BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 1 IPAK (TO-251) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 2 A Collector Peak Current (tp < 5 ms) 4 A IC I CM Parameter Base Current 1 A I BM Base Peak Current (t p < 5 ms) 2 A P t ot Total Dissipation at T c = 25 o C 20 IB T stg Tj June 1998 St orage Temperature Max. Operating Junction Temperature W -65 to 150 o C 150 o C 1/7 BULD118D-1 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 6.25 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = 0) V EBO Emitter-Base Voltage I E = 10 mA Collector-Emitter Sustaining Voltage I C = 100 mA Collector-Emitter Leakage Current V CE = 400 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.5 A IC = 1 A IC = 2 A V BE(s at)∗ Base-Emitter Saturation Voltage DC Current G ain V CEO(sus) I CEO h FE∗ tr tf ts RESISTIVE LO AD Rise Time Fall T ime Storage Time group A group B V CE = 700 V V CE = 700 V Min. Typ . Tj = 125 o C L = 25 mH Max. Un it 100 500 µA µA 9 V 400 V 250 µA IB = 0.1 A IB = 0.2 A IB = 0.4 A 0.5 1 1.5 V V V I C = 0.5 A IC = 1 A IC = 2 A IB = 0.1 A IB = 0.2 A IB = 0.4 A 1.0 1.2 1.3 V V V I C = 10 mA I C = 0.5 A IC = 2 A V CE = 5 V VCE = 5 V VCE = 5 V VCC = 125 V I B1 = 0.4 A t p = 30 µs IC = 2 A IB2 = -0.2 A 10 10 8 50 0.7 0.3 1.4 2 ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 1 A V BE = -5 V V c la mp = 300 V VF Diode Forward Voltage IC = 1 A IB1 = 0.2 A L = 50 mH 0.5 µs µs 2.1 2.75 µs µs µs µs 0.8 0.10 2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note : Product is pre-selected in storage time (GROUP A and GROUP B). SGS-THOMSON reserves the right to ship either groups according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details. 2/7 BULD118D-1 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BULD118D-1 Inductive Fall Time Inductive Storage Time Resistive Fall Time Resistive Load Storage Time Reverse Biased SOA 4/7 BULD118D-1 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BULD118D-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 6/7 BULD118D-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 7/7