ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 3.3-V / 5-V HIGH-SPEED DIGITAL ISOLATORS Check for Samples: ISO721, ISO721M, ISO722, ISO722M FEATURES 1 • 23 • • • • • • DESCRIPTION 4000-V(peak) Isolation, 560-Vpeak VIORM – UL 1577, IEC 60747-5-2 (VDE 0884, Rev. 2) IEC 61010-1, IEC 60950-1 and CSA Approved – 50 kV/µs Transient Immunity, Typical Signaling Rate 0 Mbps to 150 Mbps – Low Propagation Delay – Low Pulse Skew (Pulse-Width Distortion) Low-Power Sleep Mode High Electromagnetic Immunity Low Input-Current Requirement Failsafe Output Drop-In Replacement for Most Opto and Magnetic Isolators The ISO721, ISO721M, ISO722, and ISO722M are digital isolators with a logic input and output buffer separated by a silicon dioxide (SiO2) insulation barrier. This barrier provides galvanic isolation of up to 4000 V. Used in conjunction with isolated power supplies, these devices prevent noise currents on a data bus or other circuits from entering the local ground, and interfering with or damaging sensitive circuitry. A binary input signal is conditioned, translated to a balanced signal, then differentiated by the capacitive isolation barrier. Across the isolation barrier, a differential comparator receives the logic transition information, then sets or resets a flip-flop and the output circuit accordingly. A periodic update pulse is sent across the barrier to ensure the proper dc level of the output. If this dc-refresh pulse is not received for more than 4 ms, the input is assumed to be unpowered or not being actively driven, and the failsafe circuit drives the output to a logic-high state. APPLICATIONS • • • • Industrial Fieldbus – Modbus – Profibus – DeviceNet™ Data Buses – Smart Distributed Systems ( SDS™) Computer Peripheral Interface Servo Control Interface Data Acquisition FUNCTION DIAGRAM DC Channel Isolation Barrier + _ OSC + PWM Vref _ + POR BIAS Filter Pulse Width Demodulation Carrier Detect POR ISO722 Only IN Input + Filter + _ Vref _ Data MUX AC Detect 3-State Output Buffer EN OUT + AC Channel 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SDS is a trademark of Honeywell. DeviceNet is a trademark of Open Devicenet Vendors Association, Inc. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2006–2010, Texas Instruments Incorporated ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DESCRIPTION (CONTINUED) The symmetry of the dielectric and capacitor within the integrated circuitry provides for close capacitive matching, and allows fast transient voltage changes between the input and output grounds without corrupting the output. The small capacitance and resulting time constant provide for fast operation with signaling rates(1) from 0 Mbps (dc) to 100 Mbps for the ISO721/ISO722, and 0 Mbps to 150 Mbps with the ISO721M/ISO722M. These devices require two supply voltages of 3.3-V, 5-V, or any combination. All inputs are 5-V tolerant when supplied from a 3.3-V supply and all outputs are 4-mA CMOS. The ISO722 and ISO722M devices include an active-low output enable that when driven to a high logic level, places the output in a high-impedance state and turns off internal bias circuitry to conserve power. Both the ISO721 and ISO722 have TTL input thresholds and a noise filter at the input that prevent transient pulses of up to 2 ns in duration from being passed to the output of the device. The ISO721M and ISO722M have CMOS VCC/2 input thresholds, but do not have the noise-filter and the additional propagation delay. These features of the ISO721M also provide for reduced-jitter operation. The ISO721, ISO721M, ISO722, and ISO722M are characterized for operation over the ambient temperature range of –40°C to 125°C. (1) The signaling rate of a line is the number of voltage transitions that are made per second expressed in the units bps (bits per second). IN 2 VCC1 3 GND1 4 8 VCC2 7 GND2 6 OUT 5 GND2 VCC1 1 IN 2 VCC1 3 GND1 8 VCC2 7 EN 6 OUT 5 4 P0066-09 GND2 VCC1 1 IN 2 VCC1 3 GND1 4 Isolation 1 ISO721 DUB Package (Top View) ISO722, ISO722M D Package (Top View) Isolation VCC1 Isolation ISO721, ISO721M D Package (Top View) 8 VCC2 7 GND2 6 OUT 5 GND2 P0106-01 P0066-10 AVAILABLE OPTIONS PRODUCT OUTPUT ENABLED INPUT THRESHOLDS NOISE FILTER PACKAGE (1) MARKED AS ISO721D (rail) D-8 ISO721 NO TTL YES ISO721 DUB-8 (1) 2 ORDERING NUMBER ISO721DR (reel) ISO721DUB (rail) ISO721DUBR (reel) ISO721M NO CMOS NO D-8 IS721M ISO722 YES TTL YES D-8 ISO722 ISO722M YES CMOS NO D-8 IS722M ISO721MD (rail) ISO721MDR (reel) ISO722D (rail) ISO722DR (reel) ISO722MD (rail) ISO722MDR (reel) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 Table 1. REGULATORY INFORMATION VDE CSA UL Certified according to IEC 60747-5-2 Approved under CSA Component Acceptance notice: CA-5A Recognized under 1577 Component Recognition Program (1) File number: 40016131 File number: 1698195 File number: E181974 (1) Production tested ≥ 3000 VRMS for 1 second in accordance with UL 1577. ABSOLUTE MAXIMUM RATINGS (1) UNIT VCC Supply voltage (2), VCC1, VCC2 –0.5 V to 6 V VI Voltage at IN, OUT, or EN terminal –0.5 V to 6 V IO Output current ±15 mA Human-body model JEDEC Standard 22, Test Method A114-C.01 Charged-device model JEDEC Standard 22, Test Method C101 ESD Electrostatic discharge TJ Maximum junction temperature (1) (2) All pins ±2 kV ±1 kV 170°C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values. Vrms values are not listed in this publication. RECOMMENDED OPERATING CONDITIONS MIN VCC IOH IOL Supply voltage (1), VCC1, VCC2 3 MAX UNIT 5.5 V 4 Output current mA –4 ISO72x tui Input pulse duration VIH High-level input voltage (IN, EN) VIL Low-level input voltage (IN, EN) VIH High-level input voltage (IN, EN) VIL Low-level input voltage (IN, EN) TJ Junction temperature H External magnetic field intensity per IEC 61000-4-8 and IEC 61000-4-9 certification (1) TYP 10 ISO72xM 2 VCC 0 0.8 0.7 VCC VCC 0 0.3 VCC ISO72x IOS72xM ns 6.67 See the Thermal Characteristics table V V 150 °C 1000 A/m For the 5-V operation, VCC1 or VCC2 is specified from 4.5 V to 5.5 V. For the 3-V operation, VCC1 or VCC2 is specified from 3 V to 3.6 V. Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 3 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com INSULATION CHARACTERISTICS (1) over recommended operating conditions (unless otherwise noted) PARAMETER VIORM VPR TEST CONDITIONS Maximum working insulation voltage Input to output test voltage VIOTM Transient overvoltage VISO Isolation voltage per UL RS Insulation resistance 4 UNIT 560 Vpeak After Input/Output Safety Test Subgroup 2/3 VPR = VIORM × 1.2, t = 10 s, Partial discharge < 5 pC 672 Vpeak Method a, VPR = VIORM × 1.6, Type and sample test with t = 10 s, Partial discharge < 5 pC 896 Vpeak Method b1, VPR = VIORM × 1.875, 100% production test with t = 1 s, Partial discharge < 5 pC 1050 Vpeak t = 60 s 4000 Vpeak VTEST = VISO, t = 60 s (qualification) 3535 / 2500 VTEST = 1.2 × VISO, t = 1 s (100% production) (2) 4242 / 3000 >109 VIO = 500 V at TS Pollution degree (1) (2) SPECIFICATIONS Vpeak/Vrms Ω 2 Climatic classification 40/125/21 Based on lifetime curve (see the High-Voltage Lifetime of the ISO72x Family of Digital Isolators application report, SLLA197); these devices can withstand 4242 Vpeak / 3000 Vrms for > 10,000 s at 150oC. Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 ELECTRICAL CHARACTERISTICS: VCC1 and VCC2 5-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 TEST CONDITIONS Quiescent VCC1 supply current VI = VCC or 0 V, no load 25 Mbps ISO722/722M Sleep Mode ICC2 VCC2 supply current VOH High-level output voltage VOL Low-level output voltage MIN MAX 0.5 1 2 4 EN at VCC Quiescent VI = VCC or 0 V, No load 25 Mbps VI = VCC or 0 V, no load UNIT mA 200 EN at 0 V or ISO721/721M 8 12 10 14 IOH = -4 mA, See Figure 1 VCC – 0.8 4.6 IOH = –20 mA, See Figure 1 VCC – 0.1 5 mA mA V IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 mA, See Figure 1 0 0.1 VI(HYS) Input voltage hysteresis V 150 IIH High-level input current EN, IN at 2 V IIL Low-level input current EN, IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6pt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 (1) TYP ISO722, ISO722M mV 10 mA –10 EN, IN at VCC 1 25 mA 1 pF 50 kV/ms For 5-V operation, VCC1 and VCC2 are specified from 4.5 V to 5.5 V. SWITCHING CHARACTERISTICS: VCC1 and VCC2 5-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS tPLH Propagation delay, low-to-high-level output tPHL Propagation delay, high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tPLH Propagation delay, low-to-high-level output tPHL Propagation delay, high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| ISO72x MIN TYP MAX 13 17 24 ns 13 EN at 0 V, See Figure 1 8 24 ns 2 ns 10 16 ns 10 16 ns 1 ns Part-to-part skew 0 3 ns tr Output signal rise time 1 tf Output signal fall time tpHZ Sleep-mode propagation delay, high-level-to-high-mpedance output (1) EN at 0 V, See Figure 1 tpZH Sleep-mode propagation delay, high-impedance-to-high-level output tpLZ Sleep-mode propagation delay, low-level-to-high-impedance output ISO722 