NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX −20 V 220 m −1.3 A Features P−Channel D • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS ±12 V Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 s) ID IDM −1.3 −4.0 A A PD 400 mW TJ, Tstg − 55 to 150 °C RJA 300 °C/W 2 TL 260 °C SOT−23 CASE 318 STYLE 21 Rating Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. S MARKING DIAGRAM/ PIN ASSIGNMENT 3 3 Drain 1 PO2W 1 Gate 2 Source PO2 = Specific Device Code W = Work Week ORDERING INFORMATION Device NTR1P02LT1 NTR1P02LT1G NTR1P02LT3 NTR1P02LT3G Package Shipping† SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel SOT−23 10,000 Tape & Reel SOT−23 (Pb−Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 5 1 Publication Order Number: NTR1P02LT1/D NTR1P02LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min V(BR)DSS −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = −10 A) Zero Gate Voltage Drain Current (VDS = −16 V, VGS = 0 V) (VDS = −16 V, VGS = 0 V, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V) IGSS V A −1.0 −10 ±100 nA −1.0 −1.25 V 0.135 0.190 0.22 0.35 ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = −250 A) VGS(th) Static Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −0.75 A) (VGS = −2.5 V, ID = −0.5 A) rDS(on) −0.7 DYNAMIC CHARACTERISTICS (VDS = −5.0 V) Ciss 225 Output Capacitance (VDS = −5.0 V) Coss 130 Transfer Capacitance (VDG = −5.0 V) Crss 55 td(on) 7.0 tr 15 td(off) 18 tf 20 QT 5500 Input Capacitance pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −5.0 V, ID = −1.0 A, RL = 5.0 , RG = 6.0 ) Fall Time Total Gate Charge (VDS = −16 V, ID = −1.5 A, VGS = −4.0 V) ns pC SOURCE−DRAIN DIODE CHARACTERISTICS IS −0.6 Pulsed Current ISM −0.75 Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A) VSD −1.0 Continuous Current Reverse Recovery Time trr 16 ta 11 tb 5.5 QRR 0.0085 (IS = −1.0 A, VGS = 0 V, dIS/dt = 100 A/s) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 A V ns C NTR1P02LT1 1.4 VGS = −3 V −2 V −2.8 V 2 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 2.5 TJ = 25°C −2.6 V −1.8 V −2.4 V 1.5 −2.2 V 1 −1.6 V 0.5 −1.2 V −1.4 V 0 VDS ≥ −10 V 1.2 1 0.8 TJ = 25°C 0.6 0.4 TJ = 100°C 0.2 TJ = −55°C 0 0 4 1 2 3 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5 1 1.2 1.4 1.6 1.8 2 2.2 2.4 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.04 ID = −10 A TJ = 25°C 0.03 0.02 0.01 0 0 2 4 8 6 10 0.3 TJ = 25°C VGS = −2.5 V 0.25 0.2 TJ = 100°C 0.15 TJ = 25°C 0.1 TJ = −55°C 0.05 0 0.2 0.3 0.4 0.6 0.7 0.8 0.9 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 0.3 VGS = 0 V ID = −0.5 A VGS = −2.5 V 0.2 0.1 TJ = 125°C 100 10 TJ = 100°C 1 0.1 0 −50 0.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics −25 0 25 50 75 100 125 150 0.01 TJ = 25°C 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 1 5000 C, CAPACITANCE (pF) VGS = 0V TJ = 25°C VDS = 0V 4500 4000 3500 3000 Ciss 2500 2000 1500 Coss 1000 Crss 500 0 15 25 10 20 5 15 −VGS −VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 5 0 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR1P02LT1 6 28 4 Q1 Q2 12 2 8 VDS = −16 V ID = −1.5 A TJ = 25°C 4 0 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 0.8 −IS, SOURCE CURRENT (AMPS) VDD = −16 V ID = −1 A tr t, TIME (ns) 20 16 Figure 7. Capacitance Variation tf 10 td(off) td(on) 1 24 QT 1 10 VGS = 0 V TJ = 25°C 0.6 0.4 0.2 0 1.00E−01 100 RG, GATE RESISTANCE () 3.00E−01 5.00E−01 7.00E−01 9.00E−01 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTR1P02LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 NTR1P02LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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