MCH5908 Ordering number : ENA1218 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET MCH5908 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting efficiency greatly. The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Voltage Symbol Conditions Ratings VDSX VGDS IG ID Drain Current Allowable Power Dissipation Total Power Dissipation PD PT Junction Temperature Tj Storage Temperature Tstg Unit 15 1 unit V --15 V 10 mA 50 mA 200 mW 300 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Symbol Conditions Ratings min IG=--10μA, VDS=0V Cutoff Voltage V(BR)GDS IGSS VGS(off) VDS=5V, ID=100μA --0.3 Drain Current IDSS VDS=5V, VGS=0V 10.0* Gate-to-Source Leakage Current typ max --15 V VGS=--10V, VDS=0V The specifications shown above are for each individual J-FET. * : The MCH5908 is classified by IDSS as follows (unit : mA). Marking KG KH Rank G H IDSS(mA) 10 to 20 16 to 32 Unit --1.0 --0.7 nA --1.5 V 32.0* mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22410AC TK IM TC-00002292 No. A1218-1/4 MCH5908 Continued from preceding page. Parameter Symbol Forward Transfer Admittance Ratings Conditions min Input Capacitance ⏐yfs⏐ Ciss Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz Package Dimensions 24 4 35 mS 10.5 pF 3.5 pF 1.0 dB 2.0 0.15 1 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 Rank 5 K 0.25 Unit max Marking unit : mm (typ) 7021A-009 5 typ 2 3 4 2.1 1.6 0 to 0.02 0.25 1 2 3 0.65 0.07 0.85 0.3 1 2 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 3 5 SANYO : MCPH5 4 Electrical Connection 4 5 1 2 1 : Drain1 2 : Source1/Source2 3 : Drain2 4 : Gate2 5 : Gate1 3 Top view ID -- VDS 20 ID -- VDS 20 VGS=0V 16 V V GS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V 4 --0.6V 12 --0.2V 8 --0.3V --0.4V 4 --0.4V --0.7V --0.1V --0.5V --0.5V --0.6V --0.7V 0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-to-Source Voltage, VDS -- V 2.4 ITR02749 0 2 4 6 8 10 Drain-to-Source Voltage, VDS -- V 12 ITR02750 No. A1218-2/4 MCH5908 ID -- VGS 22 20 ID -- VGS 16 VDS=5V VDS=5V IDSS=15mA 14 10 °C 8 6 4 25 6 10 75° C 8 20 m 15 A mA 10 mA 12 °C 30 mA 14 12 Ta =-25 Drain Current, ID -- mA 16 ID SS = Drain Current, ID -- mA 18 4 2 2 0 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, ⏐yfs⏐ -- mS A 30m A 15m 3 = I DSS 2 --0.8 10 7 5 3 --0.6 --0.4 --0.2 0 Gate-to-Source Voltage, VGS -- V VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 2 1.0 3 5 7 2 10 3 Drain Current, ID -- mA 5 7 3 5 Drain Current, IDSS -- mA 2 IT04226 10 IT04225 VGS(off) -- IDSS 3 Ciss -- VDS 3 VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V VDS=5V ID=100μA 1.0 7 5 3 7 2 3 5 Drain Current, IDSS -- mA IT04227 10 2 10 7 5 3 1.0 2 3 5 7 VDS=5V ID=1mA Rg=1kΩ 7 Noise Figure, NF -- dB 8 3 2 3 IT13691 NF -- f 10 VGS=0V f=1MHz 5 2 10 Drain-to-Source Voltage, VDS -- V Crss -- VDS 10 Reverse Transfer Capacitance, Crss -- pF 0.2 ITR02752 ⏐yfs⏐ -- IDSS 100 VDS=5V f=1kHz 5 --1.0 IT04224 ⏐yfs⏐ -- ID 7 Forward Transfer Admittance, ⏐yfs⏐ -- mS 0 --1.2 0.2 6 4 2 1.0 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13692 0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Frequency, f -- kHz 2 3 5 7100 ITR02758 No. A1218-3/4 MCH5908 VDS=5V ID=1mA f=1kHz Noise Figure, NF -- dB 8 6 4 2 0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Signal Source Resistance, Rg -- kΩ 2 3 5 71000 ITR02759 Allowable Power Dissipation, PT, PD -- mW NF -- Rg 10 PT, PD -- Ta 350 300 PT Total power dissipation 250 200 PD 1unit 150 100 50 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15408 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice. PS No. A1218-4/4