ISO722M tfs Failsafe output delay time from input power loss ISO72x See Figure 4 8 15 ns 3.5 4 8 ms 5.5 8 15 ns 4 5 8 ms 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 150-Mbps NRZ data input, See Figure 6 1 ISO72xM 150-Mbps unrestricted bit run length data input, See Figure 6 (1) 6 See Figure 3 Sleep-mode propagation delay, high-impedance-to-low-level output Peak-to-peak eye-pattern jitter ns 1 See Figure 2 tpZL tjit(PP) 8 17 0.5 0.5 tsk(pp) ISO72xM UNIT ms ns 2 tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 5 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com ELECTRICAL CHARACTERISTICS: VCC1 at 5-V, VCC2 at 3.3-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 TEST CONDITIONS Quiescent VCC1 supply current VI = VCC or 0 V, no load 25 Mbps ISO722/722M Sleep mode ICC2 VCC2 supply current VI = VCC or 0 V, No load Quiescent 25 Mbps VOH High-level output voltage VOL Low-level output voltage MIN MAX 0.5 1 2 4 EN at VCC UNIT mA 150 EN at 0 V or ISO721/721M VI = VCC or 0 V, no load 4 6.5 5 7.5 IOH = –4 mA, See Figure 1 VCC – 0.4 3 IOH = –20 mA, See Figure 1 VCC – 0.1 3.3 mA mA V IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 mA, See Figure 1 0 0.1 VI(HYS) Input voltage hysteresis V 150 IIH High-level input current EN, IN at 2 V IIL Low-level input current EN, IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6pt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 (1) TYP ISO722, ISO722M mV 10 mA –10 mA EN, IN at VCC 1 25 mA 1 pF 40 kV/ms For 5-V operation, VCC1 is specified from 4.5 V to 5.5 V. For 3.3-V operation, VCC2 is specified from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 at 5-V, VCC2 at 3.3-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS tPLH Propagation delay, low-to-high-level output tPHL Propagation delay , high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tPLH Propagation delay, low-to-high-level output tPHL Propagation delay, high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tsk(pp) (1) EN at 0 V, See Figure 1 ISO72xM Output signal rise time tf Output signal fall time tpHZ Sleep-mode propagation delay, high-level-to-high-mpedance output Sleep-mode propagation delay, high-impedance-to-high-level output tpLZ Sleep-mode propagation delay, low-level-to-high-impedance output ISO722 ISO722M 15 19 30 ns 15 19 30 ns 0.5 3 ns 10 12 20 ns 10 12 20 ns 0.5 1 ns 0 5 ns 2 ns 2 ns 7 11 25 ns 4.5 6 8 ms 7 13 25 ns 4.5 6 8 ms See Figure 3 Sleep-mode propagation delay, high-impedance-to-low-level output tfs Failsafe output delay time from input power loss ISO72x Peak-to-peak eye-pattern jitter UNIT See Figure 2 tpZL See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 150-Mbps NRZ data input, See Figure 6 1 ISO72xM 150-Mbps unrestricted bit run length data input, See Figure 6 6 MAX EN at 0 V, See Figure 1 tpZH (1) TYP Part-to-part skew tr tjit(PP) ISO72x MIN ms ns 2 tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 ELECTRICAL CHARACTERISTICS: VCC1 at 3.3-V, VCC2 at 5-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 TEST CONDITIONS Quiescent VCC1 supply current VCC2 supply current VI = VCC or 0 V, No load Quiescent 25 Mbps VOH High-level output voltage VOL Low-level output voltage MAX 0.3 0.5 1 2 EN at VCC UNIT mA 200 EN at 0 V or ISO721/721M VI = VCC or 0 V, No load 8 12 10 14 IOH = –4 mA, See Figure 1 VCC – 0.8 4.6 IOH = –20 mA, See Figure 1 VCC – 0.1 5 mA mA V IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 mA, See Figure 1 0 0.1 VI(HYS) Input voltage hysteresis V 150 IIH High-level input current EN, IN at 2 V IIL Low-level input current EN, IN at 0.8 V IOZ High-impedance output current CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6pt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 (1) TYP VI = VCC or 0 V, no load 25 Mbps ISO722/722M Sleep mode ICC2 MIN ISO722, ISO722M mV 10 mA –10 mA EN, IN at VCC 1 25 mA 1 pF 40 kV/ms For 5-V operation, VCC2 is specified from 4.5 V to 5.5 V. For 3.3-V operation, VCC1 is specified from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 at 3.3-V, VCC2 at 5-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS tPLH Propagation delay, low-to-high-level output tPHL Propagation delay , high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tPLH Propagation delay, low-to-high-level output tPHL Propagation delay, high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tsk(pp) (1) EN at 0 V, See Figure 1 ISO72xM Output signal rise time tf Output signal fall time tpHZ Sleep-mode propagation delay, high-level-to-high-mpedance