BUL1102EFP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION. 3 ■ DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature September 2003 Value 1100 450 12 4 8 2 4 30 1500 -65 to 150 150 Unit V V V A A A A W o o C C 1/6 BUL1102EFP THERMAL DATA R thj-case Thermal Resistance Junction-Case Max o 4.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1100 V I EBO Emitter Cut-off Current (I B = 0) V EB = 12 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA Collector-Emitter Saturation Voltage IC = 2 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A I B = 400 mA DC Current Gain I C = 250 mA IC = 2 A V CE = 5 V V CE = 5 V RESISTIVE LOAD Storage Time Fall Time I C = 2.5 A I B1 = 0.5 A T P = 30 µs V CC = 250 V I B2 = 1 A (see figure 2) Rpetitive Avalanche Energy L = 2 mH I BR ≤ 2.5A (see figure 1) ts tf E ar I B = 400 mA C = 1.8 nF 25 o C < T C <125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Typ. Max. Unit 100 µA 1 mA 450 V CE(sat) ∗ h FE ∗ Min. Derating Curve 40 12 V 1.5 V 1.5 V 70 23 2.5 300 6 µs ns mJ BUL1102EFP DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Resistive Load Switching Time Inductive Load 3/6 BUL1102EFP Reverse Biased SOA Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/6 BUL1102EFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 5/6 BUL1102EFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6