STMICROELECTRONICS DMV1500HDFD6

DMV1500HD
®
DAMPER + MODULATION DIODE FOR CRT TV
Table 1: Main Product Characteristics
DAMPER
MODUL.
IF(AV)
6A
3A
IFpeak (max)
12 A
12 A
VRRM
1500 V
600 V
trr (typ)
150 ns
60 ns
VF (typ)
1.0 V
1.0 V
VFP (typ)
21 V
5V
DAMPER
1
Full kit in one package
■
High breakdown voltage capability
■
Very fast recovery diode
■
Specified turn on switching characteristics
■
Low static and peak forward voltage drop for
low dissipation
■
Insulated version:
Insulated voltage = 2000 VRMS
Capacitance = 7 pF
■
Planar technology allowing high quality and
best electrical characteristics
■
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
3
2
3
TO-220FPAB
DMV1500HDFD
3
1
2
TO-220FPAB FD6 Bending
DMV1500HDFD6
(optional)
Table 2: Order Codes
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220FPAB package includes
both the DAMPER diode and the MODULATION
diode, thanks to a dedicated design.
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performances.
March 2005
2
1
FEATURES AND BENEFITS
■
MODULATION
REV. 1
Part Number
Marking
DMV1500HDFD
DMV1500HD
DMV1500HDFD6
DMV1500HD
1/8
DMV1500HD
Table 3: Absolute Maximum Ratings
Symbol
Value
Parameter
Unit
Damper
Modul.
1500
600
V
VRRM
Repetitive peak reverse voltage
IFpeak
Peak working forward current
F = 56kHz
12
12
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
75
50
A
Tstg
Storage temperature range
Tj
-40 to +150
°C
150
°C
Maximum operating junction temperature
Table 4: Thermal Resistance
Symbol
Rth(j-c)
Parameter
Junction to case thermal resistance
Value
Unit
3.8
°C/W
Table 5: Static Electrical Characteristics
Value
Symbol
Parameter
Test conditions
Tj = 25°C
Typ.
IR *
VF **
Pulse test:
Reverse leakage current
Forward voltage drop
Tj = 125°C
Max.
Typ.
Max.
Damper
VR = 1500 V
100
100
1000
Modul.
VR = 600 V
3
3
30
Damper
IF = 6 A
1.1
1.6
1
1.35
Modul.
IF = 6 A
1.15
1.4
1
1.25
Unit
µA
V
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations:
2
DAMPER: P = 1.05 x IF(AV) + 0.05 x IF (RMS)
2
MODULATION: P = 0.89 x IF(AV) + 0.055 x IF (RMS)
Table 6: Recovery Characteristics
Value
Symbol
Parameter
Test conditions
Damper
Typ.
trr
2/8
Reverse recovery time
IF = 100mA
IR =100mA
Irr = 10mA
Tj = 25°C
IF = 1A
dIF/dt = -50 A/µs Tj = 25°C
VR =30V
Max.
1000
Modul.
Typ.
Max.
250
400
Unit
ns
150
250
60
85
DMV1500HD
Table 7: Turn-On Switching Characteristics
Symbol
Parameter
tfr
Typ.
Max.
330
470
Damper
IF = 6 A
dIF/dt = 80 A/µs
VFR = 3 V
Tj = 100°C
Modul.
IF = 6 A
dIF/dt = 80 A/µs
VFR = 2 V
Tj = 100°C
85
125
Damper
IF = 6 A
dIF/dt = 80 A/µs
Tj = 100°C
21
29
Modul.
