BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE ORDERING CODES : BULK128D-A AND BULK128D-B NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 1 2 3 SOT-82 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 4 A Collector Peak Current (tp < 5 ms) 8 A IC I CM Parameter Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P t ot Total Dissipation at T c = 25 o C 55 IB T stg Tj St orage Temperature Max. Operating Junction Temperature December 1997 W -65 to 150 o C 150 o C 1/7 BULK128D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 2.27 80 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 100 500 µA µA 250 µA I CES Collector Cut-off Current (V BE = -1.5 V) V CE = 700 V V CE = 700 V I CEO Collector-Emitter Leakage Current (I B = 0) V CE = 400 V V EBO Emitter-Base Voltage I E = 10 mA V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA L = 25 mH V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A I C = 2.5 A IB = 0.1 A IB = 0.2 A IB = 0.5 A 0.7 1.0 1.5 V V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 0.5 A IC = 1 A I C = 2.5 A IB = 0.1 A IB = 0.2 A IB = 0.5 A 1.1 1.2 1.3 V V V DC Current G ain I C = 10 mA IC = 2 A V CE = 5 V VCE = 5 V Forward Voltage Drop If = 2 A 2.5 V V CC = 250 V I B1 = 0.4 A T p = 30 µs (see fig. 2) IC = 2 A I B2 = -0.4 A 2.5 2.9 tf RESISTIVE LO AD Storage Time BULK128D-A BULK128D-B Fall T ime 0.2 µs µs µs ts tf INDUCTIVE LOAD Storage Time F all Time V Cl = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig. 1) IC = 2 A V BE(off ) = -5 V L = 200 µH 0.6 0.1 µs µs h FE∗ Vf ts Tj = 125 o C V 400 V 10 8 1.7 2.0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note: Ordering codes: - BULK128D-A - BULK128D-B. Please contact your nearest ST Microelectronics sales office for delivery details. 2/7 9 BULK128D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULK128D Inductive Fall Time Inductive Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULK128D Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULK128D SOT-82 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.444 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.0 1.3 0.039 0.05 D 15.4 16 0.606 0.629 e e3 2.2 0.087 4.15 4.65 F 0.163 0.183 3.8 0.150 H 2.54 H2 0.100 2.15 0.084 C B F A D H H2 c1 b e b1 e3 6/7 P032A BULK128D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 7/7