SC2608 Simple, Synchronous Voltage Mode PWM Controller POWER MANAGEMENT Description Features SC2608 features include temperature compensated volt- age reference, triangle wave oscillator, current limit com- parator, and an externally compensated error amplifier. The SC2608 is a versatile voltage-mode PWM controller designed for use in step down DC/DC power supply applications. A simple, fixed frequency, highly efficient buck regulator can be implemented using the SC2608 with minimal external components. The input voltage range is from +3.3V to +12V. Internal level shift and drive circuitry eliminates the need for an expensive P-channel, high-side MOSFET. The small device footprint allows for compact circuit design. Current limit is implemented by sensing the voltage drop across the bottom MOSFET RDS(ON). +3.3V or +5V or +12V input voltage 200kHz operation High efficiency (>90%) 1% Reference voltage accuracy Hiccup mode over current protection Robust output drive RDS(ON) Current sensing for protection Industrial temperature range SO-8 package Integrated boot strap diode Thermal Shut down Fully WEEE and RoHS Compliant Applications The SC2608 operates at a fixed frequency of 200kHz providing an optimum compromise between efficiency , external component size, and cost. SC2608 has a thermal protection circuit, which is activated if the junction temperature exceeds 150 OC. Termination supplies Low cost microprocessor supplies Peripheral card supplies Industrial power supplies High density DC/DC conversion Typical Application Circuit SC2608 sense COMP/SS SENSE +12V/+5V/+3.3V +12V GND VCC DL PHASE DH BST VOUT sense Figure 1 Revision 4: October, 2005 1 www.semtech.com SC2608 POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. P a r a met er M a xi m u m Un i ts VCC to GND +20 V BST to PHASE +15 V BST to GND +35 V -1 to +24 V +15 V -1 to +15 V COMP/SS to GND +7 V SENSE to GND +7 V PHASE to GND Symb ol (note1) DH to PHASE DL to GND (note1) Thermal Resistance Junction to Case θJC 40 O C/W Thermal Resistance Junction to Ambient θJA 163 O C/W Operating Temperature Range TJ -40 to +125 O C Storage Temperature Range TSTG -65 to +150 O C ESD Rating (Human Body Model) ESD 2 kV Note 1: Under pulsing condition, the peak negative voltage can not be lower than -3.6V. Electrical Characteristics Unless specified: VCC = 12V, VBST - VPhase = 12 V, VOUT = 3.3V, TJ = TA = 25oC. P a r a met er Symb ol C on d i t i on s Mi n Ty p Ma x Un i ts 14 V P ower Su p p l y Supply Voltage VCC Supply Current IC C 4.5 VCOMP < 0.4V 6 mA E r r or A mp l i f i er E/A Transconductance Gm 7 mS Open Loop DC Gain AO 60 dB Input Bias Current IFB 1 Output Sink Current ISINK VSENSE > 0.9V; VCOMP = 2.1V -700 uA Output Source Current ISOURCE VSENSE < 0.7V; VCOMP = 2.1V 120 uA 3 uA O sci l l a t or Switching Frequency © 2005 Semtech Corp. FOSC Vcc =12V 2 180 200 220 kHz www.semtech.com SC2608 POWER MANAGEMENT Electrical Characteristics Unless specified: VCC = 12V, VBST - VPhase = 12 V, VOUT = 3.3V, TJ = TA = 25oC. P a r a met er Symb ol C on d i t i on s Mi n Ty p Ma x Un i ts Ramp Peak Voltage VP-K 4.75V < VCC < 12.6V 1.8 V Ramp Valley Voltage VV 4.75V < VCC < 12.6V 0.8 V Maximum Duty Cycle DMAX 200kHz 90 % DH Sink/Source Current ID H tPW > 400nS VGS = 4.5V (src) 0.6 0.8 A DL Sink/Source Current ID L VGS = 2.5V (snk) 0.6 0.7 DH Rise/Fall Time tr, tf CL = 3000pF, See Fig. 2 50 ns DL Rise/Fall Time tr, tf CL = 4000pF, See Fig. 2 50 ns Dead Time tdt See Fig. 2 80 ns DL