BULT118D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ NPN TRANSISTOR INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 2 A Collector Peak Current (tp < 5 ms) 4 A IC I CM Parameter Base Current 1 A I BM Base Peak Current (t p < 5 ms) 2 A P t ot Total Dissipation at T c = 25 o C 45 IB T stg Tj June 1997 St orage Temperature Max. Operating Junction Temperature W -65 to 150 o C 150 o C 1/7 BULT118D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 2.77 80 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = 0) V EBO Emitter-Base Voltage I E = 10 mA Collector-Emitter Sustaining Voltage I C = 100 mA Collector-Emitter Leakage Current V CE = 400 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A IC = 2 A V BE(s at)∗ Base-Emitter Saturation Voltage DC Current G ain V CEO(sus) I CEO h FE∗ V CE = 700 V V CE = 700 V Typ . Tj = 125 o C L = 25 mH Max. Un it 100 500 µA µA 9 V 400 V 250 µA IB = 0.1 A IB = 0.2 A IB = 0.4 A 0.5 1 1.5 V V V I C = 0.5 A IC = 1 A IC = 2 A IB = 0.1 A IB = 0.2 A IB = 0.4 A 1.0 1.2 1.3 V V V I C = 10 mA I C = 0.5 A IC = 2 A V CE = 5 V VCE = 5 V VCE = 5 V tr ts tf RESISTIVE LO AD Rise Time Storage Time Fall T ime V CC = 125 V I B1 = 0.2 A IC = 1 A IB2 = -0.2 A ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 1 A V BE = -5 V V c la mp = 300 V IB1 = 0.2 A L = 50 mH ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 Min. 10 10 8 50 0.4 3.2 0.25 0.8 0.16 0.7 4.5 0.4 µs µs µs µs µs BULT118D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULT118D Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULT118D Figure 1: Inductive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuits. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULT118D SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 6/7 BULT118D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7