STMICROELECTRONICS BUL310PI

BUL310
BUL310PI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125oC
LARGE RBSOA
U.L. RECOGNISED ISOWATT220 PACKAGE
(U.L. FILE # E81734 (N)):
ISOLATION VOLTAGE 1500VRMS
1
2
3
3
1
TO-220
2
ISOWATT220
APPLICATIONS
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ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL310 and BUL310PI are manufactured
using high voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capability. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BUL 310
Uni t
BUL310PI
V CES
Collector-Emitter Voltage (V BE = 0)
1000
V
V CEO
Collector-Emitter Voltage (I B = 0)
500
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
5
V
IC
I CM
IB
Collector Current
Collector Peak Current (tp <5 ms)
Base Current
I BM
Base Peak Current (tp <5 ms)
P t ot
Total Dissipation at T c = 25 o C
T stg
Storage Temperature
Tj
Max. O perating Junction Temperature
September 1997
10
A
3
A
4
75
A
35
W
-65 to 150
o
C
150
o
C
1/7
BUL310/PI
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
T O-220
ISOW ATT 220
1.65
62.5
3.58
62.5
Max
Max
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
100
500
µA
µA
250
µA
Collector Cut-off
Current (V BE = 0)
V CE = 1000 V
V CE = 1000 V
Collector Cut-off
Current (IB = 0)
V EC = 400 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
0.5
0.7
1.1
V
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
1
1.1
1.2
V
V
V
DC Current G ain
I C = 10 mA
IC = 3 A
1.9
160
µs
ns
I CEO
V CEO(sus)
V EBO
hFE∗
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 2 A
V BE(of f) = -5 V
V CL = 250 V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 2 A
V BE(of f) = -5V
V CL = 250 V
o
T j = 125 C
o
Tj = 125 C
L= 25 mH
V CE = 5 V
V CE = 2.5 V
IB1 = 0.4 A
R BB = 0 Ω
L = 200 µH
IB1 = 0.4 A
R BB = 0 Ω
L = 200 µH
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
2/7
Derating Curve
500
V
9
V
10
10
1.2
80
1.8
150
µs
ns
BUL310/PI
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/7
BUL310/PI
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/7
BUL310/PI
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
1.27
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/7
BUL310/PI
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
6/7
L4
P011G
BUL310/PI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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