Minimum On Time tON 4.75V < Vcc < 12.6V 400 ns Reference Voltage VREF VCC = 12V 0 .7 9 2 Temp Variance ∆VREF -40 < TJ < +125 OC -1.5 Line Variance ∆VREF 4.75V < VCC <12.6V VTRIP 4.75V < Vcc < 12.6V Vtrip = VPHASE - GND SS Source Current ISRC VCOMP < 2.5V 1.5 uA SS Sink Current ISNK VCOMP > 0.5V -1.5 uA UVLO Threshold Vth -40< TJ < 85OC UVLO Hysterisis Vhys -40< TJ < 85OC M O SF E T D r i v er s A Ref er en ce Sect i on 0.8 0.808 V 1.5 % 4 mV -130 mV C u r r en t L i mi t Trip Voltage -190 -160 Sof t - St a r t U n d er v ol t a g e L ock ou t 4.1 4.3 200 4.5 V mV T h er ma l Sh u t d own Over Temperature Trip Point © 2005 Semtech Corp. 150 TOTP 3 C o www.semtech.com SC2608 POWER MANAGEMENT Gate Drive Timing Diagram Figure 2 Block Diagram BST VCC LEVEL SHIFT OSC DH S REF 0.8V + E/A R - + SENSE PHASE PWM - NON-OVERLAP TIMING Q 0 VCC Vcc OCP & UVLO DL OCP 0 + - GND PHASE 0 0 COMP/SS Figure 3 © 2005 Semtech Corp. 4 www.semtech.com SC2608 POWER MANAGEMENT Pin Configuration Ordering information Top View Device 8 BST 1 DH 2 7 COMP/SS GND 3 6 SENSE DL 4 5 VCC (1) Package Temp Range (TJ) SO-8 -40 to 125OC SC2608STRT(2) PHASE SC2608EVB Evaluation Board Notes: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) This device is fully WEEE and RoHS Compliant (8-Pin SO-8) Pin Descriptions Pin # P i n N am e 1 BST Bootstrap for high side driver. 2 DH High side driver outp ut. 3 GN D 4 DL Low side driver outp ut. 5 VCC Chip bias sup p ly p in. 6 Sense 7 COMP/SS 8 PHASE © 2005 Semtech Corp. P i n Fu n c t i o n Ground. Outp ut voltage sense inp ut. Error amp lifier outp ut. Connect comp ensation network to GN D. The comp ensation cap acitor serves as soft star t cap acitor. By p ulling this p in low will disable the outp ut. Connect this p in to the switching node between the MOSFETs. 5 www.semtech.com SC2608 POWER MANAGEMENT Theory of Operation Synchr onous Buck Con Synchronous Convv er ertter The output voltage of the synchronous converter is set and controlled by the output of the error amplifier. The inverting input of the error amplifier receives its voltage from the SENSE pin. The non-inverting input of the error amplifier is connected to an internal 0.8V reference. The error amplifier output is connected to the compensation pin. The error amplifier generates a current proportional to (Vsense - 0.8V), which is the COMP pin output current (Transconductance ~ 7mS). The voltage on the COMP pin is the integral of the error amplifier current. The COMP voltage is the non-inverting input of the PWM comparator and controls the duty cycle of the MOSFET drivers. The compensation network controls the stability and transient response of the regulator. The larger the capacitor, the slower the COMP voltage changes, and the slower the duty cycle changes. The non-inverting input voltage of the PWM comparator is the triangular ramp signal generated from the oscillator. The peak-to-peak voltage of the ramp is 1V, this is a parameter used in control loop calculation. When the oscillator ramp signal rises above the COMP voltage, the comparator output goes high and the PWM latch is reset. This pulls DH low, turning off the high-side MOSFET. After a short delay (dead time), DL is pulled high, turning on the low-side MOSFET. The oscillator also produces a set pulse for the PWM latch to turn off the low-side MOSFET, After a delay time, DH is pulled high to turn on the high-side MOSFET. The delay time is determined by a monostable on the chip. The triangle