BUL128FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 3 1 DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 4 A Collector Peak Current (tp < 5 ms) 8 A IC I CM Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P t ot Total Dissipation at T c = 25 C T stg St orage Temperature IB Tj April 1998 o Max. Operating Junction Temperature 31 W -65 to 150 o C 150 o C 1/7 BUL128FP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 4.1 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = -1.5 V) V EBO Emitter-Base Voltage I E = 10 mA Collector-Emitter Sustaining Voltage I C = 100 mA Collector Cut-Off Current (IB = 0) V CE = 400 V Collector-Emitter Saturation Voltage IC IC IC IC V CEO(sus) I CEO V CE(sat )∗ V BE(s at)∗ h FE∗ V CE = 700 V V CE = 700 V 0.5 A 1 A 2.5 A 4 A Typ . Tj = 125 o C L = 25 mH IB IB IB IB = = = = V DC Current G ain I C = 10 mA IC = 1 A IC = 2 A V CE = 5 V VCE = 5 V VCE = 5 V 10 15 14 1.9 IC = 2 A IB2 = -0.4 A ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 2 A V BEoff = -5 V V c la mp = 200 V (see fig.1) IB1 = 0.4 A R BB = 0 Ω 250 µA 0.7 1 1.5 V V V V 1.1 1.2 1.3 V V V 0.5 IB = 0.1 A IB = 0.2 A IB = 0.5 A V CC = 125 V I B1 = 0.4 A T p = 30 µs (see fig.2) µA µA V I C = 0.5 A IC = 1 A I C = 2.5 A RESISTIVE LO AD Storage Time Fall T ime Un it 100 500 9 0.1 A 0.2 A 0.5 A 1 A ts tf Max. 400 Base-Emitter Saturation Voltage ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 = = = = Min. 45 40 0.2 2.9 0.4 µs µs 0.6 0.1 1 0.2 µs µs BUL128FP Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL128FP Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BUL128FP Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL128FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 6/7 L4 BUL128FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7