SANYO CPH3249A

CPH3249A
Ordering number : ENA0902
SANYO Semiconductors
DATA SHEET
CPH3249A
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
•
•
•
•
High breakdown voltage.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
700
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
8
V
IC
1
A
2
A
Collector Current
Collector Current (Pulse)
ICP
IB
PW≤300µs, duty cycle≤10%
Base Current
Collector Dissipation
PC
Mounted on a ceramic board (600mm2✕0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
0.5
A
0.9
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
VCB=400V, IE=0A
VEB=5V, IC=0A
hFE1
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
hFE2
hFE3
Gain-Bandwidth Product
Output Capacitance
Conditions
fT
Cob
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
Ratings
min
typ
Unit
max
50
10
µA
10
µA
100
10
30
20
MHz
8
pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82207CB TI IM TC-00000847 No. A0902-1/4
CPH3249A
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
IC=1mA, IE=0A
IC=5mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
Collector-to-Base Breakdown Voltage
Turn-ON Time
ton
tstg
Storage Time
Fall Time
tf
typ
Unit
max
0.8
V
1.5
V
700
V
400
V
8
V
1.0
µs
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
2.5
µs
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
0.3
µs
Note : Since the above stated product is a high-voltage device, so please pay attention to its reliability when in use.
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7015A-005
0.6
2.9
OUTPUT
IB2
3
0.2
INPUT
VR
RB
RL
0.05
1.6
2.8
IB1
PW=20µs
D.C.≤1%
0.15
1
+
470µF
+
100µF
2
0.95
1 : BaseEmitter
2 : Emitter
3 : Collector
0.4
VBE= --5V
VCC=200V
0.9
0.2
0.6
50Ω
SANYO : CPH3
IC -- VCE
20
90mA 80mA 70mA
0.8
Collector Current, IC -- A
100mA
0.7
0.6
40mA
30mA
20mA
0.5
0.4
10mA
0.3
60mA
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
50mA
0.1
0.1
IB=0mA
0
0
1
2
3
4
5
6
7
8
9
Collector-to-Emitter Voltage, VCE -- V
0
0
10
0.2
0.4
0.6
0.8
1.0
100
3
2
V
C
2V E =5
7
DC Current Gain, hFE
Ta=120°C
25°C
--40°C
3
2
10
7
5
1.4
IT12776
hFE -- IC
2
VCE=5V
100
7
5
1.2
Base-to-Emitter Voltage, VBE -- V
IT12775
hFE -- IC
1000
7
5
DC Current Gain, hFE
VCE=5V
0.9
20°
C
25°C
--40°C
0m
A
Collector Current, IC -- A
0.9
IC -- VBE
1.0
150mA
Ta=
1
1.0
5
1V
V
0.7
V
3
2
10
7
5
3
2
1.0
0.001
3
2
3
5 7 0.01
2
3
5 7 0.1
Collector Current, IC -- A
2
3
5 7 1.0
IT12777
2
0.001
2
3
5 7 0.01
2
3
5 7 0.1
Collector Current, IC -- A
2
3
5 7 1.0
IT12778
No. A0902-2/4
CPH3249A
25
120
Ta=
0.1
7
5
°C
°C
0°C
--4
3
2
0.01
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
IT12779
Collector Current, IC -- A
3
2
1.0
7
5
3
C
20°
2
1
Ta=
0.001
3
2
25°C
1.0
Ta= --40°C
7
120°C
5
3
2
0.1
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
=1
s
s
s
m
10
1m
DC
0.1
7
5
3
2
op
er
0.01
7
5
ati
on
0.001
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
5
5 7 1.0
IT12780
tstg
3
2
2
3
5
7
1.0
IT12782
7
1000
IT12784
Reverse Bias A S O
1.0
7
5
3
2
0.1
7
5
2
2 3
Collector-to-Emitter Voltage, VCE -- V
5 7
IT12783
PC -- Ta
1000
7
3
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
3
2
3
2
µs
0µ
30
1.0
7
5
3
2
00
IC=1A
2
3
PT
ICP=2A
5 7 0.1
IC / IB1=10
IB2 / IB1=10
R load
5
Collector Current, IC -- A
3
2
3
Collector Current, IC -- A
Forward Bias A S O
5
2
SW Time -- IC
0.1
0.1
5 7 1.0
IT12781
Collector Current, IC -- A
5 7 0.01
tf
Switching Time, SW Time -- µs
5
3
1.0
IC / IB=5
7
2
Collector Current, IC -- A
VBE(sat) -- IC
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
0.1
0.001
Collector Current, IC -- A
IC / IB=20
--40
°C
1.0
7
5
3
2
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
VCE(sat) -- IC
10
IC / IB=5
25
°C
VCE(sat) -- IC
10
7
5
Tc=25°C
IB2= --0.2A
L=500µH
Single pulse
0.01
100
2
3
5
Collector-to-Emitter Voltage, VCE -- V
Collector Dissipation, PC -- W
900
M
ou
800
nt
ed
on
ac
er
600
am
ic
bo
ar
d
(6
00
400
m
m2
✕
0.
8m
200
m
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12785
No. A0902-3/4
CPH3249A
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0902-4/4