STMICROELECTRONICS BUL1102EFP

BUL1102EFP
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
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DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
1
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P tot
Visol
T stg
Tj
Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p <5 ms)
Base Current
Base Peak Current (t p <5 ms)
Total Dissipation at T c = 25 o C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
1100
450
12
4
8
2
4
30
1500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
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BUL1102EFP
THERMAL DATA
R thj-case
Thermal Resistance Junction-Case
Max
o
4.17
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1100 V
I EBO
Emitter Cut-off Current
(I B = 0)
V EB = 12 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
Collector-Emitter
Saturation Voltage
IC = 2 A
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 2 A
I B = 400 mA
DC Current Gain
I C = 250 mA
IC = 2 A
V CE = 5 V
V CE = 5 V
RESISTIVE LOAD
Storage Time
Fall Time
I C = 2.5 A
I B1 = 0.5 A
T P = 30 µs
V CC = 250 V
I B2 = 1 A
(see figure 2)
Rpetitive Avalanche
Energy
L = 2 mH
I BR ≤ 2.5A
(see figure 1)
ts
tf
E ar
I B = 400 mA
C = 1.8 nF
25 o C < T C <125 o C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
2/6
Typ.
Max.
Unit
100
µA
1
mA
450
V CE(sat) ∗
h FE ∗
Min.
Derating Curve
40
12
V
1.5
V
1.5
V
70
23
2.5
300
6
µs
ns
mJ
BUL1102EFP
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Resistive Load
Switching Time Inductive Load
3/6
BUL1102EFP
Reverse Biased SOA
Figure 1: Energy Rating Test Circuit
Figure 2: Resistive Load Switching Test Circuit
4/6
BUL1102EFP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
5/6
BUL1102EFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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