IF = 6 A
dIF/dt = 80 A/µs
Tj = 100°C
Forward recovery time
VFP
Value
Test conditions
Peak forward voltage
Figure 1: Power dissipation versus peak
forward current (triangular waveform, δ=0.45)
Unit
ns
V
5
7.5
Figure 2: Average forward current versus
ambient temperature
PF(AV)(W)
IF(AV)(A)
7
4.5
Rth(j-a)=Rth(j-c)
4.0
DAMPER diode
6
3.5
5
3.0
MODULATION diode
2.5
4
DAMPER diode
2.0
3
1.5
2
MODULATION diode
T
1.0
1
0.5
δ=tp/T
IP(A)
Tamb(°C)
tp
0
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
Figure 3: Forward voltage drop versus forward
current (damper diode)
0
25
50
75
100
125
150
Figure 4: Forward voltage drop versus forward
current (modulation diode)
IFM(A)
IFM(A)
15
10
14
9
13
Tj=125°C
(maximum values)
12
8
11
Tj=125°C
(maximum values)
7
10
9
6
Tj=125°C
(typical values)
8
Tj=125°C
(typical values)
5
7
Tj=25°C
(maximum values)
6
4
5
Tj=25°C
(maximum values)
3
4
2
3
2
1
VFM(V)
1
VFM(V)
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
3/8
DMV1500HD
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 6: Reverse recovery charges versus
dIF/dt (damper diode, typical values)
Zth(j-c)/Rth(j-c)
Qrr(µC)
1.0
4.0
0.9
IF=IP
Tj=125°C
3.5
0.8
3.0
0.7
2.5
0.6
DAMPER diode
MODULATION diode
0.5
2.0
0.4
1.5
0.3
1.0
0.2
0.5
0.1
tp(s)
dIF/dt(A/µs)
Single pulse
0.0
0.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.1
1.E+02
Figure 7: Reverse recovery charges versus
dIF/dt (modulation diode, typical values)
1.0
10.0
100.0
Figure 8: Peak reverse recovery current versus
dIF/dt (damper diode, typical values)
Qrr(nC)
IRM(A)
300
5.0
4.5
IF=IP
Tj=125°C
250
IF=IP
Tj=125°C
4.0
3.5
200
3.0
150
2.5
2.0
100
1.5
1.0
50
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
0
0.1
1.0
10.0
0.1
100.0
Figure 9: Peak reverse recovery current versus
dIF/dt (modulation diode, typical values)
1.0
10.0
Figure 10: Transient peak forward voltage
versus dIF/dt (damper diode, typical values)
IRM(A)
VFP(V)
4.0
40
IF=IP
Tj=125°C
3.5
IF=IP
Tj=100°C
35
3.0
30
2.5
25
2.0
20
1.5
15
1.0
10
5
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0.0
0.1
4/8
1.0
10.0
100.0
0
20
40
60
80
100
120
140
160
180
200
DMV1500HD
Figure 11: Transient peak forward voltage
versus dIF/dt (modulation diode, typical
values)
Figure 12: Forward recovery time versus dIF/dt
(damper diode, typical values)
tfr(ns)
VFP(V)
600
10
9
IF=IP
VFR=3.0V
Tj=100°C
550
IF=IP
Tj=100°C
500
8
450
7
400
6
350
5
300
4
250
200
3
150
2
100
1
50
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
Figure 13: Forward recovery time versus dIF/dt
(modulation diode, typical values)
0
20
40
60
80
100
120
140
160
180
200
Figure 14: Relative variation of dynamic
parameters versus junction temperature
IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C]
tfr(ns)
1.2
140
IF=IP
VFR=2.0V
Tj=100°C
120
1.0
100
0.8
80
VFP
0.6
60
IRM
0.4
40
QRR
0.2
20
Tj(°C)
dIF/dt(A/µs)
0
0.0
0
20
40
60
80
100
120
140
160
180
200
25
50
75
100
125
Figure 15: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
DAMPER diode
10
MODULATION diode
VR(V)
1
1
10
100
1000
5/8
DMV1500HD
Figure 17: TO-220FPAB FD6 Option Package Mechanical Data
REF.
A
B
D
E
F
G
G1
H
L2
L3
L4
L5
L6
L7
M1
M2
R
Dia.
Figure 18: TO-220FPAB FD6 PCB layout
(typical, in millimeters)
2.54
7.5
2.2
7.9
1.0
6/8
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.9
0.173
0.192
2.5
2.9
0.098
0.114
2.45
2.75
0.096
0.108
0.4
0.7
0.016
0.028
0.6
1
0.024
0.039
4.8
5.3
0.195
0.205
2.2
2.95
0.094
0.106
10
10.7
0.394
0.421
12.7
12.8
0.500
0.504
4.8 Typ.
0.189 Typ.
3.4
4.8
0.150
0.165
2.9 Typ.
0.114 Typ.
2.8
3.2
0.110
0.126
9
9.9
0.354
0.390
3.75 Typ.
0.148 Typ.
7
8
0.276
0.315
1 Typ.
0.039 Typ.
2.9
3.5
0.114
0.138
DMV1500HD
Figure 19: TO-220FPAB Package Mechanical Data
REF.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.9
0.173
0.192
2.5
2.9
0.098
0.114
2.45
2.75
0.096
0.108
0.4
0.7
0.016
0.027
0.6
1
0.024
0.039
1.15
1.7
0.045
0.067
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.205
2.4
2.7
0.094
0.106
10
10.7
0.393
0.421
16 Typ.
0.630 Typ.
28.6
30.6
1.126
1.205
9.8
10.7
0.385
0.421
15.8
16.4
0.622
0.646
9
9.9
0.354
0.390
2.9
3.5
0.114
0.138
Table 8: Ordering Information
Part Number
Marking
Package
Weight
Base qty
DMV1500HDFD
DMV1500HDFD6
DMV1500HD
DMV1500HD
TO-220FPAB
TO-220FPAB F6
2.4 g
2.4 g
50
45
Delivery
mode
Tube
Tube
Table 9: Revision History
Date
Revision
16-Mar-2005
1
Description of Changes
First issue
7/8
DMV1500HD
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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