STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED Figure 1: Package APPLICATIONS n COMPACT FLUORESCENT LAMPS (CFLS) DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV series is designed for use in Compact Fluorescent Lamps. TO-92 Figure 2: Internal Schematic Diagram Table 1: Order Codes Part Number Marking Package Packaging STBV32 STBV32-AP BV32 BV32 TO-92 TO-92 Bulk Ammopack Table 2: Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage (VBE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0, IB = 0.5 A, tp < 10 ms) IC ICM Collector Current Value Unit 700 V 400 V V(BR)EBO V 1.5 A 3 A o (f ≥ 100 Hz, duty-cycle ≤ 50 %, TC = 25 C) Collector Peak Current (tp < 5ms) Base Current 0.5 A IBM Base Peak Current (tp < 5ms) 1.5 A Ptot Total Dissipation at TC = 25 oC 1.5 W IB April 2005 Rev. 2 1/9 STBV32 Symbol Parameter Tstg Storage Temperature TJ Max. Operating Junction Temperature Value Unit -65 to 150 °C 150 °C Table 3: Thermal Data Rthj-case Thermal Resistance Junction-case Max 83.3 oC/W Rthj-amb Thermal Resistance Junction-Ambient Max 112 o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICEV V(BR)EBO Parameter Test Conditions Min. Typ. Collector Cut-off Current VCE = 700 V (VBE = -1.5 V) VCE = 700 V Emitter-Base Breakdown Voltage IE = 10 mA 9 IC = 10 mA 400 o Tj =125 C Max. Unit 1 mA 5 mA 18 V (IC = 0 ) VCEO(sus)* Collector-Emitter Sustaining Voltage V (IB = 0 ) VCE(sat)* VBE(sat)* hFE Collector-Emitter Saturation Voltage IC = 0.5 A IB = 100 mA 0.5 V IC = 1 A IB = 250 mA 1 V IC = 1.5 A IB = 500 mA 1.5 V Base-Emitter Saturation IC = 0.5 A Voltage IC = 1 A IB = 100 mA 1.0 V IB = 250 mA 1.2 V DC Current Gain IC = 0.5 A VCE = 2 V 8 35 IC = 1 A VCE = 2 V 5 25 RESISTIVE LOAD IC = 1 A VCC = 125 V tr Rise Time IB1 = -IB2 = 200 mA tp = 25 µs ts Storage Time tf Fall Time ts (see figure 12) INDUCTIVE LOAD IC = 1 A Vclamp = 300 V Storage Time IB1 = 200 mA VBE(off) = -5V L = 50 mH RBB = 0 (see figure 13) * Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %. 2/9 0.8 1 µs 4 µs 0.7 µs µs STBV32 Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: Output Characteristics Figure 7: Collector-Emitter Saturation Voltage Figure 5: Base-Emitter Saturation Voltage Figure 8: DC Current Gain 3/9 STBV32 Figure 9: DC Current Gain Figure 10: Reverse Biased Operating Area 4/9 Figure 11: Inductive Load Switching Times STBV32 Figure 12: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Table 13: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/9 STBV32 TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 2.41 S1 0.92 1.52 W 0.41 0.56 V 5O 0102782 C 6/9 STBV32 TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 mm. TYP 12.70 6.35 2.54 18.00 6.00 9.00 18.50 15.50 16.00 3.80 4.00 3.00 -1.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 7/9 STBV32 Figure 1: Revision History 8/9 Version Release Date 01-Dec-2002 27-Apr-2005 1 1 Change Designator First Release. Total dissipation value has been modified. STBV32 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9