output MAX 15 17 30 ns 15 17 30 ns 0.5 2 ns 10 12 21 ns 10 12 21 ns 0.5 1 ns 0 5 ns EN at 0 V, See Figure 1 tpZH Sleep-mode propagation delay, high-impedance-to-high-level output tpLZ Sleep-mode propagation delay, low-level-to-high-impedance output ISO722 ISO722M 1 ns 1 ns 7 9 15 ns 4.5 5 8 ms 7 9 15 ns 4.5 5 8 ms See Figure 3 Sleep-mode propagation delay, high-impedance-to-low-level output tfs Failsafe output delay time from input power loss ISO72x Peak-to-peak eye-pattern jitter UNIT See Figure 2 tpZL See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 150-Mbps NRZ data input, See Figure 6 1 ISO72xM 150-Mbps unrestricted bit run length data input, See Figure 6 (1) TYP Part-to-part skew tr tjit(PP) ISO72x MIN ms ns 2 tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 7 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com ELECTRICAL CHARACTERISTICS: VCC1 and VCC2 at 3.3-V (1) OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER ICC1 TEST CONDITIONS Quiescent VCC1 supply current VI = VCC or 0 V, no load 25 Mbps ISO722/722M Sleep Mode ICC2 VCC2 supply current VI = VCC or 0 V, No load Quiescent 25 Mbps VOH High-level output voltage VOL Low-level output voltage MIN MAX 0.3 0.5 1 2 EN at VCC UNIT mA 150 EN at 0 V or ISO721/721M VI = VCC or 0 V, no load 4 6.5 5 7.5 IOH = –4 mA, See Figure 1 VCC – 0.4 3 IOH = –20 mA, See Figure 1 VCC – 0.1 3.3 mA mA V IOL = 4 mA, See Figure 1 0.2 0.4 IOL = 20 mA, See Figure 1 0 0.1 VI(HYS) Input voltage hysteresis V 150 IIH High-level input current EN, IN at 2 V IIL Low-level input current EN, IN at 0.8 V IOZ High-impedance output ISO722, ISO722M current EN, IN at VCC CI Input capacitance to ground IN at VCC, VI = 0.4 sin (4E6pt) CMTI Common-mode transient immunity VI = VCC or 0 V, See Figure 5 (1) TYP mV 10 mA –10 mA 1 25 mA 1 pF 40 kV/ms For the 3.3-V operation, VCC1 and VCC2 are specified from 3 V to 3.6 V. SWITCHING CHARACTERISTICS: VCC1 and VCC2 at 3.3-V OPERATION over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS tPLH Propagation delay, low-to-high-level output tPHL Propagation delay , high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tPLH Propagation delay, low-to-high-level output tPHL Propagation delay, high-to-low-level output tsk(p) Pulse skew |tPHL – tPLH| tsk(pp) (1) EN at 0 V, See Figure 1 ISO72xM Output signal rise time tf Output signal fall time tpHZ Sleep-mode propagation delay, high-level-to-high-mpedance output Sleep-mode propagation delay, high-impedance-to-high-level output tpLZ Sleep-mode propagation delay, low-level-to-high-impedance output 17 20 34 ns 17 20 34 ns 0.5 3 ns 10 12 25 ns 10 12 25 ns 0.5 1 ns 0 5 ns 2 ns 2 ISO722 ISO722M 7 13 25 ns 5 6 8 µs 7 13 25 ns 5 6 8 ms See Figure 3 Sleep-mode propagation delay, high-impedance-to-low-level output tfs Failsafe output delay time from input power loss ISO72x Peak-to-peak eye-pattern jitter UNIT See Figure 2 tpZL See Figure 4 3 100-Mbps NRZ data input, See Figure 6 2 100-Mbps unrestricted bit run length data input, See Figure 6 3 150-Mbps NRZ data input, See Figure 6 1 ISO72xM 150-Mbps unrestricted bit run length data input, See Figure 6 8 MAX EN at 0 V, See Figure 1 tpZH (1) TYP Part-to-part skew tr tjit(PP) ISO72x MIN ms ns 2 tsk(PP) is the magnitude of the difference in propagation delay times between any specified terminals of two devices when both devices operate with the same supply voltages, at the same temperature, and have identical packages and test circuits. Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 ISOLATION BARRIER PARAMETER MEASUREMENT INFORMATION IN Input Generator NOTE A + VI 50 W - VCC1 IO OUT VCC1/2 VI 0V EN tPHL VOH tPLH + ISO722 and ISO722M VCC1/2 CL Note B VO - 90% 50% VO 50% 10% tr VOL tf 3V ISOLATION BARRIER Figure 1. Switching Characteristic Test Circuit and Voltage Waveforms IN Input Generator NOTE A VO OUT VCC2 VI VCC2/2 0V EN RL = 1 kW ±1 % CL NOTE B + tPZH VOH 50% VO VI VCC2/2 50 W 0.5 V 0V tPHZ - Figure 2. ISO722 Sleep-Mode High-Level Output Test Circuit and Voltage Waveforms 0V ISOLATION BARRIER VCC2 IN Input Generator NOTE A RL = 1 kW ±1% OUT EN CL NOTE B + VI VCC2 VI VO VCC2/2 0V tPZL VO VCC2/2 tPLZ VCC2 0.5 V 50% VOL 50 W - Figure 3. ISO722 Sleep-Mode Low-Level Output Test Circuit and Voltage Waveforms NOTE A: The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3 ns, ZO = 50 Ω. B: CL = 15 pF ± 20% and includes instrumentation and fixture capacitance. Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 9 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) VCC1 0V IN ISOLATION BARRIER VI VCC1 VI OUT VO 0V tfs VO CL 15 pF ±20% EN ISO722 and ISO722M 2.7 V VOH 50% VOL NOTE: VI transition time is 100 ns. VCC1 IN VCC or 0V CI = 0.1 mF, GND1 ISOLATION BARRIER Figure 4. Failsafe Delay Time Test Circuit and Voltage Waveforms ±1% VCC2 OUT GND2 CL 15 pF ±20% VO VCM NOTE: Pass/fail criterion is no change in VO. Figure 5. Common-Mode Transient-Immunity Test Circuit and Voltage Waveform 10 Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 PARAMETER MEASUREMENT INFORMATION (continued) Tektronix HFS9009 Tektronix 784D PATTERN GENERATOR VCC1 In p u t 0V O u tp u t VCC2/2 J itte r NOTE: Bit pattern run length is 216 – 1. Transition time is 800 ps. NRZ data input has no more than five consecutive 1s or 0s. Figure 6. Peak-to-Peak Eye-Pattern Jitter Test Circuit and Voltage Waveform Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 11 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com DEVICE INFORMATION PACKAGE INSULATION CHARACTERISTICS PARAMETER DESCRIPTIONS / TEST CONDITIONS (1) 4.8 DUB-8 6.1 D-8 4.3 DUB-8 6.8 TYP MAX UNIT L(101) Minimum air gap (clearance) L(102) Minimum external tracking (creepage) CTI Tracking resistance (comparative DIN IEC 60112/VDE 0303 Part 1 tracking index) ≥ 175 V Minimum internal gap (internal clearance) 0.008 mm RIO Shortest terminal-to-terminal distance through air MIN D-8 Shortest terminal-to-terminal distance across the package surface Isolation resistance Distance through insulation mm mm Input to output, VIO = 500 V; all pins on each side of the barrier tied together, creating a two-terminal device; TA < 100°C >1012 Ω Input to output, VIO = 500 V, 100°C ≤ TA< TA max. >1011 Ω CIO Barrier capacitance Input-to-output VI = 0.4 sin (4E6pt) 1 pF CI Input capacitance to ground VI = 0.4 sin (4E6pt) 1 pF (1) Creepage and clearance requirements are applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed circuit board do not reduce this distance. Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the Isolation Glossary. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications. IEC 60664-1 RATINGS TABLE PARAMETER TEST CONDITIONS Basic isolation group Installation classification SPECIFICATION Material group IIIa Rated mains voltage ≤150 VRMS I-IV Rated mains voltage ≤300 VRMS I-III DEVICE I/O SCHEMATIC Equivalent Input and Output Schematic Diagrams Enable Output Input VCC2 VCC2 VCC1 VCC2 VCC1 VCC1 750 kW 500 W OUT 500 W EN IN 13 W 1 MW 12 8W Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 IEC SAFETY LIMITING VALUES Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the I/O can allow low resistance to ground or the supply, and without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier, potentially leading to secondary system failures. PARAMETER TEST CONDITIONS IS Safety input, output, or supply current TS Maximum case temperature MIN TYP MAX qJA = 263°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C 100 qJA = 263°C/W, VI = 3.6 V, TJ = 170°C, TA = 25°C 153 UNIT mA 150 °C The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The junction-to-air thermal resistance in the Thermal Characteristics table is that of a device installed in the JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages and is conservative. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance. Table 2. THERMAL CHARACTERISTICS for D-8 PACKAGE (over recommended operating conditions unless otherwise noted) PARAMETER TEST CONDITIONS Junction-to-air RqJB Junction-to-board thermal resistance RqJC Junction-to-case thermal resistance (1) UNIT 263 °C/W High-K thermal resistance (1) 125 °C/W 44 °C/W 75 °C/W Low-K thermal resistance RqJA PD TYP MAX (1) MIN ISO72x VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, Input a 100-Mbps 50% duty-cycle square wave 159 ISO72xM VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, Input a 150-Mbps 50% duty-cycle square wave 195 Device power dissipation mW Tested in accordance with the low-K or high-K thermal metric definition of EIA/JESD51-3 for leaded surface-mount packages. Table 3. THERMAL CHARACTERISTICS for DUB-8 PACKAGE (over recommended operating conditions unless otherwise noted) PARAMETER TEST CONDITIONS RqJA Junction-to-air RqJB Junction-to-board thermal resistance RqJC Junction-to-case thermal resistance PD (1) Device power dissipation ISO721 TYP MAX UNIT Low-K thermal resistance (1) MIN 188 °C/W High-K thermal resistance (1) 117 °C/W 82.1 °C/W 60 °C/W VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, Input a 100 Mbps 50% duty cycle square wave 159 mW Tested in accordance with the low-K or high-K thermal metric definition of EIA/JESD51-3 for leaded surface-mount packages. Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 13 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com 200 Safety Limiting Current − mA 175 VCC1, VCC2 = 3.6 V 150 125 100 75 VCC1, VCC2 = 5.5 V 50 25 0 0 50 100 150 200 o Case Temperature − C Figure 7. qJC Thermal Derating Curve per IEC 60747-5-2 FUNCTION TABLE Table 4. ISO721 (1) (1) VCC1 VCC2 PU PU PD PU INPUT (IN) OUTPUT (OUT) H H L L Open H X H PU = Powered up (VCC ≥ 3 V); PD = Powered down (VCC ≤ 2.5 V); X = Irrelevant; H = High level; L = Low level Table 5. ISO722 (1) VCC1 (1) 14 VCC2 INPUT (IN) ISO722/ISO722M OUTPUT ENABLE (EN) OUTPUT (OUT) H L or open H L L or open L X H Z PU PU Open L or open H PD PU X L or open H PD PU X H Z PU = Powered up (VCC ≥ 3 V); PD = Powered down (VCC ≤ 2.5 V); X = Irrelevant; Z = High impedance; H = High level; L = Low level Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 TYPICAL CHARACTERISTICS RMS SUPPLY CURRENT vs SIGNALING RATE RMS SUPPLY CURRENT vs SIGNALING RATE 15 10 VCC1 = 3.3 V, VCC2 = 3.3 V, o TA = 25 C, CL = 15 pF 8 VCC1 = 5 V, VCC2 = 5 V, o TA = 25 C, CL = 15 pF 13 ICC − Supply Current − (mARMS) ICC − Supply Current − (mARMS) 9 14 7 6 ICC2 5 4 3 ICC1 2 12 11 10 9 8 7 ICC1 6 5 4 3 2 1 1 0 0 0 25 50 75 0 100 Figure 9. PROPAGATION DELAY vs FREE-AIR TEMPERATURE PROPAGATION DELAY vs FREE-AIR TEMPERATURE 100 20 16 tPLH 15 tPHL ISO72xM 10 VCC1 = 3.3 V, VCC2 = 3.3 V, CL = 15 pF, Air Flow at 7 cf/m 5 -10 5 20 35 50 80 65 95 Propagation Delay − ns 20 -25 tPLH 18 ISO72x tPHL tPHL ISO72x Propagation Delay − ns 75 Figure 8. tPLH 14 tPLH 12 tPHL 10 8 ISO72xM 6 VCC1 = 5 V, VCC2 = 5 V, CL = 15 pF, Air Flow at 7 cf/m 4 2 0 -40 110 125 -25 -10 o 5 20 35 50 80 65 95 110 125 o TA − Free-Air Temperature − C TA − Free-Air Temperature − C Figure 10. Figure 11. ISO72x INPUT THRESHOLD VOLTAGE vs FREE-AIR TEMPERATURE ISO72xM INPUT THRESHOLD VOLTAGE vs FREE-AIR TEMPERATURE 1.4 2.5 5-V (VIT+) 2.4 1.3 3.3-V (VIT+) 1.25 1.2 Air Flow at 7 cf/m 1.15 5-V (VIT- ) 1.1 VIT − Input Voltage Threshold − V 1.35 5-V (VIT+) 2.3 2.2 5-V (VIT-) 2.1 2 Air Flow at 7 cf/m 1.9 1.8 3.3-V (VIT+) 1.7 1.6 1.05 3.3-V (VIT- ) 1 -40 50 Signaling Rate (Mbps) 25 0 -40 25 Signaling Rate (Mbps) 30 VIT − Input Voltage Threshold − V ICC2 -25 -10 5 20 35 50 3.3-V (VIT-) 1.5 80 65 o TA − Free-Air Temperature − C 95 110 125 1.4 -40 -25 -10 5 20 50 80 65 95 110 125 o Figure 12. Copyright © 2006–2010, Texas Instruments Incorporated 35 TA − Free-Air Temperature − C Figure 13. Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 15 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) HIGH-LEVEL OUTPUT CURRENT vs HIGH-LEVEL OUTPUT VOLTAGE 2.92 -80 2.9 -70 IOH − High-Level Output Current − mA VCC1 Failsafe Voltage − V VCC1 FAILSAFE THRESHOLD VOLTAGE vs FREE-AIR TEMPERATURE Vfs+ 2.88 VCC = 5 V or 3.3 V, CL = 15 pF, Air Flow at 7 cf/m 2.86 2.84 2.82 Vfs- 2.8 2.78 -40 o TA = 25 C VCC = 5 V -60 -50 -40 VCC = 3.3 V -30 -20 -10 0 -25 -10 5 20 35 50 80 65 95 0 110 125 1 2 3 4 5 6 VOH − High-Level Output Voltage − V o TA − Free-Air Temperature − C Figure 14. Figure 15. LOW-LEVEL OUTPUT CURRENT vs LOW-LEVEL OUTPUT VOLTAGE 70 o IOL − Low-Level Output Current − mA TA = 25 C 60 VCC = 5 V 50 40 30 VCC = 3.3 V 20 10 0 0 1 2 3 4 5 VOL − Low-Level Output Voltage − V Figure 16. 16 Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 APPLICATION INFORMATION MANUFACTURER CROSS-REFERENCE DATA The ISO72xx isolators have the same functional pinout as those of most other vendors, and they are often pin-for-pin drop-in replacements. The notable differences in the products are propagation delay, signaling rate, power consumption, and transient protection rating. Table 6 is used as a guide for replacing other isolators with the ISO72x family of single channel isolators. IN 2 VCC1 3 6 OUT GND1 4 5 GND2 GND1 4 8 VCC2 7 GND2 6 OUT 5 GND2 VDD1 1 VI 2 VDD1 3 GND1 4 8 VDD2 7 GND2 6 VO 5 GND2 VDD1 1 VI 2 * 3 GND1 4 IL710 8 VDD2 7 NC VDD1 1 VI 2 6 VO 5 GND2 NC 3 GND1 4 8 VDD2 7 VOE Isolation VCC1 1 HCPL-xxxx ADuM1100 Isolation VCC1 3 8 VCC2 7 EN Isolation IN 2 Isolation VCC1 1 ISO721 or ISO721M Isolation ISO722 or ISO722M 6 VO 5 GND2 Figure 17. Pin Cross Reference Table 6. CROSS REFERENCE PIN 7 ISOLATOR ISO721 (1) (2) ADuM1100 (1) HCPL-xxxx IL710 (1) (2) (3) (4) (5) (2) PIN 1 PIN 2 PIN 3 PIN 4 PIN 5 PIN 6 ISO721 OR ISO721M VCC1 IN VCC1 GND1 GND2 OUT GND2 VDD1 VI VDD1 GND1 GND2 