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M600GA124.XLS-1
4500
M600GA124.XLS-2
140
W
4000
mWs
120
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3500
100
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3000
2500
80
2000
60
+/
+
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1500
40
1000
20
500
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E
0
0
0
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20
40
60
80
100
120
140
0
160
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1000
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M600GA124.XLS-4
M600GA124.XLS-3
140
500
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10000
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1000
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100
100µs
10
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100
80
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M600GA124.XLS-5
2,5
M600GA124.XLS-6
12
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di/dt=1000 A/µs
3000 A/µs
5000 A/µs
8
1,5
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6
4
allowed numbers of
short circuits: <1000
2
time between short
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1
0,5
ICpuls/IC
ICSC/IC
0
0
0
200
VCE
400
600
800
1000 1200 1400
V
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200
400
600
800
1000 1200 1400
V
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M600GA124.XLS-8
800
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700
600
500
400
300
200
100
IC
0
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20
40
60
80
100
120
140
160
°C
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M600GA124.XLS-9
1200
M600GA124.XLS-10
1200
A
A
17V
15V
13V
11V
9V
7V
1000
800
1000
17V
15V
13V
11V
9V
7V
800
600
600
400
400
200
IC
200
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0
0
0
VCE
1
2
3
4
V
5
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3
4
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M600GA124.XLS-12
1200
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1000
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800
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600
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8
10
12
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M600GA124.XLS-14
M600GA124.XLS-13
20
ICpuls = 400 A
V
18
100
nF
16
VGE = 0 V
f = 1 MHz
Cies
600
14
800V
12
10
10
Coes
8
6
4
VGE
C
Cres
2
1
0
0
QGate
1000
2000
3000
0
4000
nC
Fig. 13 Typ. gate charge characteristic
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
RGon = 4 Ω
RGoff = 4 Ω
induct. load
ns
tdoff
1000
20
V
30
Fig. 14 Typ. capacitances vs.VCE
M600GA124.XLS-15
10000
10
VCE
M600GA124.XLS-16
10000
ns
Tj = 125 °C
VCE = 600 V
VGE = ± 15 V
IC = 400 A
induct. load
tdoff
1000
tdon
tr
tdon
100
tr
tf
100
tf
t
t
10
10
0
200
IC
400
600
800
2
1000
Fig. 15 Typ. switching times vs. IC
4
6
8
Fig. 16 Typ. switching times vs. gate resistor RG
M600GA124.XLS-18
40
mJ
Tj=125°C, typ.
A
VCC = 600 V
Tj = 125 °C
VGE = ± 15 V
R G=
35
Tj=25°C, typ.
600
12
Ω
M600GA124.XLS-17
800
10
RG
A
Tj=125°C,
max.
Tj=25°C, max.
400
30
4Ω
25
5Ω
20
10 Ω
15
200
10
IF
EoffD
0
5
0
0
VF
1
2
3
Fig. 17 Typ. CAL diode forward characteristic
8
0
V
IF
200
400
600
800
1000
A
Fig. 18 Diode turn-off energy dissipation per pulse
SKM 600 GA 124 D
M600GA124.XLS-19
0,1
M600GA124.XLS-20
0,1
K/W
K/W
0,01
0,01
0,001
D=0,50
0,20
0,10
0,05
0,02
0,01
0,0001
single pulse
D=0,5
0,2
0,1
0,05
0,02
0,01
0,001
single pulse
ZthJC
ZthJC
0,00001
0,00001 0,0001
tp
0,001
0,01
0,1
0,0001
0,00001
1
s
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
M600GA124.XLS-22
500
RG
A
4Ω
400
tp
0,0001
0,001
0,01
0,1
1
s
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
M600GA124.XLS-23
600
+
+/
+9
+
+/
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RG
500
4Ω
5Ω
400
10 Ω
300
5Ω
300
10 Ω
200
200
100
100
IRR
IRR
0
0
0
200
400
600
800
IF
0
1000
A
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
M600GA124.XLS-24
120
µC
R G=
100
IF=
5
4Ω
800 A
diF/dt
2000
4000
6000
8000
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery
current IRR = f (diF/dt; RG)
+
+/
+9
10 Ω
80
400 A
60
300 A
200 A
40
100 A
20
Qrr
0
0
1000
diF/dt
2000
3000
4000
5000
6000
A/µs
Fig. 24 Typ. CAL diode recovered charge
QRR = f (diF/dt; IF; RG
© by SEMIKRON
010502
B 6 – 35
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