TF256 Ordering number : ENA1616A SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET TF256 Electret Condenser Microphone Applications Features • • • • • • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)] Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage VGDO Gate Current IG Drain Current ID 1 mA Allowable Power Dissipation PD 30 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7055-001 • Package : USFP • JEITA, JEDEC :• Minimum Packing Quantity : 10,000 pcs./real --20 V 10 mA 0.6 0.1 0.2 0.11 3 Packing Type: TL Marking 3 2 TL 0.15 N LOT No. 1 LOT No. 0.1 1.0 0.8 0 to 0.02 0.175 2 3 0.05 1 0.05 0.27 1 2 Electrical Connection 1 : Drain 2 : Source 3 : Gate SANYO : USFP 1 3 2 http://semicon.sanyo.com/en/network 10511 TKIM TC-00002534/N2509GB TKIM TC-00002096 No. A1616-1/5 TF256 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDO VGS(off) Cutoff Voltage Drain Current IDSS Ratings Conditions Rank IG=--100μA VDS=2V, ID=1μA min typ Unit max --20 --0.1 VDS=2V, VGS=0V Forward Transfer Admittance | yfs | VDS=2V, VGS=0V, f=1kHz Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz V --0.35 --1.0 3 100 180 4 140 280 5 240 450 0.75 V μA 1.7 mS 3.1 pF 1.0 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV Reduced Voltage Characteristic VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=2.0V → 1.5V ΔGVV Frequency Characteristic THD Output Noise Voltage 1.0 4 2.0 5 3.0 3 --0.5 --1.0 4 --0.6 --1.3 5 --0.9 --2.0 3 1.4 dB f=1kHz to 110Hz ΔGvf Total Harmonic Distortion 3 --1.0 VIN=30mV, f=1kHz VNO dB VIN=0V, A curve 4 0.9 5 0.35 dB % --105 --100 dB Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ VCC=2.0V VCC=1.5V 33μF + 5pF VTVM V THD OSC ID -- VDS 150 --0.15V --0.20V --0.25V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 0μ A 250 200 150 0μ A --0.10V 300 30 200 350 S= 45 Drain Current, ID -- μA --0.05V 100 VDS=2V 400 300 250 ID -- VGS 450 V GS=0V 350 Drain Current, ID -- μA 500 ID S 400 0μ 100 --0.30V 4.5 5.0 IT15213 A 15 50 A 0μ 10 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V 0 IT16271 No. A1616-2/5 TF256 ID -- VGS 450 Forward Transfer Admittance, | yfs | -- mS 350 300 250 25 °C 75 °C 200 Ta = Drain Current, ID -- μA 400 150 100 5 --2 50 °C 0 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 --0.10 --0.05 Gate-to-Source Voltage, VGS -- V 1.5 1.0 0.5 100 150 200 250 300 350 400 450 Drain Current, IDSS -- μA 500 IT16272 Ciss -- VDS 10 VGS=0V f=1MHz 7 0.40 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 2.0 0 50 0 VDS=2V ID=1μA 0.45 VDS=2V VGS=0V f=1kHz IT15215 VGS(off) -- IDSS 0.50 | yfs | -- IDSS 2.5 VDS=2V 0.35 0.30 0.25 0.20 0.15 0.10 5 3 2 0.05 0 50 100 150 200 250 300 350 400 450 Drain Current, IDSS -- μA 3.0 7 5 2 1.0 3 5 7 2 10 IT15218 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 2 1.0 7 GV -- IDSS 3.5 Voltage Gain, GV -- dB Reverse Transfer Capacitance, Crss -- pF 5 Drain-to-Source Voltage, VDS -- V VGS=0V f=1MHz 2.5 2.0 1.5 1.0 0.5 0 3 3 5 7 2 1.0 3 5 7 10 Drain-to-Source Voltage, VDS -- V GV : VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF 5 450μA I DSS= 300μA 3 100μA 1 0 3 4 Supply Voltage, VCC -- V 5 6 IT16275 400 450 500 IT16274 450μA I DSS= 300μA 150μA 100μA --2 --4 --8 2 350 0 --6 1 300 2 --2 0 250 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ 4 --1 --3 200 GV -- Cin 6 150μA 2 150 10 8 4 100 Drain Current, IDSS -- μA Voltage Gain, GV -- dB 6 --0.5 50 2 IT15219 GV -- VCC 7 Voltage Gain, GV -- dB 3 IT16273 Crss -- VDS 3 1.0 500 --10 0 2 4 6 8 10 12 Electret Capacitance, Cin -- pF 14 16 IT16276 No. A1616-3/5 ΔGVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 50 100 150 200 250 300 350 400 Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 150 200 250 300 350 Drain Current, IDSS -- μA THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF 3 2 100μ I DSS= 10 7 5 A 150μ 3 2 1.0 7 5 400 450 500 IT16279 A A 300μ A 450μ 3 2 0.1 500 THD -- VIN 100 7 5 0 50 100 150 Input Voltage, VIN -- mV IT16277 THD -- IDSS 2.4 450 Total Harmonic Distortion, THD -- % ΔGVV -- IDSS 0 PD -- Ta 35 Allowable Power Dissipation, PD -- mW Reduced Voltage Characteristic, ΔGVV -- dB TF256 200 IT16278 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15226 No. A1616-4/5 TF256 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2011. Specifications and information herein are subject to change without notice. PS No. A1616-5/5