VO GND2 VDD2 VDD1 VI *Leave Open (3) GND1 GND2 VO NC (4) VDD2 GND1 GND2 VO V OE VDD2 VDD1 VI NC (5) ISO722 OR ISO722M PIN 8 EN VCC2 Pin 1 should be used as VCC1. Pin 3 may also be used as VCC1 or left open, as long as pin 1 is connected to VCC1. Pin 5 should be used as GND2. Pin 7 may also be used as GND2 or left open, as long as pin 5 is connected to GND2. Pin 3 of the HCPL devices must be left open. This is not a problem when substituting an ISO72xx device, because the extra VCC1 on pin 3 may be left an open circuit as well. An HCPL device pin 7 must be left floating (open) or grounded when an ISO722 or ISO722M device is to be used as a drop-in replacement. If pin 7 of the ISO722 or ISO722M device is placed in a high logic state, the output of the device is disabled. Pin 3 of the IL710 must not be tied to ground on the circuit board because this shorts the ISO72xx's VCC1 to ground. The IL710 pin 3 may only be tied to VCC or left open to drop in an ISO72xx. VCC1 VCC2 2 mm max. from VCC1 0.1mF ISO721 or ISO 721M 1 8 2 mm max. from VCC2 0.1mF 2 IN 7 6 3 OUT 4 5 INPUT OUTPUT GND1 GND2 Figure 18. Basic Application Circuit Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 17 ISO721, ISO721M ISO722, ISO722M SLLS629J – JANUARY 2006 – REVISED JULY 2010 www.ti.com ISOLATION GLOSSARY Creepage Distance — The shortest path between two conductive input to output leads measured along the surface of the insulation. The shortest distance path is found around the end of the package body. Clearance — The shortest distance between two conductive input to output leads measured through air (line of sight). Input-to Output Barrier Capacitance — The total capacitance between all input terminals connected together, and all output terminals connected together. Input-to Output Barrier Resistance — The total resistance between all input terminals connected together, and all output terminals connected together. Primary Circuit — An internal circuit directly connected to an external supply main or other equivalent source which supplies the primary circuit electric power. Secondary Circuit — A circuit with no direct connection to primary power, which derives its power from a separate isolated source. Comparative Tracking Index (CTI) — CTI is an index used for electrical insulating materials that is defined as the numerical value of the voltage which causes failure by tracking during standard testing. Tracking is the process that produces a partially conducting path of localized deterioration on or through the surface of an insulating material as a result of the action of electric discharges on or close to an insulation surface -- the higher the CTI value of the insulating material, the smaller the minimum creepage distance. Generally, insulation breakdown occurs either through the material, over its surface, or both. Surface failure may arise from flashover or from the progressive degradation of the insulation surface by small localized sparks. Such sparks are the result of the breaking of a surface film of conducting contaminant on the insulation. The resulting break in the leakage current produces an overvoltage at the site of the discontinuity, and an electric spark is generated. These sparks often cause carbonization on insulation material and lead to a carbon track between points of different potential. This process is known as tracking. 18 Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M ISO721, ISO721M ISO722, ISO722M www.ti.com SLLS629J – JANUARY 2006 – REVISED JULY 2010 Insulation: Operational insulation — Insulation needed for the correct operation of the equipment. Basic insulation — Insulation to provide basic protection against electric shock. Supplementary insulation — Independent insulation applied in addition to basic insulation in order to ensure protection against electric shock in the event of a failure of the basic insulation. Double insulation — Insulation comprising both basic and supplementary insulation. Reinforced insulation — A single insulation system which provides a degree of protection against electric shock equivalent to double insulation. Pollution Degree: Pollution Degree 1 — No pollution, or only dry, nonconductive pollution occurs. The pollution has no influence. Pollution Degree 2 — Normally, only nonconductive pollution occurs. However, a temporary conductivity caused by condensation must be expected. Pollution Degree 3 — Conductive pollution occurs or dry nonconductive pollution occurs which becomes conductive due to