Tj = 125°C 600 IF (A) 800 1 0 200 400 Forward current 600 800 IF (A) 2004-10-01 7/9 MG800J2YS50A C – VCE Rth (t) – tw 1 1000000 Tc = 25°C 0.1 100000 Diode stage (pF) Ciss Capacitance C Transistor stage 0.01 10000 Coss 0.001 0.001 1000 Common emitter VGE = 0 100 0 Crss 0.01 Pulse width f = 1 MHz Tj = 25°C 1 0.1 10 Collector-emitter voltage 100 VCE 800 Scsoa IC (A) 10000 1000 Collector current IC (A) 600 (s) 1000 Reverse bias SOA Collector current 10 (V) 10000 100 10 Tj < = 125°C VGE = ±15 V 1 0 tw 1 RG = 4.7 Ω 200 400 Collector-emitter voltage 600 VCE 800 (V) 1000 100 10 1 0 Common emitter VCC = 300 V Tj < = 125°C tw = 10 µs 200 400 Collector-emitter voltage VCE (V) 2004-10-01 8/9 MG800J2YS50A <VCE(sat) Rank> <VF Rank> VCE(sat) VF Rank Symbol Min. Max. Rank Symbol Min. Max. 21 1.8 22 1.9 2.1 B 1.5 1.8 2.2 C 1.7 2.0 23 2.0 2.3 D 1.9 2.2 24 2.1 2.4 E 2.1 2.4 25 2.2 2.5 F 2.3 2.6 26 2.3 2.6 G 2.5 2.8 27 2.4 2.7 H 2.7 3.0 28 2.5 2.8 29 2.6 2.9 30 2.7 3.0 <Mark Position> MITSUBISHI MG800J2YS50A 23F22G 123456 Low side High side 2004-10-01 9/9