wave minimum is about 0.8V, and the maximum is about 1.8V. Thus, if Vcomp = 0.7V, high side duty cycle is the minimum (~0%) , but if Vcomp is 1.8V, duty cycle is at maximum ( ~90%).The internal oscillator uses an onchip capacitor and trimmed precision current sources to set the oscillation frequency to 200kHz. Figure 1 shows a 2.5V output converter. If the Vout <2.5V, then the SENSE voltage < 0.8V. In this case the error amplifier will be sourcing current into the COMP pin so that COMP voltage and duty cycle will gradually increase.If Vout > 2.5V, the error amplifier will sink current and reduce the COMP voltage, so that duty cycle will decrease.The circuit will be in steady state when Vout =2.5V , Vsense = 0.8V, Icomp = 0. The COMP voltage and duty cycle depend on Vin. remain in the off state whenever the supply voltage drops below the set threshold. Lockout occurs if VCC falls below 4.3V typ. Sof Softt Star Startt The SC2608 provides a soft start function to prevent large inrush currents upon power-up or hiccup retry. If both COMP and SENSE pins are low (<300mV), the device enters soft start mode, and the compensation capacitor is slowly charged by an internal 1.5uA current source. When the COMP pin reaches 300mV, the low side FET is switched on in order to refresh the bootstrap capacitor, and begin PWM from a known state. As the COMP pin rises above 800mV, PWM begins at minimum duty cycle. COMP continues to charge, slowly sweeping the device through the duty cycle range until FB reaches the regulation point of 800mV. Once FB reaches the regulation point, the soft start current is switched off, and the strong error amp is enabled, providing a glitch-free entrance into closed loop operation. The overcurrent comparator is still active during soft start mode, and will override soft start in the event that an overcurrent is detected, such as startup into a dead short. R DS(ON) Current Limiting In case of a short circuit or overload, the low-side (LS) FET will conduct large currents. To protect the regulator in this situation, the controller will shut down the regulator and begin a soft start cycle later. While the LS driver is on,the Phase voltage is compared to the OCP trip voltage. If the phase voltage is lower than OCP trip voltage, an over current condition is detected. The low-side Rdson sense is implemented at end of each LS-FET turn-on duration. The minimum turn-on time of the LS-FET is set to be 400nS. This will ensure the sampled signal is noise free by giving enough time for the switching noise to die down. OCP Hiccup In the event that an overcurrent is detected, the SC2608 latches the fault and begins a hiccup cycle. Switching is immediately stopped, and the drivers are set to a tristate condition (Both DH and DL are low). COMP is slowly discharged to 300mV with an internal 1.5uA current source, providing a long cooldown time to keep power dissipation low in the event of a continuous dead short. Once COMP and SENSE both fall below the 300mV threshold, the part U nder V oltage Lock out Voltage Lockout re-enables the 1.5uA soft start current , and the device begins The under voltage lockout circuit of the SC2608 assures a normal startup cycle again. that both high-side and low-side MOSFET driver outputs © 2005 Semtech Corp. 6 www.semtech.com SC2608 POWER MANAGEMENT Applications Information (Cont.) G pwm = A note to the user is needed: The device cannot restart until both COMP and SENSE are low, to prevent start up