SANYO 2SD1060

2SB824 / 2SD1060
Ordering number : EN686J
SANYO Semiconductors
DATA SHEET
2SB824 / 2SD1060
PNP / NPN Epitaxial Planar Silicon Transistors
50V / 5A Switching Applications
Applications
•
Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.
Features
•
Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A, IB= (--)0.3A.
Specifications ( ) : 2SB824
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
(--)60
Collector-to-Emitter Voltage
VCBO
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
IC
ICP
(--)5
A
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
V
(--)9
A
1.75
W
30
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82207FA TI IM TC-00000844 / 913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/5
2SB824 / 2SD1060
Continued from preceding page.
Parameter
Symbol
hFE1
hFE2
VCE=(--)2V, IC=(--)1A
VCE=(--)2V, IC=(--)3A
fT
Cob
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
Collector-to-Base Breakdown Voltage
VCE(sat)
V(BR)CBO
IC=(--)3A, IB=(--)0.3A
IC=(--)1mA, IE=0A
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
IC=(--)1mA, RBE=∞
IE=(--)1mA, IC=0A
Storage Time
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Ratings
Conditions
min
typ
Unit
max
70*
280*
30
30
MHz
(160)100
pF
(--)0.4
V
(--)60
V
(--)50
V
(--)6
V
See specified Test Circuit.
0.1
μs
tstg
See specified Test Circuit.
(0.7)1.4
μs
tf
See specified Test Circuit.
0.2
μs
Fall Time
* : The 2SB824 / 2SD1060 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7507-001
IB1
PW=20μs
tr, tf ≤15ns
OUTPUT
IB2
4.5
10.2
5.1
1.3
INPUT
6.3
VR
100Ω
18.0
+
1μF
1.2
14.0
0.4
2.7
1 : Base
2 : Collector
3 : Emitter
2.55
SANYO : TO-220
IC -- VCE
--8
--150mA
--6
--100mA
--50mA
--4
--2
IC -- VCE
10
mA 45
0m
A
2SB824
mA mA
A
0mA
A --450--400 --350m --30
m
--250mA
00
--5
--200mA
Collector Current, IC -- A
--10
+
1μF
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
1 2 3
2.55
RL
10Ω
VCC=20V
8
2SD1060
A A
0m 0m mA A
40 35 300 250m 200mA
150mA
500
(5.6)
VBE= --5V
0.8
Collector Current, IC -- A
RB
1Ω
50Ω
15.1
2.7
3.6
100mA
6
50mA
4
2
IB=0mA
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE -- V
IB=0mA
0
--2.4
ITR08435
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
2.4
ITR08436
No.686-2/5
2SB824 / 2SD1060
IC -- VBE
--10
--4
--3
--20°C
--5
5
4
3
2
--1
1
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
--1.4
0
5
2
--20°C
100
7
5
--0.1
2
3
5
2
--1.0
3
5
Collector Current, IC -- A
100
7
5
3
2
--1.0
5
3
2
°C
25
C
80°
Ta=
°C
--20
3
2
3
5
2
0.1
3
5
2
1.0
3
5
Collector Current, IC -- A
--0.01
2
10
ITR08440
VCE(sat) -- IC
2SD1060
IC / IB=10
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
5
2
10
2SB824
IC / IB=10
--0.1
25°C
10
0.01
--10 2
ITR08439
VCE(sat) -- IC
--10
Ta=80°C
--20°C
2
5
1.4
ITR08438
2SD1060
VCE=2V
2
3
3
1.2
hFE -- IC
3
2
2
1.0
5
3
10
--0.01
0.8
7
DC Current Gain, hFE
25°C
0.6
1000
Ta=80°C
3
0.4
Base-to-Emitter Voltage, VBE -- V
2SB824
VCE= --2V
7
0.2
ITR08437
hFE -- IC
1000
DC Current Gain, hFE
6
--2
0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
--20°C
--6
Ta=8
0°C
25°C
Collector Current, IC -- A
--7
0
3
2
1.0
5
3
2
°C
25
0.1
5
0°C
8
Ta=
3
2
C
--20°
0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
2
--10
ITR08441
2
5
3
2
--1.0
5
3
2
°C
25
--0.1
80°C
Ta=
°C
--20
5
3
2
--0.01
5
0.1
2
3
5
1.0
2
3
5
2
10
ITR08442
VCE(sat) -- IC
10
2SD1060
IC / IB=20
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB824
IC / IB=20
3
Collector Current, IC -- A
VCE(sat) -- IC
--10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SD1060
VCE=2V
9
8
--8
Ta=
80°C
25°C
Collector Current, IC -- A
--9
IC -- VBE
10
2SB824
VCE= --2V
3
2
1.0
5
3
2
25
0.1
°C
0°C
Ta=8
--20°C
5
3
2
0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC -- A
5
2
--10
ITR08443
2
3
5
0.1
2
3
5
1.0
2
3
Collector Current, IC -- A
5
2
10
ITR08444
No.686-3/5
2SB824 / 2SD1060
VBE(sat) -- IC
--10
2SB824
2SD1060
7
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
3
2
--1.0
IC / IB=10
7
IC / IB=20
5
3
5
3
2
1.0
IC / IB=10
7
IC / IB=20
5
3
2
2
2
3
5
--0.1
2
3
5
2
--1.0
3
5
2
--10
ITR08445
Collector Current, IC -- A
2
ICP= --9A
2
1.0
7
n
Collector Current, IC -- A
3
tio
2
IC=5A
5
era
3
5
3
2
1ms to 100ms : Single pulse
--0.1
5
7
--1.0
2
3
5
2
--10
3
5
5
7 --100
ITR08447
7
1.0
2
3
5
7
3
5
7
100
PC -- Tc
35
2SB824 / 2SD1060
2SB824 / 2SD1060
1.8
1.75
1.6
2
10
Collector-to-Emitter Voltage, VCE -- V ITR08448
PC -- Ta
2.0
1ms to 100ms : Single pulse
0.1
7
Collector-to-Emitter Voltage, VCE -- V
30
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
2
10
ITR08446
op
5
5
s
1m
ms
10
7
3
2SD1060
DC
--1.0
2
1.0
s
0m
s
1m
s
ion
10m s
rat
0m pe
10 C o
D
2
5
ICP=9A
7
3
3
ASO
10
IC= --5A
5
2
0.1
10
7
5
2
2SB824
--10
3
Collector Current, IC -- A
ASO
2
Collector Current, IC -- A
VBE(sat) -- IC
10
1.4
No
1.2
he
at
1.0
sin
k
0.8
0.6
0.4
25
20
15
10
5
0.2
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12873
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
ITR08449
No.686-4/5
2SB824 / 2SD1060
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No.686-5/5