2SC6106 Ordering number : ENA0878 SANYO Semiconductors DATA SHEET 2SC6106 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 500 V Emitter-to-Base Voltage VEBO 7 V IC 4 A Collector Current Collector Current (Pulse) ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤300µs, duty cycle≤10% Tc=25°C 8 A 1 W 30 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO VCB=500V, IE=0A VEB=5V, IC=0A hFE1 hFE2 VCE=5V, IC=0.3A VCE=5V, IC=2.0A fT Cob VCE=10V, IC=0.3A VCB=10V, f=1MHz Ratings min typ Unit max 40 10 µA 10 µA 80 8 18 MHz 40 pF Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70407KB TI IM TC-00000387 No. A0878-1/4 2SC6106 Continued from preceding page. Symbol Ratings Conditions min Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=1mA, IE=0A IC=5mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO ton tstg IE=1mA, IC=0A VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω tf VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω Collector-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Package Dimensions Package Dimensions unit : mm (typ) 7518-003 unit : mm (typ) 7003-003 5.5 0.85 0.7 1 2 2.3 V 8 2.3 3.0 µs 0.3 µs 3 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 µs 2.5 0.8 2 0.6 0.5 V 0.5 0.5 1 7.5 0.8 1.6 0.6 V 500 0.5 0.85 1.2 V V 1000 1.5 1.5 7.0 4 5.5 4 1.0 1.5 2.3 6.5 5.0 0.5 Unit max 7.0 2.3 6.5 5.0 typ 1.2 Parameter 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 100Ω 50Ω + 470µF + 100µF VCC=200V IC -- VCE VCE=5V 200mA 2.5 2.0 100mA 1.5 50mA 20mA 1.0 3 2 1 0.5 IB=0mA 0 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 --40°C 300mA 3.0 Collector Current, IC -- A Collector Current, IC -- A 3.5 IC -- VBE 4 500mA 400mA 25°C 4.0 Ta= 120 °C VBE= --5V 0 10 IT12741 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT12742 No. A0878-2/4 2SC6106 hFE -- IC DC Current Gain, hFE 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=120°C 100 25°C 5 --40°C 3 2 10 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 2 1.0 7 5 3 2 7 5 C 0° Ta= -4 0.1 --4 0°C 120°C C 25° 25°C 2 3 5 7 0.1 2 3 5 7 1.0 2 Ta= --40°C 25°C 7 120°C 5 3 7 VCC=200V IC/IB2= 5 IB2/IB1= 2.5 7 5 1.0 5 IT12744 SW Time -- IC 10 IC / IB=5 2 3 Collector Current, IC -- A IT12743 Switching Time, SW Time -- µs Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=5 3 2 0.01 5 7 VBE(sat) -- IC 3 VCE(sat) -- IC 7 5 VCE=5V Ta=1 20°C 2 tstg 3 2 1.0 7 5 3 2 tf 0.1 7 5 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A P C= s W 10 1.0 7 5 s 1m 30 ms tio era op 3 2 n 0.1 7 5 2 3 5 7 10 2 3 5 7 100 2 3 5 7 10 IT12746 3 2 1.0 7 5 Tc=25°C IB2= --0.6A L=500mH 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 Collector-to-Emitter Voltage, VCE -- V IT12747 PC -- Ta 1.2 3 5 0.1 1.0 5 7 1000 Collector-to-Emitter Voltage, VCE -- V 2 1.0 7 2 Tc=25°C Single pulse 0.01 1.0 7 Reverse Bias A S O 3 3 2 5 10 Collector Current, IC -- A 0µ DC Collector Current, IC -- A <50µs 10 IC=4A 3 2 3 2 ICP=8A 10 7 5 2 Collector Current, IC -- A Forward Bias A S O 2 2 IT12748 PC -- Tc 35 30 1.0 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 3 0.1 5 7 10 IT12745 0.8 No he at 0.6 sin k 0.4 0.2 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12749 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12750 No. A0878-3/4 2SC6106 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. PS No. A0878-4/4