SCH1416 Ordering number : ENN7725 SCH1416 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±20 V 2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V 8 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±16V, VDS=0 20 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=1A 1.2 RDS(on)1 RDS(on)2 ID=1A, VGS=10V ID=0.5A, VGS=4V 120 160 mΩ 310 440 mΩ Input Capacitance Ciss 77 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 29 pF Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time td(on) tr VDS=10V, f=1MHz See specified Test Circuit. 6.5 ns See specified Test Circuit. 3 ns See specified Test Circuit. 10.5 ns See specified Test Circuit. 4.2 ns Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions td(off) tf 0.84 Marking : KR V 1 µA ±10 µA 2.6 1.4 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53104 TS IM TA-100780 No.7725-1/4 SCH1416 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=2A 2.9 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2A 0.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2A 0.4 Diode Forward Voltage VSD IS=2A, VGS=0 Package Dimensions unit : mm 2221 0.05 0.2 VDD=10V ID=1A RL=10Ω VOUT VIN 0.15 6 5 4 PW=10µs D.C.≤1% 1.5 1.6 V 10V 0V Side View D 0.05 1.2 Switching Time Test Circuit VIN Top View 1.6 nC 0.88 Bottom View 0.56 0.25 Side View G 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 2 3 0.5 1 P.G 50Ω SCH1416 S SANYO : SCH6 Ta= --25 °C 75° C VDS=10V V 4.0 0.8 1.4 1.2 1.0 0.8 0.6 3.0V 0.4 VGS=2.5V 0.2 0.4 5°C °C --2 5°C V 3.5 1.2 25 Drain Current, ID -- A 1.6 Ta= 7 6.0 10V 1.6 Drain Current, ID -- A V 1.8 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V IT06917 RDS(on) -- VGS 800 C ID -- VGS 2.0 25° ID -- VDS 2.0 4.5 IT06918 RDS(on) -- Ta 600 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 700 ID=1.0A 600 0.5A 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT06919 500 400 =4V , VGS .5A I D=0 300 200 0V , V S=1 I D=1.0A G 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT06920 No.7725-2/4 SCH1416 yfs -- ID 1.0 25 7 5 °C C 5° --2 °C = 75 Ta 3 2 0.1 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 3 2 2 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.3 5 0.4 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT06922 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=10V 2 0.5 Diode Forward Voltage, VSD -- V IT06921 SW Time -- ID 3 f=1MHz 2 100 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VGS=0 Ta= 75°C 25°C --25°C 2 IF -- VSD 10 7 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 5 tf 3 2 td(off) 10 td(on) 7 5 tr 3 100 Ciss 7 5 Coss 3 Crss 2 2 1.0 0.01 10 2 3 5 7 2 0.1 3 5 7 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A 2.5 3.0 Total Gate Charge, Qg -- nC 3.5 IT06925 PD -- Ta 1.0 0.8 n 2.0 s 0µ 3 2 io 1.5 s s 1.0 1m ID=2A at er 0.5 <10µs IDP=8A s 0 20 IT06924 m 0 18 ASO 1.0 7 5 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 16 op 2 14 C 3 12 0m 4 10 D 5 8 10 6 6 10 3 2 8 7 4 10 10 7 5 VDS=10V ID=2A 9 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Allowable Power Dissipation, PD -- W 0 1.0 IT06923 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT06926 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06927 No.7725-3/4 SCH1416 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. PS No.7725-4/4