into a charged output. In the event of an overcurrent condition, the output is quickly discharged by the load, therefore bringing SENSE below the 300mV threshold. If the COMP pin is pulled low by an external device (such as an open-drain logic gate used for system shutdown), and SENSE is high(above 300mV) is high while COMP is low, then the SC2608 turns on the low side FET to discharge the output before changing to shutdown or soft-start mode. The low side FET turns off when SENSE drops below 300mV and the converter remains in the tristate condition until COMP is released. Although this shutdown technique can be used successfully on the SC2608, the system designer using COMP for external shutdown will need to consider the load on the low side FET when discharging the output capacitor bank. For large capacitor bank, this peak current can be quite large as it is limited only by the RDS(ON) of the low side FET. Fortunately the duration of this event is quite short, and has been shown in the lab to have no detrimental effect on the performance of the external FETs. Disabling the output by pulling down COMP/SS pin is only recommended when the output capacitor bank is not too large. VBG G_PWM L R Rc 0.8V Ci VIN C Co V 1 + sRcCo T (s ) = Gm • G pwm • Vin • bg • H c (s ) • R L Vo 1 + s RcCo + + s 2 LCo 1 + c R o Ro H c (s ) = 1 sC + sC i The task here is to properly choose the compensation network for a nicely shaped loop-gain Bode plot. The following design procedures are recommended to accomplish the goal: (1) Calculate the corner frequency of the output filter: Fo = 2π 1 LC o (2) Calculate the ESR zero frequency of the output filter capacitor: Fesr = 1 2π R c C o (3) Check that the ESR zero frequency is not too high. F esr < F SW 5 If this condition is not met, the compensation structure may not provide loop stability. The solution is to add some electrolytic capacitors to the output capacitor bank to correct the output filter corner frequency and the ESR zero frequency. In some cases, the filter inductance may also need to be adjusted to shift the filter corner frequency. It is not recommended to use only high frequency multi-layer ceramic capacitors for output filter. (4) Choose the loop gain cross over frequency (0 dB frequency). It is recommended that the crossover frequency is always less than one fifth of the switching frequency : 1 FX _ OVER = • FSW 5 If the transient specification is not stringent, it is better to choose a crossover frequency that is less than one tenth of the switching frequency for good noise immunity. The resistor in the compensation network can then be calculated as: R1 Ro R2 The control model of SC2608 is depicted in Fig. 4. This model can also be used to generate loop gain Bode plots. The bandgap reference is 0.8V and trimmed to +/-1% accuracy. The desired output voltage can be achieved by setting the resistive divider network, R1 and R2. The error amplifier is transconductance type with fixed gain of: 2 0 . 