STMICROELECTRONICS BULT118D

BULT118D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
■
NPN TRANSISTOR
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
700
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
2
A
Collector Peak Current (tp < 5 ms)
4
A
IC
I CM
Parameter
Base Current
1
A
I BM
Base Peak Current (t p < 5 ms)
2
A
P t ot
Total Dissipation at T c = 25 o C
45
IB
T stg
Tj
June 1997
St orage Temperature
Max. Operating Junction Temperature
W
-65 to 150
o
C
150
o
C
1/7
BULT118D
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
2.77
80
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
I CES
Collector Cut-off
Current (V BE = 0)
V EBO
Emitter-Base Voltage
I E = 10 mA
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Collector-Emitter
Leakage Current
V CE = 400 V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IC = 1 A
IC = 2 A
V BE(s at)∗
Base-Emitter
Saturation Voltage
DC Current G ain
V CEO(sus)
I CEO
h FE∗
V CE = 700 V
V CE = 700 V
Typ .
Tj = 125 o C
L = 25 mH
Max.
Un it
100
500
µA
µA
9
V
400
V
250
µA
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
0.5
1
1.5
V
V
V
I C = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
1.0
1.2
1.3
V
V
V
I C = 10 mA
I C = 0.5 A
IC = 2 A
V CE = 5 V
VCE = 5 V
VCE = 5 V
tr
ts
tf
RESISTIVE LO AD
Rise Time
Storage Time
Fall T ime
V CC = 125 V
I B1 = 0.2 A
IC = 1 A
IB2 = -0.2 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 1 A
V BE = -5 V
V c la mp = 300 V
IB1 = 0.2 A
L = 50 mH
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
Min.
10
10
8
50
0.4
3.2
0.25
0.8
0.16
0.7
4.5
0.4
µs
µs
µs
µs
µs
BULT118D
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BULT118D
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BULT118D
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BULT118D
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
e3
2.2
4.15
F
G
4.65
0.163
3.8
3
0.183
0.150
3.2
H
H2
0.087
0.118
0.126
2.54
0.100
2.15
0.084
H2
0016114
6/7
BULT118D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. ..
7/7