2SB1740 Ordering number : ENA0474 SANYO Semiconductors DATA SHEET 2SB1740 PNP Epitaxial Planar Silicon Transistor Driver Applications Features • • • • Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit --160 V Collector-to-Emitter Voltage VCBO VCEO --120 V Emitter-to-Base Voltage VEBO --6 V IC --12 A ICP --20 A 3.0 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 75 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=--160V, IE=0A --0.1 mA Emitter Cutoff Current IEBO hFE1 VEB=--4V, IC=0A --0.1 mA VCE=--5V, IC=--1A 100 hFE2 VCE=--5V, IC=--5A 35 fT Cob VCE=--5V, IC=--1A DC Current Gain Gain-Bandwidth Product Output Capacitance VCB=--10V, f=1MHz 200 10 MHz 280 pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408DA TI IM TC-00001235 No. A0474-1/4 2SB1740 Continued from preceding page. Parameter Symbol Base-to-Emitterr Voltage Ratings Conditions min typ Unit max Collector-to-Base Breakdown Voltage VBE VCE(sat) V(BR)CBO VCE=--5V, IC=--5A IC=--5A, IB=--0.5A IC=--5mA, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage IC=--50mA, RBE=∞ IE=--5mA, IC=0A Turn-On Time V(BR)EBO ton Storage Time tstg See specified Test Circuit. 1.75 μs tf See specified Test Circuit. 0.25 μs Collector-to-Emitter Saturation Voltage Fall Time --1.5 --0.3 V V --160 V --120 V --6 V See specified Test Circuit. Package Dimensions --2.0 0.45 μs Switching Time Test Circuit unit : mm (typ) 7504-001 3.4 16.0 IB1 PW=20μs D.C.≤1% 5.6 OUTPUT IB2 3.1 RB VR 50Ω 4.0 2.8 2.0 1 2 + 100μF 470μF VBE= --5V 2.1 20.4 0.7 RL= 10Ω + 0.8 21.0 22.0 8.0 5.0 INPUT VCC= --50V IC= --10IB1=10IB2= --5A 0.9 3 5.45 3.5 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PMLH IC -- VCE --18 IC -- VBE --8 --400mA --12 --300mA --10 --200mA --8 --60mA --80mA --100mA --6 --40mA --20mA --4 --2 IB=0mA 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Collector-to-Emitter Voltage, VCE -- V --9 --10 IT13285 --6 --5 --4 20° C 25° C --40 °C --14 --7 --3 Ta= 1 --500mA Collector Current, IC -- A Collector Current, IC -- A VCE= --5V --16 --2 --1 0 0 --0.5 --1.0 --1.5 --2.0 Base-to-Emitter Voltage, VBE -- V IT13286 No. A0474-2/4 2SB1740 hFE -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=120°C DC Current Gain, hFE 25°C --40°C 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13287 Collector Current, IC -- A 3 2 --0.1 C 0° 12 = Ta C 0° --4 7 5 3 C 25° --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A ASO 5 5 7 --10 2 IT13288 PC -- Ta 3.5 ICP= --20A --10 7 5 IC= --12A PC =7 5W 3 2 DC --1.0 7 5 1m 3.0 s 10 100 ms ms op er Collector Dissipation, PC -- W 3 2 Collector Current, IC -- A 5 2 10 --0.01 ati 3 2 on --0.1 7 5 2.5 No he at sin k 2.0 1.5 1.0 0.5 3 2 Tc=25°C Single pulse --0.01 --1.0 2 0 3 5 7 --10 2 3 5 7 --100 2 Collector-to-Emitter Voltage, VCE -- V 3 IT13289 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11332 PC -- Tc 100 Collector Dissipation, PC -- W IC / IB=10 7 3 2 VCE(sat) -- IC --1.0 VCE= --5V 80 75 60 40 20 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11333 No. A0474-3/4 2SB1740 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A0474-4/4