2SK3796 Ordering number : EN8636 SANYO Semiconductors DATA SHEET 2SK3796 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications. Features • • Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 30 V Gate-to-Drain Voltage VGDS --30 V IG ID 10 mA Drain Current 10 mA Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Gate Current Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS Gate-to-Source Leakage Current IGSS Cutoff Voltage Marking : K VGS(off) Conditions IG=--10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1µA Ratings min typ max --30 --0.18 Unit V --0.95 --1.0 nA --2.2 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32207GB TI IM TC-00000609 No.8636-1/4 2SK3796 Continued from preceding page. Parameter Symbol Drain Current Ratings Conditions min Unit max Input Capacitance IDSS yfs Ciss VDS=10V, VGS=0V, f=1MHz 4 pF Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 1.1 pF VDS=10mV, VGS=0V 200 Ω Forward Transfer Admittance Static Drain-to-Source On-State Resistance VDS=10V, VGS=0V typ 0.6* VDS=10V, VGS=0V, f=1kHz RDS(on) 6.0* 3.0 mA 6.5 mS * : The 2SK3796 is classified by IDSS as follows : (unit : mA). Rank 2 3 4 IDSS 0.6 to 1.5 1.2 to 3.0 2.5 to 6.0 Package Dimensions unit : mm (unit) 7027-003 1.6 0.8 0.4 0.3 1 2 0.1 3 0 to 0.1 0.75 0.6 1.6 0.5 0.5 0.2 0.4 0.1 MIN 1 : Source 2 : Drain 3 : Gate SANYO : SMCP ID -- VDS 5.0 4 3.0 VGS=0V 2.0 --0.1V Drain Current, ID -- mA 4.0 --0.2V --0.3V 1.0 VGS=0V 3 --0.1V 2 --0.2V --0.3V 1 --0.4V --0.4V 0 0 1.0 2.0 3.0 4.0 Drain-to-Source Voltage, VDS -- V 0 5.0 0 ID -- VGS 5 10 20 25 30 ITR00634 ID -- VGS 8 VDS=10V 15 Drain-to-Source Voltage, VDS -- V ITR00633 5 VDS=10V A .0m =5 SS ID 2 mA °C 2 3.0 A --1.25 --1.00 --0.75 --0.50 --0.25 Gate-to-Source Voltage, VGS -- V 1 C 75° °C 1.0m --1.50 3 Ta =-25 4 0 ITR00635 0 25 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V 0 0 ITR00636 No.8636-2/4 Drain Current, ID -- mA 4 6 Drain Current, ID -- mA Drain Current, ID -- mA ID -- VDS 5 2SK3796 VGS(off) -- IDSS 3 2 --1.0 7 5 3 2 5 7 2 1.0 3 5 7 5 3 2 7 2 1.0 3 5 7 A .0m =1 SS 3 ID 2 1.0 7 5 3 2 3 5 7 2 1.0 3 5 7 10 IGDL 3 10n D S G 3 DC DC 1n 3 100p 3 10p 3 ID=1mA 0 5 10 15 20 VGS=0V f=1MHz Output Capacitance, Crss -- pF 7 2 10 7 5 3 2 25 ITR00640 Crss -- VDS 10 VGS=0V f=1MHz 3 ID Drain-to-Source Voltage, VDS -- V Ciss -- VDS 2 ITR00638 IGDL -- VDS ITR00639 3 Input Capacitance, Ciss -- pF 5 1p 5 2 10 Drain Current, IDSS -- mA 5 m 3.0 Drain Current, ID -- mA Gate-to-Drain Leak Current, IGDL -- A Forward Transfer Admittance, yfs -- mS 7 5 A .0m A 5 7 100n VDS=10V VGS=0V f=1kHz 10 1.0 10 ITR00637 yfs -- IDSS 2 VDS=10V f=1kHz 2 0.1 2 10 Drain Current, IDSS -- mA 3 yfs -- ID 2 VDS=10V ID=1.0µA Forward Transfer Admittance, yfs -- mS Cutoff Voltage, VGS(off) -- V 5 5 3 2 1.0 7 5 3 1.0 7 2 1.0 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 7 PD -- Ta 120 Allowable Power Dissipation, PD -- mW 5 ITR00641 2 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 ITR00642 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR00646 No.8636-3/4 2SK3796 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No.8636-4/4