2SC6146 Ordering number : ENA1160 SANYO Semiconductors DATA SHEET 2SC6146 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol Conditions Ratings Unit VCBO VCES 800 V 800 V VCEO VEBO 350 V 8 V 1 A IC ICP 2 A 0.5 A Collector Dissipation IB PC 1 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Base Current PW≤300μs, duty cycle≤10% Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Conditions Ratings min typ Unit max ICBO IEBO VCB=400V, IE=0A 10 μA VEB=5V, IC=0A 10 μA hFE1 VCE=5V, IC=0.1A 100 hFE2 VCE=5V, IC=0.5A VCE=5V, IC=1mA 20 hFE3 200 10 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O2208CB MS IM TC-00001663 No. A1160-1/4 2SC6146 Continued from preceding page. Parameter Symbol Ratings Conditions min typ VCE=10V, IC=0.1A VCB=10V, f=1MHz Unit max Gain-Bandwidth Product fT Output Capacitance Cob 20 MHz Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V 1.0 μs Storage Time IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V 1.0 μs Fall Time tf IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V 0.3 μs 10 pF IC=0.5A, IB=0.1A IC=0.5A, IB=0.1A IC=1mA, IE=0A IC=100μA, RBE=0Ω IC=5mA, RBE=∞ IE=1mA, IC=0A Package Dimensions 0.8 V 1.5 V 800 V 800 V 350 V 8 V Switching Time Test Circuit unit : mm (typ) 7519-003 IB1 PW=20μs D.C.≤1% 2.5 6.9 1.45 OUTPUT IB2 1.0 VR RB RL 4.5 1.0 INPUT 1.0 50Ω + 470μF + 100μF 1.0 0.9 1 2 4.0 0.6 0.5 3 VCC=200V 0.45 2.54 2.54 VBE= --5V 1 : Emitter 2 : Collector 3 : Base SANYO : NMP 0.6 40mA 30mA 20mA 0.4 10mA 0.2 0.7 0.6 0.5 0.4 0.3 0.2 --40° C 50mA 0.8 20° C 0.8 VCE=5V 0.9 00mA A 90mA 1 A 80m m 0 7 60mA Collector Current, IC -- A Collector Current, IC -- A 200 IC -- VBE 1.0 150mA Ta= 1 mA 25°C IC -- VCE 1.0 0.1 IB=0mA 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, VCE -- V 4.5 5.0 IT13485 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT13486 No. A1160-2/4 2SC6146 hFE -- IC 5 3 DC Current Gain, hFE DC Current Gain, hFE Ta=120°C 2 25°C 100 7 5 VCE=5V 3 Ta=120°C 2 --40°C 3 2 10 7 5 25°C 100 7 --40°C 5 3 2 10 3 7 2 5 1.0 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 3 0.001 5 7 1.0 IT13487 Collector Current, IC -- A 7 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 10 7 5 3 2 3 5 7 0.01 2 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 10 VCE(sat) -- IC 2 1.0 7 5 3 C 20° 2 1 Ta= 0.1 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.0 7 5 3 C 20° 2 1 Ta= 0.1 7 5 0.01 C 25° --40°C 2 3 5 7 2 0.1 3 Collector Current, IC -- A 2 3 5 Ta= --40°C 25°C 120°C 3 2 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A 3 2 ICP=2A IC=1A s 0μ s 0μ 30 1.0 7 5 7 1.0 IT13492 Forward Bias A S O 5 3 2 DC 0.1 7 5 10 op 1m s m s era tio n 3 2 0.01 7 5 3 2 1.0 IT13493 7 1.0 IT13490 5 IC/IB1= 10 IB2/IB1= 10 R Load Collector Current, IC -- A 5 IC / IB=5 7 SW Time -- IC 0.1 0.1 3 VBE(sat) -- IC 1.0 1.0 IT13491 tf 2 0.1 2 7 tstg 7 10 Switching Time, SW Time -- μs 1.0 5 C 25° --40°C 3 2 5 7 1.0 IT13488 Collector Current, IC -- A IC / IB=10 3 3 3 IT13489 5 2 VCE(sat) -- IC 3 0.01 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 7 0.1 IC / IB=5 5 2 1.0 3 Collector Current, IC -- A Cob -- VCB 3 Output Capacitance, Cob -- pF hFE -- IC 5 VCE=0.7V Tc=25°C Single pulse 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT13699 No. A1160-3/4 2SC6146 Reverse Bias A S O Ta=25°C L=500μH IB2= --0.2A Single pulse 3 Collector Current, IC -- A 2 1.0 7 5 3 2 0.1 7 5 3 PC -- Ta 1.2 1.0 Collector Current, IC -- A 5 0.8 0.6 0.4 0.2 2 0.01 100 0 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V 1000 IT13495 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT13496 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A1160-4/4