BUL26D BULK26D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 1 APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 2 1 2 3 ■ DESCRIPTION The BUL26D and BULK26D are manufactured using medium voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUL26D Unit BULK26D VC ES Collector-Emitter Voltage (V BE = 0) 600 V V CEO Collector-Emitter Voltage (I B = 0) 300 V V EBO Emitter-Base Voltage (IC = 0) 12 V Collector Current 4 A Collector Peak Current (t p < 5 ms) 8 A IB Base Current 2 A IC I CM IB M Base Peak Current (tp < 5 ms) P tot Total Dissipation at Tc = 25 o C T stg Storage Temperature Range Tj Max. Operating Junction Temperature December 1994 4 60 A 50 W -65 to 150 o C 150 o C 1/7 BUL26D THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max TO220 SOT-82 2.08 62.5 2.5 62.5 o o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Max. Unit I CE S Collector Cut-off Current (V BE = 0) Parameter V CE = 600 V 200 µA I CEO Collector Cut-off Current (I B = 0) V CE = 300 V 250 µA V CEO(sus) Collector-Emitter Sustaining Voltage Test Conditions Min. I C = 100 mA 300 12 Typ. V Emitter-Base Voltage I E = 10 mA V CE (sat)∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 0.5 0.7 1 V V V VB E(sat)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 1.1 1.2 1.3 V V V DC Current Gain I C = 10 mA IC = 1 A V CE = 5 V V CE = 3 V V EBO h FE ∗ 10 15 45 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 3 A V BE (off) = -5 V V CL = 250 V I B1 = 0.6 A RBB = 0 Ω L = 200 µH 0.8 70 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 3 A V BE (off) = -5 V V CL = 250 V T j = 125 o C I B1 = 0.6 A RBB = 0 Ω L = 200 µH 1.2 100 Vf Diode Forward Voltage I C = 2.5 A Safe Operating Areas 1.3 130 Derating Curves µs ns µs ns 3 ∗ Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 % 2/7 V V BUL26D DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/7 BUL26D Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/7 BUL26D TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/7 BUL26D SOT-82 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 11.3 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 H 2.54 0.100 C D H B F A c1 b e b1 e3 6/7 P032A BUL26D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7