EC3A04B Ordering number : ENA0509B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features • • • • Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Symbol Conditions Ratings VDSX VGDS Unit 30 V --30 V IG ID 10 mA 10 mA 100 mW Junction Temperature PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Gate Current Drain Current Allowable Power Dissipation Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Symbol Conditions V(BR)GDS IGSS IG=--10μA, VDS=0V Gate-to-Source Leakage Current Cutoff Voltage VGS(off) VDS=10V, ID=1μA Ratings min typ max --30 V VGS=--20V, VDS=0V Marking : KC --0.18 Unit --0.65 --1.0 nA --2.2 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21209 MS IM TC-00001840 / 41608 TI IM TC-00001316 / 70407GB TI IM TC-00000742 No. A0509-1/4 EC3A04B Continued from preceding page. Parameter Symbol Drain Current Ratings Conditions min Unit max Input Capacitance IDSS ⏐yfs⏐ Ciss pF Crss VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz 4 Reverse Transfer Capacitance 1.1 pF Static Drain-to-Source On-State Resistance RDS(on) VDS=10mV, VGS=0V 200 Ω Forward Transfer Admittance VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz typ 0.6* 3.0 3.0* 5.0 mA mS * : The EC3A04B is classified by IDSS as follows : (unit : mA). Rank 2 3 IDSS 0.6 to 1.5 1.2 to 3.0 Package Dimensions unit : mm (typ) 7039A-004 0.6 Polarity discriminating mark 3 1.0 2 0.025 0.5 1 0.5 0.25 0.65 1 2 3 0.15 0.35 1 : Gate 2 : Source 3 : Drain SANYO : ECSP1006-3 Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) KC Polarity mark (Top) Source Gate Gate Drain Source *Electrodes : Bottom Drain No. A0509-2/4 EC3A04B ID -- VDS 2.0 VGS=0V 1.5 --0.1V Drain Current, ID -- mA Drain Current, ID -- mA 2.5 --0.2V 1.0 --0.3V --0.4V 0.5 0 0 1 2 ID -- VDS 3.0 3 VGS=0V 2.0 --0.1V 1.5 --0.2V 1.0 --0.3V --0.4V 0.5 4 Drain-to-Source Voltage, VDS -- V 2.5 0 0 5 5 ID -- VGS 10 15 25 30 IT11451 ID -- VGS 5 VDS=10V 20 Drain-to-Source Voltage, VDS -- V IT11450 5 VDS=10V 4 2 mA .0 =3 S S ID mA 2.0 --2 5° C 2 1 1 C 75° mA 1.0 25 0 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, ⏐yfs⏐ -- mS 5 3 1.0 2 3 Drain Current, IDSS -- mA 7 5 3 2 A 3.0m 7 5 3 mA =2.0 I DSS A 1.0m 2 1.0 7 5 3 2 3 5 7 1.0 2 3 Drain Current, ID -- mA 5 7 1.0 2 Drain Current, IDSS -- mA 3 5 IT11455 5 IT11454 IGDL -- VDS IGDL 3 10n D S G 3 ID DC DC 1n 3 100p 3 10p 3 1p 5 1.0 ITR00636 10 100n 10 0 0 --0.2 VDS=10V f=1kHz IT11453 VDS=10V VGS=0V f=1kHz --0.4 ⏐yfs⏐ -- ID 2 0.1 5 ⏐yfs⏐ -- IDSS 2 --0.6 °C Gate-to-Source Voltage, VGS -- V Gate-to-Drain Leak Current, IGDL -- A Cutoff Voltage, VGS(off) -- V 7 7 --0.8 2 --1.0 2 5 --1.0 IT11452 VDS=10V ID=1.0μA Forward Transfer Admittance, ⏐yfs⏐ -- mS --1.2 0 VGS(off) -- IDSS 2 3 Ta = 3 Drain Current, ID -- mA 4 ID=1mA 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 ITR00640 No. A0509-3/4 Drain Current, ID -- mA 3.0 EC3A04B Ciss -- VDS 10 Crss -- VDS 5 VGS=0V f=1MHz VGS=0V f=1MHz Output Capacitance, Crss -- pF Input Capacitance, Ciss -- pF 7 5 3 2 1.0 2 1.0 7 5 5 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 3 5 IT11456 PD -- Ta 120 Allowable Power Dissipation, PD -- mW 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT11457 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR00646 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No. A0509-4/4