TF252TH Ordering number : ENA0842A SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF252TH Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristics Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings Gate Current Drain Current ID PD Allowable Power Dissipation Junction Temperature Tj Storage Temperature Tstg 0.2 TF252TH-4-TL-H TF252TH-5-TL-H Packing Type: TL 1 mA 100 mW °C • Package : VTFP • JEITA, JEDEC : SC-106A • Minimum Packing Quantity : 8,000 pcs./reel 0.1 mA °C Product & Package Information 0.25 V 10 150 unit : mm (typ) 7031A-001 1.4 --20 --55 to +150 Package Dimensions Marking 3 0.2 1 2 RANK D LOT No. LOT No. 0.8 0 to 0.02 TL 0.2 0.45 0.34 Electrical Connection 0.07 1 0.07 1.2 Unit VGDO IG 1 2 3 1 : Drain 2 : Source 3 : Gate 3 SANYO : VTFP 2 http://semicon.sanyo.com/en/network 53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7 TF252TH Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Conditions Ratings min V(BR)GDO VGS(off) IG=--100μA VDS=2V, ID=1μA --0.1 VDS=2V, VGS=0V 140* Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss typ Unit max --20 VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz 0.8 V --0.4 --1.0 V 350* μA 1.4 mS 3.1 pF 0.95 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] GV ΔGVV VIN=10mV, f=1kHz Reduced Voltage Characteristic Voltage Gain Frequency Characteristic ΔGvf f=1kHz to 110Hz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A curve 1.0 VIN=10mV, f=1kHz, VCC=2.0V → 1.5V --0.6 dB --2.0 dB --1.0 dB --102 dB 0.65 --106 % * : The TF252TH is classified by IDSS as follows : (unit : μA) Rank IDSS 4 140 to 240 5 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ VCC=2V VCC=1.5V 5pF 33μF + VTVM V THD OSC Ordering Information Package Shipping TF252TH-4-TL-H Device VTFP 8,000pcs./reel TF252TH-5-TL-H VTFP 8,000pcs./reel memo Pb Free and Halogen Free No. A0842-2/7 TF252TH ID -- VDS 300 V GS=0V 200 --0.05V 150 --0.10V 100 --0.15V --0.25V 250 200 --0.1V 150 100 --0.2V --0.20V --0.30V 50 V V GS=0 300 Drain Current, ID -- μA 250 Drain Current, ID -- μA ID -- VDS 350 50 --0.4V --0.3V 0 0 0 0.5 1.0 1.5 2.0 Drain-to-Source Voltage, VDS -- V 0 ID -- VGS 400 1 IT12440 4 5 Drain-to-Source Voltage, VDS -- V 2 3 IT12441 ID -- VGS 400 VDS=2V 350 300 300 50 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V --0.5 --0.4 --0.3 --0.2 °C 25 --0.1 Gate-to-Source Voltage, VGS -- V VDS=2V ID=1μA Cutoff Voltage, VGS(off) -- V --0.55 1.5 1.4 1.3 1.2 1.1 0 IT12443 VGS(off) -- IDSS --0.60 VDS=2V VGS=0V f=1kHz 1.6 0 --0.6 0 IT12442 | yfs | -- IDSS 1.7 Forward Transfer Admittance, | yfs | -- mS 100 50 0 --0.6 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 1.0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA --0.20 100 400 150 Reverse Transfer Capacitance, Crss -- pF 7 5 3 2 250 300 350 400 IT12445 Crss -- VDS 3 VGS=0V f=1MHz 200 Zero-Gate Voltage Drain Current, IDSS -- μA IT12444 Ciss -- VDS 10 Input Capacitance, Ciss -- pF 150 5° C 100 200 --2 15 25 0μ A A 150 0μ S =3 50 200 250 75 °C μA 250 Ta = Drain Current, ID -- μA 350 ID S Drain Current, ID -- μA VDS=2V VGS=0V f=1MHz 2 1.0 7 5 3 1.0 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT12446 5 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 3 IT12447 No. A0842-3/7 TF252TH GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.6 1.4 Voltage Gain, GV -- dB Reduced Voltage Characteristic, ΔGVV -- dB GV -- IDSS 1.8 1.2 1.0 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 3 2 350μA 1.0 7 5 3 2 0.1 0 50 100 150 Input Voltage, VIN -- mV Allowable Power Dissipation, PD -- mW 200 IT12450 PD -- Ta 120 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % 7 5 --0.4 400 IT12449 THD -- IDSS 1.4 THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF 50μA IDSS : VDS=2V I DSS=1 A 250μ 10 ΔGVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.3 IT12448 THD -- VIN 2 Total Harmonic Distortion, THD -- % 400 ΔGVV -- IDSS --0.2 THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.2 1.0 0.8 0.6 0.4 0.2 0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 400 IT12451 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12453 No. A0842-4/7 TF252TH Taping Specification TF252TH-4-TL-H, TF252TH-5-TL-H No. A0842-5/7 TF252TH Outline Drawing TF252TH-4-TL-H, TF252TH-5-TL-H Land Pattern Example Mass (g) Unit 0.0012 mm * For reference Unit: mm 1.1 0.4 0.5 0.45 0.45 0.45 0.45 No. A0842-6/7 TF252TH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. A0842-7/7