SPA13003 Ordering number : ENA1402 SANYO Semiconductors DATA SHEET SPA13003 (13003 series) NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol Conditions Ratings Unit VCBO VCES 700 V 700 V VCEO VEBO 400 V 8 V 1 A 2 A IC ICP Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg PW≤300μs, duty cycle≤10% 0.5 A 0.6 W 150 °C -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ Emitter Cutoff Current ICBO IEBO hFE1 VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.1A 15 DC Current Gain hFE2 VCE=5V, IC=0.5A 5 hFE3 VCE=5V, IC=1mA 7 max Unit 10 μA 10 μA 35 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21209CB MS IM TC-00001819 No. A1402-1/4 SPA13003 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time fT Cob VCE=10V, IC=0.1A VCB=10V, f=1MHz VCE(sat) VBE(sat) IC=0.5A, IB=0.1A IC=0.5A, IB=0.1A V(BR)CBO V(BR)CES IC=1mA, IE=0A IC=100μA, RBE=0Ω V(BR)CEO V(BR)EBO ton IC=5mA, RBE=∞ IE=1mA, IC=0A tstg tf Fall Time Ratings Conditions min 20 700 V 700 V 400 V V 1.0 μs IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V 0.3 μs Switching Time Test Circuit IB1 1.8 3.0 OUTPUT IB2 2.2 VR 50Ω 0.6 RB RL + 100μF + 470μF VBE= --5V 0.4 15.0 V μs 0.4 0.5 VCC=200V 3 1.3 1 : Emitter 2 : Collector 3 : Base 0.7 0.7 1.3 3.0 3.8 SANYO : SPA IC -- VCE VCE=5V 0.9 0.4 20mA A 70mA 60mA 90mA 80m 10mA 0.7 0.6 0.5 0.4 0.3 0.2 --40° C 50mA 40mA 30mA 0.8 25°C 0.6 Collector Current, IC -- A 100mA 20° C 20 0m A 150mA 0.8 0.2 IC -- VBE 1.0 Ta= 1 1.0 Collector Current, IC -- A V 0.5 1.0 INPUT 2 pF 0.8 8 PW=20μs D.C.≤1% 1 MHz 10 unit : mm (typ) 7524-004 0.4 Unit max IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V Package Dimensions 4.0 typ 0.1 IB=0mA 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, VCE -- V 4.5 5.0 IT13700 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT13701 No. A1402-2/4 SPA13003 hFE -- IC 7 5 VCE=5V 5 Ta=120°C Ta=120°C DC Current Gain, hFE 3 DC Current Gain, hFE hFE -- IC 7 VCE=0.7V 25°C 2 --40°C 10 7 5 3 25°C 2 --40°C 10 7 5 3 2 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 10 7 5 3 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 2 3 5 7 0.1 2 100 IT13704 IC / IB=5 2 1.0 7 5 3 2 25 °C 0°C 2 Ta=1 0.1 7 5 2 3 5 7 °C --40 2 0.1 3 SW Time -- IC Switching Time, SW Time -- μs Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 7 25°C 120°C 5 7 1.0 IT13705 IC / IB1=10 IB2 / IB1=10 R Load IC / IB=5 Ta= --40°C 5 Collector Current, IC -- A 1.0 1.0 5 7 1.0 IT13703 3 3 0.01 7 2 3 VCE(sat) -- IC 5 VBE(sat) -- IC 3 5 7 0.01 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 2 3 Collector Current, IC -- A f=1MHz 2 1.0 2 IT13702 Cob -- VCB 3 3 0.001 5 7 1.0 5 3 tf tst g 2 0.1 7 3 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A Forward Bias A S O 2 3 5 Reverse Bias A S O 10 s 0μ Collector Current, IC -- A 1.0 s 0μ s 1m 10 m DC 0.1 7 5 op er 3 2 s ati on 1.0 IT13707 L=500μH IB2= --0.2A Ta=25°C Single pulse 2 IC=1A 7 Collector Current, IC -- A ICP=2A 1.0 7 5 3 2 0.01 7 5 3 2 1.0 IT13706 3 30 Collector Current, IC -- A 5 3 2 5 0.1 7 7 5 3 2 0.1 7 5 3 2 Ta=25°C Single pulse 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT14369 0.01 100 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V 1000 IT14417 No. A1402-3/4 SPA13003 PC -- Ta 0.7 Collector Dissipation, PC -- W 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14370 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No. A1402-4/4