SANYO TF202C

TF202C
Ordering number : ENA0727
SANYO Semiconductors
DATA SHEET
N-channel Silicon Junction FET
TF202C
Electret Condenser Microphone
Applications
Features
•
•
•
•
•
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Ultrasmall package permitting applied sets to be small and slim.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
VGDO
IG
Gate Current
Drain Current
Unit
--20
V
10
mA
1
mA
100
mW
Junction Temperature
ID
PD
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Symbol
Conditions
Ratings
min
Cutoff Voltage
V(BR)GDO
VGS(off)
IG=--100µA
VDS=5V, ID=1µA
--0.2
Drain Current
IDSS
VDS=5V, VGS=0V
140*
Marking: E
* : The TF202C is classified by IDSS as follows : (unit : µA)
Rank
E4
E5
IDSS
140 to 240
210 to 350
typ
max
--20
Unit
V
--0.6
--1.2
V
350*
µA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31407GB TI IM TC-00000549 No. A0727-1/5
TF202C
Continued from preceding page.
Parameter
Symbol
Forward Transfer Admittance
Ratings
Conditions
Input Capacitance
yfs
Ciss
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
min
typ
0.5
Unit
max
1.2
mS
3.5
pF
0.65
pF
[Ta=25˚C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV
∆GVV
∆Gvf
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
VIN=10mV, f=1kHz
--3.0
VIN=10mV, f=1kHz, VCC=4.5→1.5V
--1.2
dB
--3.5
f=1kHz to 110Hz
--1.0
f=1kHz
Output Impedance
ZIN
ZO
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A curve
dB
25
MΩ
f=1kHz
Package Dimensions
dB
1000
Ω
1.0
%
--110
dB
Test Circuit
unit : mm (typ)
7048-001
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Top View
0.11
3
1kΩ
VCC=1.5V
0.2
33µF
+
15pF
2
1
0.2
0.4
0.38
VTVM V
THD
OSC
1
0.15
1 : Drain
2 : Source
3 : Gate
SANYO : TSSFP
Bottom View
ID -- VDS
500
400
400
Drain Current, ID -- µA
450
350
300
VGS=0V
250
200
--0.1V
150
--0.2V
100
--0.3V
--0.4V
50
0
1
2
3
4
5
6
ID -- VDS
500
450
0
B A
Output Impedance
2
3
Drain Current, ID -- µA
VCC=4.5V
0 to 0.02
0.8
1.2
0.2
1.2
7
--0.5V
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
0
8
Drain-to-Source Voltage, VDS -- V
9
10
IT02310
0
1
2
3
--0.5V
4
Drain-to-Source Voltage, VDS -- V
5
IT03015
No. A0727-2/5
TF202C
360
400
320
200
ID
150
µA
50
2
µA
50
100
200
25
°C
µA
50
=3
SS
240
160
120
°C
300
280
75
350
VDS=5V
Ta
=
Drain Current, ID -- µA
Drain Current, ID -- µA
VDS=5V
450
250
ID -- VGS
400
80
5°
C
ID -- VGS
500
40
0
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
Gate-to-Source Voltage, VGS -- V
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
Gate-to-Source Voltage, VGS -- V
1.1
1.0
0.9
0.8
0.7
0.6
--0.1
--0
IT02313
VGS(off) -- IDSS
VDS=5V
ID=1µA
--0.65
--0.60
--0.55
--0.50
--0.45
--0.40
--0.35
0.5
--0.30
0
100
200
300
400
Drain Current, IDSS -- µA
500
IT02314
0
200
Allowable Power Dissipation, PD -- mW
250µA
150µA
I DSS=
350µA
1.0
300
400
0.1
500
IT02315
PD -- Ta
120
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
10
100
Drain Current, IDSS -- µA
THD -- VIN
100
Total Harmonic Distortion, THD -- %
--0.8
--0.70
VDS=5V
VGS=0V
f=1kHz
1.2
--0.9
IT02312
Cutoff Voltage, VGS(off) -- V
Forward Transfer Admittance, yfs -- mS
0
--1.0
0
yfs -- IDSS
1.3
100
80
60
40
20
0
0
50
100
150
Input Voltage, VIN -- mV
200
0
20
40
Reverse Transfer Capacitance, Crss -- pF
10
7
5
3
2
1.0
80
100
120
140
160
IT02317
Crss -- VDS
5
VGS=0V
f=1MHz
60
Ambient Temperature, Ta -- °C
IT02316
Ciss -- VDS
2
Input Capacitance, Ciss -- pF
--2
1
50
VGS=0V
f=1MHz
3
2
1.0
7
5
3
2
0.1
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
ITR03814
7
1.0
2
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
3
ITR03815
No. A0727-3/5
TF202C
GV : VCC=4.5V
VIN=10mV
RL=1.0kΩ
f=1kHz
IDSS : VDS=5.0V
--1
--2
--3
--4
--5
--6
--7
0
100
200
300
400
Drain Current, IDSS -- µA
Total Harmonic Distortion, THD -- %
THD : VCC=4.5V
VIN=30mV
f=1MHz
IDSS : VDS=5.0V
2.0
1.5
1.0
0.5
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
--0.7
--0.9
--1.1
--1.3
--1.5
--1.7
100
200
300
400
Drain Current, IDSS -- µA
500
IT02321
ZIN -- IDSS
32
Zi : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
31
30
29
28
27
26
0
0
100
200
300
400
Drain Current, IDSS -- µA
0
500
IT02322
930
920
910
300
400
500
IT02323
VNO : VCC=4.5V
VIN=0V, ACurve
RL=1.0kΩ
IDSS : VDS=5.0V
--112
Output Noise Voltage, VNO -- dB
940
200
VNO -- IDSS
--111
ZO : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
950
100
Drain Current, IDSS -- µA
ZO -- IDSS
960
Output Impedance, ZO -- Ω
∆GVV : VCC=4.5V→1.5V
0
THD -- IDSS
2.5
∆GVV -- IDSS
--0.5
500
IT02320
Input Impedance, ZIN -- MΩ
Voltage Gain, GV -- dB
Reduced Voltage Characteristics, ∆GVV -- dB
GV -- IDSS
0
--113
--114
--115
--116
--117
--118
--119
900
--120
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT02324
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT02325
No. A0727-4/5
TF202C
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0727-5/5