condensation which is to be expected. Pollution Degree 4 – Continuous conductivity occurs due to conductive dust, rain, or other wet conditions. Installation Category: Overvoltage Category — This section is directed at insulation co-ordination by identifying the transient overvoltages which may occur, and by assigning four different levels as indicated in IEC 60664. I: Signal level — Special equipment or parts of equipment. II: Local level — Portable equipment, etc. III: Distribution level — Fixed installation IV: Primary supply level — Overhead lines, cable systems Each category should be subject to smaller transients than the category above. A A A REVISION HISTORY Changes from Revision I (February 2010) to Revision J Page • Changed V to Vpeak in UNIT column of IEC Insulation Characteristics table ..................................................................... 4 • Added row for VISO to IEC Insulation Characteristics table .................................................................................................. 4 • Changed note from " ............................................................................................................................................................. 5 • Removed VCC2 from 5-V operation, changed 3-V operation to 3.3-V operation, and removed VCC1 from 3.3-V operation in note. .................................................................................................................................................................. 6 • Removed VCC1 from 5-V operation, changed 3-V operation to 3.3-V operation, and removed VCC2 from 3.3-V operation in note. .................................................................................................................................................................. 7 • Removed 5-V operation, changed 3-V operation to 3.3-V operation, and changed " .......................................................... 8 • Added "INSULATION" to the title of "PACKAGE CHARACTERISTICS" table ................................................................... 12 • Added "Descriptions" to header of PACKAGE INSULATION CHARACTERISTICS table ................................................. 12 Changes from Revision H (June 2009) to Revision I • Page Changed 50 kV/s to 50 kV/µs ............................................................................................................................................... 1 Copyright © 2006–2010, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): ISO721 ISO721M ISO722 ISO722M 19 PACKAGE OPTION ADDENDUM www.ti.com 10-Jul-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) ISO721D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples ISO721DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples ISO721DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Purchase Samples ISO721DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Purchase Samples ISO721DUB ACTIVE SOP DUB 8 50 Green (RoHS & no Sb/Br) CU NIPDAU Level-4-260C-72 HR Purchase Samples ISO721DUBR ACTIVE SOP DUB 8 350 Green (RoHS & no Sb/Br) CU NIPDAU Level-4-260C-72 HR Request Free Samples ISO721MD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Contact TI Distributor or Sales Office ISO721MDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Contact TI Distributor or Sales Office ISO721MDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Purchase Samples ISO721MDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Purchase Samples ISO722D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Contact TI Distributor or Sales Office ISO722DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Contact TI Distributor or Sales Office ISO722DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples ISO722DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples ISO722MD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Contact TI Distributor or Sales Office ISO722MDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Contact TI Distributor or Sales Office ISO722MDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Request Free Samples Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com Orderable Device ISO722MDRG4 10-Jul-2010 Status (1) ACTIVE Package Type Package Drawing SOIC D Pins 8 Package Qty 2500 Eco Plan (2) Green (RoHS & no Sb/Br) Lead/ Ball Finish MSL Peak Temp CU NIPDAU Level-1-260C-UNLIM (3) Samples (Requires Login) Request Free Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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