STMICROELECTRONICS BUL128D-B

BUL128D-B
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALES
TYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
APPLICATIONS
n
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
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FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
Figure 1: Package
3
TO-220
1
2
Figure 2: Internal Schematic Diagram
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Table 1: Order Codes
Part Number
Marking
Package
Packaging
BUL128D-B
BUL128D-B
TO-220
Tube
Table 2: Absolute Maximum Ratings
Symbol
VCES
Parameter
VCEO
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
VEBO
Emitter-Base Voltage
IC
ICM
IB
IBM
Value
Unit
700
V
400
V
V(BR)EBO
V
(IC= 0, IB = 2 A, tp < 10 µs, TJ = 150 oC)
Collector Current
4
A
Collector Peak Current (tp < 5ms)
8
A
Base Current
2
A
Base Peak Current (tp < 5ms)
4
A
February 2005
Rev. 2
1/8
BUL128D-B
Symbol
Parameter
Value
Unit
70
W
o
Ptot
Total Dissipation at TC = 25 C
Tstg
Storage Temperature
TJ
Max. Operating Junction Temperature
-65 to 150
°C
150
°C
Table 3: Thermal Data
Rthj-case
Thermal Resistance Junction-Case
Max
1.78
o
C/W
Rthj-amb
Thermal Resistance Junction-Ambient
Max
62.5
o
C/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
ICES
Parameter
Min.
Typ.
Collector Cut-off Current VCE = 700 V
(VBE = 0 V)
ICEO
Test Conditions
VCE =700 V
Tj = 125
oC
Collector Cut-off Current VCE = 400 V
Max.
Unit
100
µA
500
µA
250
µA
18
V
(IB = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
IE = 10 mA
9
(IC = 0 )
VCEO(sus)* Collector-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
IC = 0.5 A
IB = 0.1 A
IC = 1 A
400
V
(IB = 0 )
VCE(sat)*
VBE(sat)*
Collector-Emitter
Saturation Voltage
0.7
V
IB = 0.2 A
1
V
IC = 2.5 A
IB = 0.5 A
1.5
V
IC = 4 A
IB = 1 A
1.1
V
IB = 0.2 A
1.2
V
IC = 2.5 A
IB = 0.5 A
1.3
V
IC = 10 mA
VCE = 5 V
10
IC = 2 A
VCE = 5 V
12
RESISTIVE LOAD
VCC =200 V
IC = 2 A
ts
Storage Time
IB1 = 0.4 A
VBE(off) = -5 V
tf
Fall Time
DC Current Gain
RBB = 0 W
2/8
L = 200 µH
INDUCTIVE LOAD
(see figure 15)
VCC =250 V
IC = 2 A
ts
Storage Time
IB1 = 0.4 A
IB2 = -0.4 A
tf
Fall Time
Tp = 30 µs
(see figure 14)
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
.
V
IB = 0.1 A
hFE*
Base-Emitter Saturation IC = 0.5 A
Voltage
IC = 1 A
0.5
32
0.6
µs
0.1
µs
2
2.9
0.2
µs
µs
BUL128D-B
Figure 3: Safe Operating Area
Figure 6: Derating Current
Figure 4: DC Current Gain
Figure 7: DC Current Gain
Figure 5: Collector-Emitter Saturation Voltage
Figure 8: Base-Emitter Saturation Voltage
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BUL128D-B
Figure 9: Inductive Load Fall Time
Figure 12: Inductive Load Stoarage Time
Figure 10: Resistive Load Fall Time
Figure 13: Resistive Load Stoarage Time
Figure 11: Reverse Biased Operating Area
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BUL128D-B
Figure 14: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Table 15: Restistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
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BUL128D-B
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
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TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
BUL128D-B
Table 5:
Version
Release Date
01-Oct-2002
15-Feb-2005
1
1
Change Designator
First Release.
Added table 1 on page 1.
7/8
BUL128D-B
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