ETC BULD138

BULD138
HIGH VOLTAGE FAST SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
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SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125oC
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
3
1
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APPLICATIONS
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ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BULD138 is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
2
IPAK
(TO-251)
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
VC ES
Collector-Emitter Voltage (V BE = 0)
800
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (IC = 0)
9
V
Collector Current
5
A
I CM
IB
Collector Peak Current (t p < 5 ms)
Base Current
8
2
A
A
IB M
Base Peak Current (tp < 5 ms)
4
A
IC
Parameter
o
P tot
Total Dissipation at Tc = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
January 1995
30
W
-65 to 150
o
C
150
o
C
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BULD138
THERMAL DATA
R thj-cas e
Rthj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
4.16
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CE S
Collector Cut-off
Current (V BE = 0)
V CE = 800 V
V CE = 800 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 400 V
V CEO(sus) Collector-Emitter
Sustaining Voltage
V EBO
Min.
Typ.
T j = 125 o C
I C = 100 mA
L = 25 mH
Max.
Unit
100
500
µA
µA
250
µA
400
V
9
V
Emitter-Base Voltage
I E = 10 mA
V CE (sat)∗
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
0.5
0.7
1
V
V
V
VB E(sat)∗
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
1.1
1.3
1.5
V
V
V
DC Current Gain
IC = 2 A
I C = 10 mA
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE (off) = -5 V
V CL = 250 V
1.4
100
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE (off) = -5V
V CL = 250 V
T j = 125 o C
h FE ∗
VC E = 5 V
V CE = 5 V
IB1 = 0.4 A
RBB = 0 Ω
L = 200 µH
IB1 = 0.4 A
R BB = 0 Ω
L = 200 µH
∗ Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 %
Safe Operating Areas
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Derating Curves
8
10
0.7
50
1
75
µs
ns
BULD138
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/6
BULD138
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
BULD138
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
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BULD138
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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