007 A V The compensation network includes a resistor and a capacitor in series, which terminates the output of the error amplifier to the ground. The PWM gain is inversion of the ramp amplitude, and this gain is given by: © 2005 Semtech Corp. 1 1 R+ Fig. 4. SC2608 small signal model. Gm = Vramp where the ramp amplitude is fixed at 1 volts. The total control loop-gain can then be derived as follows: Compensation Network Design E/A 1 when V F F 1 R= • esr • X _ OVER • o Gpwm •Vin • Gm Fo Fesr Vbg F o < F esr < 7 F sw 5 www.semtech.com SC2608 POWER MANAGEMENT Applications Information (Cont.) An example is given below to demonstrate the procedure introduced above. (5) The compensation capacitor is determined by choosing the compensator zero to be about one fifth of the output filter corner frequency: F zero C= Co=4400uF Rc=0.009Ω Vbg=0.8V Vramp=1V Gm=0.007A/V Vin=12V Vo=2.5V Io=15A Fsw=200KHz L=2.2uH F = o 5 1 2πR • Fzero SC2608 soft start time is determined by the compensation capacitor. Capacitance can be adjusted to satisfy the soft start requirement. set (6) The final step is to generate the Bode plot by using the simulation model in Fig. 4 or using the equations provided here with Mathcad. The phase margin can then be checked using the Bode plot. Ci=1nF Rc=1.33KΩ set to Rc=1.5KΩ C=327.95nF set to C=100nF for suitable soft start time Loop Gain Mag (dB) 100 50 mag( i) 0 50 10 100 1 .10 3 4 Fi 1 .10 1 .10 5 1 .10 5 1 .10 6 Loop Gain Phase (Degree) 0 45 phase ( i) 90 135 180 10 100 1 .10 3 4 Fi 1 .10 1 .10 6 Fig. 5. Bode plot of the loop © 2005 Semtech Corp. 8 www.semtech.com SC2608 POWER MANAGEMENT Typical Performance Characteristics Frequency vs. Temperature 0.83 210 0.82 200 Frequency(KHz) Vref(V) Vref vs. Temperature 0.81 0.80 0.79 190 180 170 -50 -25 0 25 50 75 100 125 -50 -25 0 25 180 4.40 170 4.20 150 4.10 0 25 50 75 100 -50 125 -25 0 25 50 75 100 125 Icc vs. Temperature Gate driver dead time vs. Temperature 100 4.0 90 3.7 Icc(mA) Gate driver dead time(ns) 125 Temperarure(℃) Temperature(℃) 80 70 3.4 3.1 60 2.8 -50 -25 0 25 50 75 100 125 -50 -25 0 Temperature(℃) 25 50 75 100 125 Temperature(℃) Soft start sourcing vs. Temperature UVLO_Hysteresis vs. Temperature 1.65 200 UVLO_Hysteresis(mV) Soft start souring current(uA) 100 4.30 160 -25 75 UVLO vs. Temperature 4.50 UVLO(V) I_limit trip(mV) I_limit vs. Temperature 190 -50 50 Temperature(℃) Temperature(℃) 1.55 1.45 1.35 1.25 150 100 50 0 -50 -25 0 25 50 75 100 125 -50 Temperature(℃ ) © 2005 Semtech Corp. -25 0 25 50 75 100 125 Temperature(℃ ) 9 www.semtech.com SC2608 POWER MANAGEMENT Application Information TTypical ypical Application Schematic C1 C2 C3 1 5 00 u F /1 6 V 1 5 00 u F /1 6 V IP B 09N 03LA Q1 4 .7 u F /1 6 V +12V/+5V/+3.3V C13 1uF/16V DL 3 4 SC2608 L1 1.2uH R4 1R C12 2.2nF C7 C8 C9 C10 C11 4.7uF /6.3V VCC Q2 4.7uF /6.3V R5 1R SENSE GND C5 1uF/16V 4.7uF /6.3V 5 +12V COMP/SS DH 2 2200uF /6.3V 6 BST 1.6VOUT/20A 2200uF /6.3V R2 1.5k C6 100n Phase 1 IP D 06N 03LA 8 7 Sense R1 2R2 U1 C4 1n R3 1K Sense R6 1K VOUT = 0.8V X (R3+R6)/R6 Bill of Materials Item Qu an ti ty Referen ce Par t Ven d er 1 1 C1 4.7u F/16V A ny 2 2 C2,C3 1500u F/16V Pan ason i c FJ 3 1 C4 1n F/50V A ny 4 2 C5,C13 1u F/16V A ny 5 1 C6 100n F/25V A ny 6 2 C7,C8 2200u F/6.3V Pan ason i c FJ 7 3 C9,C10,C11 4.7u F/6.3V A ny 8 1 C12 2.2n F A ny 9 1 L1 1.2u H A ny 10 1 Q1 IPD09N 03LA In fi n eon 11 1 Q2 IPD06N 03LA In fi n eon 12 1 R1 2R2 A ny 13 1 R2 1.5K A ny 14 2 R3,R6 1K, 1% A ny 15 2 R4,R5 1R0 A ny 16 1 U1 SC2608 SEMTECH © 2005 Semtech Corp. 10 www.semtech.com SC2608 POWER MANAGEMENT Typical Performance Characteristics Start up Effic ie nc y V.S . Loa d C urre nt 92 Vin 90 Efficiency (%) 88 Comp/ ss 86 84 DL 82 80 VOUT 78 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Loa d C urre nt (A) Over Current Protection (33A DC tripped) Transient Response VIN COMP/SS VOUT Comp/ss DH IL (10A/10mV) VOUT 0 -18 A step load OCP HICCUP Gate waveforms VIN DH Comp/SS Phase node DH DL VOUT 15 