NTGD1100L Power MOSFET 8 V, ±3.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF http://onsemi.com V(BR)DSS 8.0 V ID MAX ±3.3 A 55 m @ −2.5 V 80 m @ −1.8 V SIMPLIFIED SCHEMATIC Features • • • • • • • RDS(on) TYP 40 m @ −4.5 V 4 Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 3000 V Pb−Free Package is Available 2,3 Q2 6 Q1 5 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VIN 8.0 V VON/OFF 8.0 V Continuous Load Current Steady TA = 25°C (Note 1) State TA = 85°C IL ±3.3 A Power Dissipation (Note 1) Steady TA = 25°C State TA = 85°C PD tp = 10 s ILM ±10 A TJ, TSTG −55 to 150 °C IS −1.0 A ESD 3.0 kV TL 260 °C Rating Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RJA 150 °C/W Junction−to−Foot – Steady State (Note 1) RJF 50 Input Voltage (VDSS, P−Ch) ON/OFF Voltage (VGS, N−Ch) Pulsed Load Current Operating Junction and Storage Temperature Source Current (Body Diode) ESD Rating, MIL−STD−883D HBM (100 pF, 1.5 k) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ±2.4 W 0.83 0.43 THERMAL RESISTANCE RATINGS March, 2007 − Rev. 6 D1/G2 6 G1 5 1 TSOP−6 CASE 318G STYLE 11 TZ M G G 1 S1 TZ M G S2 4 2 3 D2 D2 = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGD1100LT1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2007 MARKING DIAGRAM & PIN ASSIGNMENT 1 NTGD1100LT1G Package Shipping † TSOP−6 3000/Tape & Reel TSOP−6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGD1100L/D NTGD1100L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Q2 Drain−to−Source Breakdown Voltage VIN VGS2 = 0 V, ID2 = 250 A 8.0 Forward Leakage Current IFL Characteristic Typ Max Unit TJ = 25°C 1.0 A TJ = 125°C 10 OFF CHARACTERISTICS VGS2 = 0 V, VDS2 = 8.0 V Q1 Gate−to−Source Leakage Current IGSS VDS1 = 0 V, VGS1 = ±8.0 V Q1 Diode Forward On−Voltage VSD IS = −1.0 A, VGS1 = 0 V V −0.7 ±100 nA −1.0 V ON CHARACTERISTICS Voltage ON/OFF VON/OFF Q1 Gate Threshold Voltage 1.5 8.0 V VGS1 = VDS1, ID = 50 A 0.6 1.2 V VGS2 = VDS2, ID = 250 A 1.8 VGS1 Input Voltage VIN Q2 Drain−to−Source On Resistance RDS(on) Load Current VON/OFF = 1.5 V, IL = 1.0 A IL ON/OFF 55 70 VIN = 1.8 V 80 140 1.0 VDROP ≤ 0.2 V, VIN = 2.5 V, VON/OFF = 1.5 V 1.0 VDROP ≤ 0.2 V, VIN = 1.8 V, VON/OFF = 1.5 V 1.0 Q2 A VOUT C1 6 6 5 CO LOAD Q1 1 CI R2 R2 GND Figure 1. Load Switch Application Components Description Values R1 Pullup Resistor Typical 10 k to 1.0 M R2 Optional Slew−Rate Control Typical 0 to 100 k C0 Output Capacitance Usually < 1.0 F C1 Optional In−Rush Current Control Typical ≤ 1000 pF http://onsemi.com 2 m VIN = 2.5 V 2,3 R1 V 55 40 VDROP ≤ 0.2 V, VIN = 5.0 V, VON/OFF = 1.5 V 4 VIN 8.0 VIN = 4.5 V NTGD1100L TYPICAL CHARACTERISTICS 0.400 0.300 0.350 0.250 0.250 VDROP, (V) VDROP, (V) 0.300 TJ = 125°C 0.200 0.150 TJ = 25°C 0.200 TJ = 125°C 0.150 TJ = 25°C 0.100 0.100 0.050 0.050 0 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 IL, (A) IL, (A) Figure 3. VDROP vs. IL @ VIN = 4.5 V TJ = 125°C TJ = 25°C IL = 1.0 A VON/OFF = 1.5 to 8.0 V 0 1.00 2.00 3.00 4.00 5.00 6.00 7.00 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.50 0.48 0.46 0.44 0.42 0.40 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 8.00 0.15 0.14 IL = 1.0 A 0.13 VON/OFF = 1.5 to 8.0 V 0.12 0.11 0.10 VIN = 1.8 V 0.09 0.08 0.07 0.06 VIN = 5.0 V 0.05 0.04 0.03 0.02 0.01 0 −50 −25 0 25 50 75 100 125 VIN, (V) TJ, JUNCTION TEMPERATURE (°C) Figure 4. On Resistance vs. Input Voltage Figure 5. On Resistance Variation with Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 2. VDROP vs. IL @ VIN = 2.5 V 1.7 1.5 IL = 1.0 A VON/OFF = 1.5 to 8.0 V VIN = 5.0 V 1.3 1.1 VIN = 1.8 V 0.9 0.7 −50 −25 0 25 50 75 100 125 150 TJ, TEMPERATURE JUNCTION (°C) Figure 6. Normalized On Resistance Variation with Temperature http://onsemi.com 3 150 NTGD1100L TYPICAL CHARACTERISTICS 60 60 IL = 1.0 A VON/OFF = 1.5 V C1 = 10 F C0 = 1.0 F 45 40 35 30 tf 25 20 tr 15 10 5 0 55 50 td(off) TIME (S) TIME (S) 55 50 1 2 3 4 5 45 40 35 30 tf 25 20 15 10 td(on) 0 td(off) IL = 1.0 A VON/OFF = 3.0 V C1 = 10 F C0 = 1.0 F 6 7 5 0 8 tr td(on) 0 1 2 3 R2 (k) 7 8 30 35 tf 25 30 tr tf 25 20 td(off) IL = 1.0 A VON/OFF = 1.5 V C1 = 10 F C0 = 1.0 F 15 10 TIME (S) TIME (S) 6 Figure 8. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 40 td(on) 20 td(off) 15 IL = 1.0 A VON/OFF = 3.0 V C1 = 10 F C0 = 1.0 F 10 tr 5 5 0 1 2 3 4 5 6 7 0 8 td(on) 0 1 2 R2 (k) 3 4 5 6 7 8 R2 (k) Figure 9. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW RJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 5 R2 (k) Figure 7. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 0 4 Figure 10. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1E−03 Single Pulse 0.01 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION TIME, t (sec) Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad) http://onsemi.com 4 1E+03 NTGD1100L PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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