BULD116D
®
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
3
2
1
APPLICATIONS:
■ COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
IPAK
TO-251
("Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
400
V
V CEO
Collector-Emitter Voltage (I B = 0)
200
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
5
A
10
A
A
IC
I CM
Collector Peak Current (t p < 5 ms)
Base Current
2
I BM
Base Peak Current (t p < 5 ms)
4
A
P tot
Total Dissipation at T c = 25 o C
20
W
T stg
Storage Temperature
IB
Tj
Max. Operating Junction Temperature
September 2003
-65 to 150
o
C
150
o
C
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BULD116D
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
6.25
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 400 V
V CE = 400 V
V EBO
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
L = 25 mH
V CE = 200 V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 5 A
I B = 0.1 A
IB = 1 A
DC Current Gain
I C = 10 mA
IC = 5 A
V CE = 5 V
V CE = 5 V
h FE ∗
=
=
=
=
0.5 A
1A
3A
5A
IB
IB
IB
IB
=
=
=
=
RESISTIVE LOAD
Rise Time
Fall Time
Storage Time
V CC = 125 V
I B1 = 0.4 A
t p = 30 µs
IC = 2 A
I B2 = -0.4 A
(see figure 2)
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE = -5 V
V clamp = 180 V
I B1 = 0.4 A
L = 500 µH
(see figure 1)
VF
Diode Forward Voltage I C = 2 A
Unit
100
500
µA
µA
V
200
V
10
8
250
µA
0.25
0.4
0.7
1.2
V
V
V
V
1.1
1.5
V
V
20
0.2
0.2
1.4
0.4
Derating Curve
µs
µs
µs
µs
µs
0.5
0.10
1.5
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
Max.
9
50 mA
0.1 A
0.6 A
1A
tr
tf
ts
Safe Operating Area
Typ.
T j = 125 o C
Collector-Emitter
Leakage Current
I CEO
Min.
V
BULD116D
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching Time Resistive Load
Switching Time Inductive Load
3/6
BULD116D
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
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BULD116D
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
B5
B6
C
0.033
0.30
0.012
0.95
0.45
0.60
0.037
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
L2
V1
0.80
10
o
1.00
0.047
0.031
10
0.039
o
P032N_E
5/6
BULD116D
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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