A sustain loading © 2005 Semtech Corp. 11 www.semtech.com SC2608 POWER MANAGEMENT Application Information TTypical ypical DDR VDDQ Application Schematic D2 D1N4148 C15 1uF/16V 4 SC2608 C8 C9 C10 C11 R4 2R2 C14 1n C12 C13 4.7uF /6.3V 3 L1 1.2uH/40A 1.8VOUT/24A 4.7uF /6.3V DL Q2 4.7uF /6.3V VCC C6 1uF/16V 1800uF /6.3V D1 BAT54H SENSE GND 2 1500uF /6.3V 5 COMP/SS DH 1800uF /6.3V 6 BST 1 1500uF /6.3V 5VDual Sense Phase C4 1800uF /6.3V R2 5.1k 7 C3 IP D 06N 03LA C7 220nF U1 8 C2 1500uF /6.3V R1 2.2R C5 330pF C1 IP D 06N 03 LA Q1 4.7uF /16V 5VDual R3 1.27k Sense R5 1k +12V Bill of Materials Item Qu an ti ty Referen ce Par t Ven d er 1 4 C1,C11,C12,C13 4.7u F/6.3V A ny 2 3 C2,C3,C4 1500u F/6.3V Pan ason i c FJ 3 1 C5 330p F/50V A ny 4 2 C6,C15 1u F/16V A ny 5 1 C7 220n F/25V A ny 6 3 C8,C9,C10 1800u F/6.3V Pan ason i c FJ 7 1 C14 1n F/50V A ny 8 1 D1 B AT54H A ny 9 1 D2 1N 4148 A ny 10 1 L1 1.2u H/40A A ny 11 1 Q1 IPD06N 03LA In fi n eon 12 1 Q2 IPD06N 03LA In fi n eon 13 2 R1,R4 2R2 A ny 14 1 R2 5.1K A ny 15 1 R3 1.27K, 1% A ny 16 1 R5 1K, 1% A ny 17 1 U1 SC2608 SEMTECH © 2005 Semtech Corp. 12 www.semtech.com SC2608 POWER MANAGEMENT Application Information TTypical ypical High In put V oltage Application Schematic Input Voltage 20VIN R6 1KR/1206 1KR/1206 R7 5 D1 8.2V SENSE GND VCC C11 1uF/16V DL 2 3 4 C10 2.2nF SC2608 4.7uF/25V L1 5VOUT/8A 2.2uH Q2 R4 2R2 C9 1n C6 C7 C8 4.7uF/6.3V Vin 6 COMP/SS DH C4 1uF/16V 4.7uF/6.3V Sense C5 100n BST C2 2200uF/6.3V 1K Phase 1 IPD13N03LA 8 7 R3 R2 5R1 U1 C3 10pF/Opt. C1 1000uF/25V R1 0R IPD13N03LA Q1 R5 5.25K Sense R7 1k Bill of Materials Item Q ua nti ty Refer ence Pa r t Vender 1 1 C1 4.7uF/25V A ny 2 1 C2 1000uF/25V Pa na soni c FJ 3 1 C3 10pF/50V , O pt. A ny 4 2 C 4,C 11 1uF/16V A ny 5 1 C5 100nF/16V A ny 6 1 C6 2200uF/6.3V Pa na soni c FJ 7 2 C 7,C 8 4.7uF/6.3V A ny 8 1 C9 1nF/50V A ny 9 1 C 10 2.2nF/50V A ny 10 1 D1 Zener 8.2V A ny 11 1 L1 2.2uH/15A A ny 12 1 Q1 IPD13N03LA Infi neon 13 1 Q2 IPD13N03LA Infi neon 14 1 R1 0R A ny 15 1 R2 5.1R A ny 16 2 R3,R7 1 .K , 1 % A ny 17 1 R4 2R2 A ny 18 1 R5 5.25K , 1% A ny 19 2 R6,R7 1K R, 1206 A ny 20 1 U1 SC 2608 SEMTEC H © 2005 Semtech Corp. 13 www.semtech.com SC2608 POWER MANAGEMENT Outline Drawing - SO-8 A D e N D IM E1 1 E 2 ccc C 2 X N /2 T IP S .0 6 9 .0 1 0 .0 6 5 .0 2 0 .0 1 0 .1 9 7 .1 9 3 .1 5 7 .1 5 4 .2 3 6 B S C .0 5 0 B S C .0 1 0 .0 2 0 .0 4 1 .0 2 8 .0 1 6 (.0 4 1 ) 8 8 0 .0 0 4 .0 1 0 .0 0 8 .0 5 3 .0 0 4 .0 4 9 .0 1 2 .0 0 7 .1 8 9 .1 5 0 A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc 2 X E /2 e /2 B D D IM E N S IO N S M IL L IM E T E R S IN C H E S M IN N O M M A X M IN N O M M A X aaa C A2 S E A T IN G PLANE C h A A1 bxN bbb 1 .7 5 0 .2 5 1 .6 5 0 .5 1 0 .2 5 5 .0 0 4 .9 0 4 .0 0 3 .9 0 6 .0 0 B S C 1 .2 7 B S C 0 .2 5 0 .5 0 0 .4 0 1 .0 4 0 .7 2 (1 .0 4 ) 8 0 8 0 .1 0 0 .2 5 0 .2 0 1 .3 5 0 .1 0 1 .2 5 0 .3 1 0 .1 7 4 .8 0 3 .8 0 h H C A -B D c GAGE P LA N E 0 .2 5 S E E D E T A IL A S ID E V IE W L (L 1 ) D E T A IL 01 A NO TES: 1. C O N T R O L L IN G D IM E N S IO N S A R E IN M IL L IM E T E R S (A N G L E S IN D E G R E E S ). 2. DATUM S 3. D IM E N S IO N S "E 1 " A N D "D " D O N O T IN C L U D E M O L D F L A S H , P R O T R U S IO N S OR GATE BURRS. © 2005 Semtech Corp. -A - AND -B - T O B E D E T E R M IN E D A T D A T U M P L A N E -H - 14 www.semtech.com SC2608 POWER MANAGEMENT Land Pattern - SO-8 X DIM (C) G Z Y C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2005 Semtech Corp. 15 www.semtech.com