STMICROELECTRONICS BUL1101E

BUL1101E
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
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HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
LARGE RBSOA
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
Collector Current
Collector Peak Current (t p <5 ms)
Base Current
I BM
Base Peak Current (t p <5 ms)
P tot
o
Total Dissipation at Tc = 25 C
T stg
Storage Temperature
Tj
April 2003
Max. Operating Junction Temperature
Value
Unit
1100
V
450
V
V (BR)EBO
V
3
A
6
A
1.5
A
3
A
70
W
-65 to 150
o
C
150
o
C
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BUL1101E
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-ambient
Max
Max
o
1.78
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CES
V (BR)EBO
Parameter
Test Conditions
Collector Cut-off
Current (V BE = 0)
V CE = 1100 V
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 1 mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
IC = 1 A
I B = 200 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 1 A
I B = 200 mA
DC Current Gain
I C = 250 mA
IC = 2 A
V CE = 5 V
V CE = 5 V
RESISTIVE LOAD
Storage Time
Fall Time
I C = 2.5 A
V BB(off) = -5 V
I B1 = - I B2 = 0.5 A
(see figure 1)
V CC = 125 V
t P = 300 µs
Repetitive Avalanche
Energy
L = 2 mH
I BR ≤ 2.5A
C = 1.8 nF
(see figure 2)
E ar
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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Max.
Unit
100
µA
24
V
450
Collector-Emitter
Saturation Voltage
ts
tf
Typ.
12
V CE(sat) ∗
h FE ∗
Min.
V
0.25
20
6
6
1
V
1.5
V
38
10
60
15
400
2
700
µs
ns
mJ
BUL1101E
Safe Operating Area
Derating Curve
Output Characteristics
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
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BUL1101E
DC Current Gain
Reverse Biased Safe Operating Area
4/7
Resistive Load Switching Times
BUL1101E
Figure 1: Resistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
Figure 2: Energy Rating Test Circuit
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BUL1101E
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
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BUL1101E
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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