ONSEMI MBRA340T3_06

MBRA340T3
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
Pb−Free Package is Available
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
1
Cathode
2
Anode
1
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
3.0
2
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
A34
AYWWG
A34
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
A
Device
MBRA340T3
IFSM
100
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
10,000
V/ms
MBRA340T3G
Package
Shipping †
SMA
5000/Tape & Reel
SMA
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 4
1
Publication Order Number:
MBRA340T3/D
MBRA340T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RθJL
RθJA
15
81
°C/W
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
VF
Maximum Instantaneous Forward Voltage (Note 3)
TJ = 25°C
TJ = 100°C
0.450
0.390
TJ = 25°C
TJ = 100°C
0.3
15
(IF = 3.0 A)
IR
Maximum Instantaneous Reverse Current
(VR = 40 V)
Volts
mA
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
1 T = 125°C
J
0.1
0.10
TJ = 100°C
0.20
TJ = 25°C
0.30
TJ = −55°C
0.40
0.50
0.60
TJ = 125°C
TJ = 100°C
TJ = −55°C
TJ = 25°C
0.20
0.30
0.40
0.50
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E−3
IR, REVERSE CURRENT (AMPS)
1
0.1
0.10
IR, MAXIMUM REVERSE CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
0.60
100E−3
TJ = 125°C
10E−3
1E−3
TJ = 100°C
100E−6
10E−6
TJ = 25°C
1E−6
TJ = 125°C
10E−3
TJ = 100°C
1E−3
TJ = 25°C
100E−6
100E−9
TJ = −55°C
10E−9
1E−9
100E−12
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
TJ = −55°C
10E−6
1E−6
0
Figure 3. Typical Reverse Current
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
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2
40
MBRA340T3
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
5
4.5
freq = 20 kHz
dc
4
3.5
3
SQUARE WAVE
Ipk/IO = p
2.5
2
1.5
1
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
0.5
0
25
45
65
85
105
125
145
TL, LEAD TEMPERATURE (°C)
1.8
1.6
SQUARE
WAVE
1.4
dc
1.2
1.0
0.8
Ipk/IO = p
0.6
Ipk/IO = 5
0.4
Ipk/IO = 10
0.2
0
Ipk/IO = 20
0
TJ, DERATED OPERATING TEMPERATURE (°C)
TJ = 25 °C
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
1.5
2
2.5
3
3.5
4
4.5
5
Figure 6. Forward Power Dissipation
C, CAPACITANCE (pF)
100
1
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
1000
0.5
35
40
125
RqJA = 22 °C/W
115
RqJA = 43 °C/W
105
95
RqJA = 63 °C/W
85
RqJA = 81 °C/W
75
RqJA = 96 °C/W
65
55
0
Figure 7. Capacitance
5
35
10
15
20
25
30
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating
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3
40
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
MBRA340T3
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
1
0.1
0.02
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)
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4
MBRA340T3
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE C
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.91
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.16
2.41
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.075
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.085
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.095
0.006
0.064
0.016
0.115
0.180
0.220
0.060
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBRA340T3/D